Synthesis and Characterization of High Pure Diamaond Single Crystal

高纯金刚石单晶的合成与表征

• 批准号: 04453067
• 负责人: FUKUNAGA Osamu
• 金额: $ 4.16万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04453067/
• 关键词: Diamond; Single crystal; High pressure solvent method; Alloy solvents; Detection of liquidus temperature by DTA; Impurities in diamond; Calculation of impurity state in diamond; ダイヤモンド単結晶; 超高圧合成法; フラックス結晶成長; Fe-Ni系溶媒; Fe-Co系溶媒; 超高圧合成; 溶媒; 温度

This project was performed to establish basic scope of the synthwsis of high pure diamond single crystal. High pressure solvent growth method of single crystal diamond, which only possible method at present, was studied from basic view points. We examined various pressure-temperature region of diamond formation of the carbon alloy systems and found that some alloys such as Ni-Ti and Fe-B showed the region which no spontaneous nucleation of diamond was observed. The finding of these region canpropose better P-T condition to perform crystal growth only selectively on the surface of seed crystal.We developed piston cylinder type and cubic anvil type high pressure apparatus to establish DTA method to detect liquidus temperature under pressure for various carbon and solvent alloy system. Thirdly, we Thirdly, we examined Ni-Ti sovent as a typical system, because Ti has two opposed function namely agent to prevent nitrogen contamination to the diamond lattice and possible souce to supply TiC and TiN into diamond bulk as an inclusion. It was found that high purity diamond crystal can be grown in the solvent of an optimum amount of Ti.Impurities of light elements inthe diamond lattice could be detected by SIMS and possibly AES and these measurements can also corelate with molecular orbital energy calculation done for the case of Ni impurity.

本课题的研究目的是建立高纯金刚石单晶的基本范围。从基本观点出发，研究了目前唯一可行的金刚石单晶高压溶剂法生长方法。我们考察了碳合金体系中金刚石形成的不同压力-温度区域，发现Ni-Ti和Fe-B等合金在此区域内没有金刚石自发成核。这些区域的发现可以为只在籽晶表面选择性地进行晶体生长提供更好的P-T条件。我们研制了活塞圆柱式和六面顶砧式高压装置，建立了差热分析法测定各种碳和溶剂合金体系在压力下的液相线温度。第三，我们将Ni-Ti溶剂作为一个典型的体系进行了研究，因为Ti具有两个相反的功能，即防止氮对金刚石晶格的污染的试剂和将TiC和TiN作为包裹体供应到金刚石块体中的可能来源。结果表明，在含有最佳Ti含量的溶剂中可以生长出高纯金刚石晶体，金刚石晶格中的轻元素杂质可以用西姆斯和AES检测，这些测量结果还可以与Ni杂质的分子轨道能量计算相关联。

项目成果

S.Nakano and O.Fukunaga: "New Concept of the Synthesis of Cubic Boron Nitride" Metals and Materials Materials and Precesses. 3. 269-272 (1992)

S.Nakano 和 O.Fukunaga：“合成立方氮化硼的新概念”金属与材料材料和工艺。

S.Nakano, H.Ikawa and O.Fukunaga: "Synthesis of cubic boron nitrude using Li_3BN_2, Sr_3B_3N_4 and Ca_3B_2N_4 as solvent- catalysts" Diamond and related Materials. 3. 75-82 (1993)

S.Nakano、H.Ikawa 和 O.Fukunaga：“使用 Li_3BN_2、Sr_3B_3N_4 和 Ca_3B_2N_4 作为溶剂催化剂合成立方氮化硼”金刚石和相关材料。

J.Y.Choi: "Effect of B_2O_3 and hBN crystallinity on cBN Synthesis" J.Am.Ceram.Soc.76. 2523-2528 (1993)

J.Y.Choi：“B_2O_3 和 hBN 结晶度对 cBN 合成的影响”J.Am.Ceram.Soc.76。

N,Ohashi, O.Fukunaga, J.Tanaka, J.Isoya and S.Tanaka: "Electronic State of Ni ion in Diamond Caluculated by a DV-Xalpha Method" Phys. Rev. B. (to be submitted). (1994)

N,Ohashi、O.Fukunaga、J.Tanaka、J.Isoya 和 S.Tanaka：“通过 DV-Xalpha 方法计算的金刚石中 Ni 离子的电子态” Phys。

S.Nakano: "High Pressure Synthesis of Cubic Boron Nitride" Proceeding of 14th AIRAPT Conf.1993. (in press). (1993)

S.Nakano：“立方氮化硼的高压合成”第 14 届 AIRAPT Conf.1993 会议记录。