Layered structures of Metal Sulphides

金属硫化物的层状结构

• 批准号: 400335214
• 负责人: Professor Dr. Alexander Föhlisch
• 金额: --
• 依托单位: Department of Materials Science and Engineering
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2018
• 资助国家: 德国
• 起止时间: 2017-12-31 至 2022-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/400335214?language=en
• 关键词: Layered; structures; Metal; Sulphides

Sputter deposition is a commonly used process and the possibility of using it in conjunction with 2D materials would constitute an enormous advantage for the industrial scale production in Europe. This has, however, not been accomplished yet. The reason for this is the energetic particle bombardment associated with conventional sputtering which may easily break the weak bonds in these types of sensitive materials. The conventional sputtering process promotes energetic particle flux onto the growing film which is normally beneficial for the film quality but may be very detrimental to a fragile layered material. There is however a number of processing condition that can be modified to significantly reduce the energetic bombardment. By using Monte-Carlo based software that is capable of simulating the sputtering process together with experimental feedback, the aim is to develop a sputtering process that is compatible with the layered structures.In this project, we propose to develop a sputter-deposition method for deposition onto sensitive layered structures as well as for the actual deposition of high quality layered sulphide structures, such as WS2, MoS2, SnS2 and combinations thereof. Such materials combinations constitute novel layered materials structures and it is of major importance that such structures are developed in EU since large scale synthesis of 2D materials have been identified as a key factor for commercial uptake. Mixed 2D materials also offer “materials on demand”, i.e. that the final material properties may be tailored from the combination of constituents. The deposited films will further be characterised by using optical microscopy, atomic force microscopy (AFM), scanning tunnelling microscopy (STM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction, Raman and photoluminescence spectroscopies, X-ray photoelectron spectroscopy (XPS) and hard X-ray photoelectron spectroscopy. Such characterisation is important for understanding the fundamental physics of the layered structures and hetero structures. Further, deposition and analysis of the proposed 2D materials is necessary to assess their potential in novel electronics and optoelectronics.The specific purposes and aims of the proposed project are as follows• Studying and characterising the influence of the energetic particle bombardment associated with sputter deposition onto the proposed 2D-materials.• Developing a sputter deposition process that enables deposition onto the proposed 2D-materials without deteriorating their quality.• Developing a sputter deposition process that enables deposition of high quality layered sulphide films, such as WS2, MoS2, SnS2, and novel combinations thereof• Characterising the sputtered 2D-materials films and evaluating them from a fundamental standpoint, e.g. correlation of the structural aspects (crystal structure and defects) with the fundamental electronic properties.

溅射沉积是一种常用的工艺，将其与2D材料一起使用的可能性将对欧洲的工业规模生产构成巨大的优势。然而，这还没有实现。其原因是与传统溅射有关的高能粒子轰击很容易打破这些类型的敏感材料中的弱键。传统的溅射工艺将高能粒子通量促进到生长的薄膜上，这通常对薄膜质量是有利的，但对脆弱的层状材料可能非常不利。然而，有许多处理条件可以被修改以显著减少能量轰击。利用蒙特卡罗模拟溅射过程的软件，结合实验反馈，目的是开发一种与层状结构兼容的溅射过程。在本项目中，我们提出了一种溅射沉积方法，用于在敏感的层状结构上沉积以及实际沉积高质量的层状硫化物结构，如WS2、MoS2、SnS2及其组合。这种材料组合构成了新的层状材料结构，由于2D材料的大规模合成已被确定为商业应用的关键因素，因此在欧盟开发这种结构具有重要意义。混合2D材料还提供“随需应变材料”，即最终的材料属性可以根据成分的组合进行定制。用光学显微镜、原子力显微镜(AFM)、扫描隧道显微镜(STM)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X射线衍射、拉曼光谱和光致发光光谱、X射线光电子能谱(XPS)和硬X射线光电子能谱对沉积的薄膜进行了表征。这种表征对于理解层状结构和异质结构的基本物理很重要。此外，有必要对所建议的2D材料进行沉积和分析，以评估其在新型电子学和光电子学中的潜力。建议项目的具体目的和目标如下：·研究和表征与溅射沉积相关的高能粒子轰击对所建议的2D材料的影响。·开发溅射沉积工艺，使其能够沉积到所建议的2D材料上，而不会降低其质量。·开发溅射沉积工艺，从而能够沉积高质量的层状硫化物薄膜，例如WS2、MoS2、SnS2及其新颖的组合·表征溅射的2D材料薄膜，并从基本的角度对其进行评估，例如，结构方面(晶体结构和缺陷)与基本电子性质的关联。