Layered structures of Metal Sulphides
Layered structures of Metal Sulphides
批准号:
400335214
负责人:
Professor Dr. Alexander Föhlisch
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Grants
财政年份:
2018
资助国家:
德国
项目状态:
已结题
起止时间:
2017-12-31 至 2022-12-31
中文摘要
溅射沉积是一种常用的工艺,将其与二维材料结合使用的可能性将为欧洲的工业规模生产带来巨大的优势。然而,这一点尚未实现。其原因是高能粒子轰击与传统溅射相关,这可能很容易破坏这些类型的敏感材料中的弱键。传统的溅射工艺促进高能粒子流到生长的薄膜上,这通常有利于薄膜质量,但可能对脆弱的层状材料非常有害。然而,有一些处理条件可以被修改以显著减少高能轰击。利用基于蒙特卡罗的软件模拟溅射过程,并结合实验反馈,开发与层状结构相兼容的溅射工艺。在本项目中,我们提出了一种溅射沉积方法,既可以沉积到敏感的层状结构上,也可以实际沉积高质量的层状硫化物结构,如WS2、MoS2、SnS2及其组合。这种材料组合构成了新型的层状材料结构,在欧盟开发这种结构具有重要意义,因为大规模合成二维材料已被确定为商业采用的关键因素。混合二维材料也提供了“按需材料”,即最终的材料特性可以根据成分的组合来定制。将进一步使用光学显微镜、原子力显微镜(AFM)、扫描隧道显微镜(STM)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、x射线衍射、拉曼光谱和光致发光光谱、x射线光电子能谱(XPS)和硬x射线光电子能谱对沉积的薄膜进行表征。这种表征对于理解层状结构和异质结构的基本物理性质是重要的。此外,所提出的二维材料的沉积和分析对于评估其在新型电子学和光电子学中的潜力是必要的。拟议项目的具体目的和目标如下•研究和描述与溅射沉积相关的高能粒子轰击对拟议2d材料的影响。•开发一种溅射沉积工艺,可以在不降低其质量的情况下沉积在拟议的2d材料上。•开发一种溅射沉积工艺,能够沉积高质量的层状硫化物薄膜,如WS2, MoS2, SnS2,以及它们的新组合•表征溅射2d材料薄膜,并从基本角度评估它们,例如结构方面(晶体结构和缺陷)与基本电子特性的相关性。
英文摘要
Sputter deposition is a commonly used process and the possibility of using it in conjunction with 2D materials would constitute an enormous advantage for the industrial scale production in Europe. This has, however, not been accomplished yet. The reason for this is the energetic particle bombardment associated with conventional sputtering which may easily break the weak bonds in these types of sensitive materials. The conventional sputtering process promotes energetic particle flux onto the growing film which is normally beneficial for the film quality but may be very detrimental to a fragile layered material. There is however a number of processing condition that can be modified to significantly reduce the energetic bombardment. By using Monte-Carlo based software that is capable of simulating the sputtering process together with experimental feedback, the aim is to develop a sputtering process that is compatible with the layered structures.In this project, we propose to develop a sputter-deposition method for deposition onto sensitive layered structures as well as for the actual deposition of high quality layered sulphide structures, such as WS2, MoS2, SnS2 and combinations thereof. Such materials combinations constitute novel layered materials structures and it is of major importance that such structures are developed in EU since large scale synthesis of 2D materials have been identified as a key factor for commercial uptake. Mixed 2D materials also offer “materials on demand”, i.e. that the final material properties may be tailored from the combination of constituents. The deposited films will further be characterised by using optical microscopy, atomic force microscopy (AFM), scanning tunnelling microscopy (STM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction, Raman and photoluminescence spectroscopies, X-ray photoelectron spectroscopy (XPS) and hard X-ray photoelectron spectroscopy. Such characterisation is important for understanding the fundamental physics of the layered structures and hetero structures. Further, deposition and analysis of the proposed 2D materials is necessary to assess their potential in novel electronics and optoelectronics.The specific purposes and aims of the proposed project are as follows• Studying and characterising the influence of the energetic particle bombardment associated with sputter deposition onto the proposed 2D-materials.• Developing a sputter deposition process that enables deposition onto the proposed 2D-materials without deteriorating their quality.• Developing a sputter deposition process that enables deposition of high quality layered sulphide films, such as WS2, MoS2, SnS2, and novel combinations thereof• Characterising the sputtered 2D-materials films and evaluating them from a fundamental standpoint, e.g. correlation of the structural aspects (crystal structure and defects) with the fundamental electronic properties.
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Oberflächenbindung und Adsorptionskinetik an Siliziumoberflächen und Grenzflächen
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批准号:5377789
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2002
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负责人:Professor Dr. Alexander Föhlisch
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依托单位:
国内基金
海外基金
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批准号:60672101
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项目类别:面上项目
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资助金额:26.0万元
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批准年份:2006
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负责人:郭兴旺
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依托单位:
新型嘧啶并三环化合物的合成研究
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批准号:20572032
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项目类别:面上项目
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资助金额:25.0万元
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批准年份:2005
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负责人:柏旭
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依托单位:
磁层重联区相干结构动力学过程的观测研究
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批准号:40574067
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项目类别:面上项目
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资助金额:36.0万元
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批准年份:2005
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负责人:蔡春林
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依托单位: