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Deveiopment of Room Temperature Deposition Process of Silicon Nitride Film by Low Frequency Plasma CVD.

低频等离子体CVD 氮化硅薄膜室温沉积工艺的发展。

基本信息

批准号：
61850049
负责人：
SHIMOZUMA Mitsuo
金额：
$ 2.75万
依托单位：
College of Medical Technology, Hokkaido University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research
财政年份：
1986
资助国家：
日本
起止时间：
1986 至 1987
项目状态：
已结题

项目摘要

Silicon nitride films are being used extensively in the semiconductor technology for interlayer insulation and device surface passivation. Stoichiome-tric silicon nitrode Si_3n_4 can be deposited by thermal deposition at about 900 ゜C, and nearly stoichimetric silicon nitride films have been deposited by the high frequency plasma CVD method at low substrate temperature (200-300゜c). The purpose of the present study is to deposite of silicon nitride films at room temperature using low frequency(50Hz) plasma CVD with silane and nitrogen mixtures. The results obtained may be summarized as below.1) Silicon nitride films have been deposited by low frequency(50Hz) plasma CVD using a nitsogen and silane mixture at room temperature. To deposit high quality silicon nitride, the silane fraction in the nitrogen and silane mixture has to be less than 5%.2) The refractive index, breakdown field strenght and resistivity of the obtained silicon nitride film were 2.0, 1.2 x 1 0^1 V/cm and 6 x 1 0^<15> cm, respectively.3) The distribution of film thickness on 5 inches Si wafer was 1000 <plus-minus> 30 <Ang>. 4) Fixed charge density and surface state density of Al/SiNx/SiO_2 /Si(MNOS) were about 1.5 x 1 0^<11> cm^<-2> and 8 x 10^<10> cm^<-2> ev^<-1> , respectively. substrate temperature dependence of the film properties were observed, and as high the temperature(<200゜c) is, the films become Si tich. However electrical properties were not changed.5) The emission.intensity from silicon and nitrogen neutral and ionized molecule in nitrogen and silane mixture plasma with low frequency(50Hz) is large compared with that from RF(13.56MHz) plasma.6) Since low frequency plasma can generate high electron energy plasma, which is required for good silicon nitride formation, high quality silicon nitride films can be grown without any assistance from heating of the substrate.

氮化硅薄膜在半导体技术中被广泛用于层间绝缘和器件表面钝化。在900 ℃左右热淀积可以淀积出化学计量比的氮化硅Si_3n_4，在较低的衬底温度（200-300 ℃）下用高频等离子体CVD法淀积出了接近化学计量比的氮化硅薄膜。本研究的目的是在室温下使用低频（50 Hz）等离子体CVD沉积氮化硅薄膜与硅烷和氮气的混合物。所得结果可概括如下：1）在室温下，使用氮源和硅烷的混合物，通过低频（50 Hz）等离子体CVD沉积氮化硅膜。为了存款高质量的氮化硅，氮气和硅烷混合物中的硅烷分数必须小于5%。2）所获得的氮化硅膜的折射率、击穿场强和电阻率分别为2.0、1.2 × 10 ^1V/cm和6 × 10 ^<15>cm<plus-minus><Ang>。4)Al/SiNx/SiO_2 /Si（MNOS）的固定电荷密度和表面态密度分别约为1.5 × 10 ~（-6）<11>cm ~（-1<-2>）和8 × 10 ~（-6）<10>cm ~（-1）<-2>ev ~<-1>（-1）。观察到薄膜性能随衬底温度的变化，温度越高（<200 ℃），薄膜越容易变成Si薄膜。5）在低频（50 Hz）的氮气和硅烷混合等离子体中，硅和氮的中性分子和电离分子的发射强度比射频等离子体中的大（13.56MHz）等离子体。6）由于低频等离子体可以产生高电子能量等离子体，这是良好的氮化硅形成所需要的，高质量的氮化硅膜可以在没有来自衬底加热的任何帮助的情况下生长。