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Low Temperature Deposition of TiN Diffusion Barrier Metal for Integrated Circuit by Low Frequency Plasma CVD

低频等离子体CVD低温沉积集成电路用TiN扩散势垒金属

基本信息

批准号：
10650298
负责人：
SHIMOZUMA Mitsuo
金额：
$ 2.05万
依托单位：
HOKKAIDO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650298/
关键词：
TiN plasma CVD thin film deposition low frequency plasma low frequency plasnra CVD diffusion barrier material thin film low temperature deposition integrated circuit material 薄膜低温形成

项目摘要

Titanium nitride (TiN) films have been used in the fabrication of integrated circuits as a diffusion barrier layer metal. Usually, TiN films are produced by deposition with thermal chemical vapor deposition (CVD), plasma CVD and physical vapor deposition or plasma spraying methods. However, these methods require high-temperature (>600℃) substrates to achieve the depositions, which sometimes causes thermal damage to the deposited films. At temperatures above 550℃, thermal diffusion of materials not suitable for semiconductor devices may also occur. Therefore, it is desirable to develop a deposition technique for TiN films using low-temperature (<550℃) substrates to avoid thermal damage. In our previous work, TiN films have been deposited on silicon substrates at low substrate temperature (TィイD2subィエD2) (400℃-550℃) by 50Hz plasma CVD using a TiClィイD24ィエD2+NィイD22ィエD2+HィイD22ィエD2 gas mixture. A substrate bias circuit with two diodes was used to enhance the deposition through ion processes. The Vickers hardness values of the deposited TiN films at TィイD2subィエD2 ranging from 450 to 550℃ were above 2200Hv, and resistively was below 100 μ Ωcm TィイD2subィエD2>500℃. The composition of the deposited films was investigated by the RBS method to determine that the at.% value of the Cl content in the TiN films is about 1% at TィイD2subィエD2=550℃ . XRD spetra revealed that the film has the preferred orientation ofδ -TiN with (200) and (220) under the deposition condition of TィイD2subィエD2>500℃. From these results, it was found that high quality and uniform TiN film was obtained on three-dimensional substrate surface by the 50Hz plasma CVD with a bias circuit using two diodes.

氮化钛（TiN）薄膜作为扩散阻挡层金属已广泛应用于集成电路的制造中。通常采用热化学气相沉积（CVD）、等离子体气相沉积（CVD）和物理气相沉积或等离子喷涂方法制备TiN薄膜。然而，这些方法需要高温（>600℃）衬底来实现沉积，这有时会对沉积的薄膜造成热损伤。在550℃以上的温度下，不适合半导体器件的材料也可能发生热扩散。因此，有必要开发一种低温（<550℃）衬底的TiN薄膜沉积技术，以避免热损伤。在我们以前的工作、锡电影已经沉积在硅基板在低衬底温度(TィイD2subィエD2) -550℃(400℃)50 hz等离子体CVD使用TiClィイD24ィエD2 + NィイD22摊位ィエD2 + HィイD22摊位ィエD2气体混合物。采用两个二极管的衬底偏压电路增强离子沉积。在450 ~ 550℃温度范围内，TiN薄膜的维氏硬度值在2200Hv以上，电阻率在100 μ Ωcm以下。用RBS法研究了沉积膜的组成，确定了at。在温度为550℃时，TiN薄膜中Cl含量的%值约为1%。XRD spetra透露,这部电影的择优取向δ锡(200)和(220)沉积条件下TィイD2subィエD2 > 500℃。结果表明，采用双二极管偏置电路的50Hz等离子体气相沉积技术在三维衬底表面获得了高质量、均匀的TiN薄膜。