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Selectively doped heterojunction CCD

选择性掺杂异质结CCD

基本信息

批准号：
59850047
负责人：
SHIMOZUMA Mitsuo
金额：
$ 5.5万
依托单位：
Hokkaido University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research
财政年份：
1984
资助国家：
日本
起止时间：
1984 至 1985
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-59850047/
关键词：
heterojunction GaAs selective doping CCD MOVPE 有機金属気相成長 MOVPE MBE

项目摘要

1. Characterization of interrupted MOVPE growth interfaceInterruption of MOVPE growth is usually used to realize sharp doping profiles as well as sharp composition profiles. The effect of such a growth interruption on the electrical characteristics of the interface is investigated using C-V profiling and DLTS. When the interrupted interface is exposed to air, formation of deep levels with broad energy spectrum similar to the interface state density distribution at insulator-semiconductor structure are detected. This deep level formation is attributed to the disordering of interface atom regularity based on the unified disorder induced gap state model.2. DX centers in AlGaAsDX centers in AlGaAs play a dominant role in determining the threshold voltages of selectively doped heterostructure devices. The origin of the DX centers was, however, not clarified in spite of their importance. A new model is proposed for DX centers in which anti-bonding state of donor impurity-host bond is attributed to be the origin of the DX center. This model is based on the lineup of DX centers with respect of hybrid orbital energy of the host, suggesting the bonding-antibonding splitting of the electronic state.3. Generation of carriers at the heterojunction interfaceGeneration rate of interface electrons at selectively doped heterojunction interfaces is measured using CCD structures. It is shown that the generation rate is determined solely by the reverse current of the Al/AlGaAs Schottky barrier. The reverse current is mainly composed of generationrecombination current.4. Fabrication and operation of selectively doped heterojunction CCDsSelectively doped heterojunction CCDs are fabricated using self-aligned process to maintain the separation of electrodes in the submicron range. The successful operation of CCDs at 167 KHz is confirmed.

1. 间断MOVPE生长界面的表征MOVPE生长的间断通常用于实现清晰的掺杂分布以及清晰的成分分布。使用 C-V 分析和 DLTS 研究这种生长中断对界面电特性的影响。当中断的界面暴露在空气中时，检测到具有宽能谱的深能级的形成，类似于绝缘体-半导体结构的界面态密度分布。基于统一无序诱导能隙态模型，这种深层能级的形成归因于界面原子规则性的无序性。 2． AlGaAs 中的 DX 中心 AlGaAs 中的 DX 中心在确定选择性掺杂异质结构器件的阈值电压方面起着主导作用。然而，尽管 DX 中心很重要，但其起源并没有得到澄清。提出了 DX 中心的新模型，其中供体杂质-主体键的反键状态被归因于 DX 中心的起源。该模型基于主体杂化轨道能量的DX中心排列，表明电子态的键合-反键分裂。 3．异质结界面处载流子的生成使用CCD结构测量选择性掺杂异质结界面处的界面电子的生成率。结果表明，生成速率仅由 Al/AlGaAs 肖特基势垒的反向电流决定。反向电流主要由产生复合电流组成。4．选择性掺杂异质结 CCD 的制造和操作选择性掺杂异质结 CCD 采用自对准工艺制造，以将电极间距保持在亚微米范围内。 CCD 在 167 KHz 下成功运行已得到证实。