Development of Low Temperature Deposition Process of Carbon Thin Film by Low Frequency 50Hz Plasma CVD.

低频50Hz等离子体CVD碳薄膜低温沉积工艺的开发。

• 批准号: 02555056
• 负责人: SHIMOZUMA Mitsuo
• 金额: $ 2.18万
• 依托单位: College of Medical Technology, Hokkaido University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1990
• 资助国家: 日本
• 起止时间: 1990 至 1991
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02555056/
• 关键词: Plasma CVD; Amorphous carbon; Low frequency plasma; Low temperature process; Chemical vapor deposition; Diamond thin film; H_2+CH_4 mixture; Passivation film; 13.56MHzRFプラズマCVD法; プラズマ解離; SiH_4+N_2混合ガス; アモルファスカ-ボン薄膜

Hydrogenated amorphous carbon (a-C : H) films show large thermal conductivity, chemical inertness, high electrical resistivity and breakdown field, and optical transparency, all of which are suitable for the coating material in microelectronics as well as in mechanical applications. A number of reports have been published on the preparation of a-C : H films by various methods. The low-temperature formation of such an a-C : H film is required for microelectronics application. The purpose of the present study is to deposited of amorphous carbon films on unheated substrate using low frequency 50Hz plasma CVD with hydrogen and methane (H_2+CH_4) mixtures. The results obtained may be summarized as below.1) Major electrical and optical properties of the present a-C : H films were measured. The films were highly transparent and showed very uniform interference color. The refractive index, resistivity, breakdown field strength and the optical band gap of the obtained a-C : H film were 2.4, 10^ … More <14> OMEGA cm, 10^6 V/cm and 4.0 eV, respectively. The deposition rate of a-C : H films under the condition specified above was 60 A/h.2) Infrared absorption as well as Raman spectroscopy showed that the film predominantly consisted of sp^3-bonded C.3) The electron temperature for H_2+CH_4 plasma at 50Hz to 13.56MHz plasma power frequency range was measured from the two-line radiance ratio method using the Balmer lines (Halpha, Hbeta). The electron temperature slowly decreased with increased plasma frequency below 200 kHz, but rapidly decreased between 200 kHz and 13.56MHz. The electron temperature was 16000 K at 1kHz and 8200 K at 13.56 MHz. Accordingly, it was deduced that the electron temperature of low-frequency plasmas is larger than that in high-frequency plasmas.4) From these results, it appears that dissociation of H_2+CH_4 gas is accelerated by high temperature electrons in 50Hz plasma. Moreover, the positive ion in 50Hz plasmas bombard on the deposited film, and the bombarding ion energy is spent as migration energy for rearrangement of deposited atoms. Therefore, the deposited a-C : H films by the 50Hz plasma CVD have the high-quality properties without substrate heating. Less

氢化非晶碳（a-C：H）薄膜具有高的热导率、化学惰性、高的电阻率和击穿电场以及光学透明性，这些特性都适合于作为微电子和机械应用中的涂层材料。关于通过各种方法制备a-C：H膜，已经发表了许多报道。这种a-C：H薄膜的低温形成是微电子应用所需要的。本研究的目的是利用低频50 Hz等离子体化学气相沉积（CVD）技术，以氢气和甲烷（H_2+CH_4）为混合气体，在不加热的衬底上沉积非晶碳膜。所获得的结果可以概括如下：1）测量了本发明的a-C：H膜的主要电学和光学性质。薄膜具有高度的透明性，并显示出非常均匀的干涉色。所获得的a-C：H膜的折射率、电阻率、击穿场强和光学带隙分别为2.4、10 ...更多信息 <14>Ω cm、10^6 V/cm和4.0 eV。2）红外吸收光谱和拉曼光谱表明，薄膜主要由sp^3键合的C组成。3）用双线辐射比法测量了50 Hz ~ 13.56 MHz等离子体功率频率范围内H_2+CH_4等离子体的电子温度。在200 kHz以下，电子温度随等离子体频率的增加而缓慢下降，但在200 kHz ~ 13.56 MHz之间迅速下降。在1 kHz和13.56MHz下，电子温度分别为16000 K和8200 K。由此推断，低频等离子体的电子温度比高频等离子体的电子温度高。4）从这些结果可以看出，在50 Hz等离子体中，高温电子加速了H_2+CH_4气体的解离。此外，50 Hz等离子体中的正离子轰击沉积膜，轰击离子的能量作为沉积原子重排的迁移能量消耗。因此，在不加热衬底的情况下，50 Hz等离子体CVD沉积的a-C：H薄膜具有高质量的性能。少

项目成果

下妻 光夫,石川 基博,栃谷 元,田頭 博昭: "低周波50HzプラズマCVD法による非加熱基板上へのシリコン酸化膜生成" 電気学会論文誌A. Vol.111A. 1064-1070 (1991)

Mitsuo Shimotsuma、Motohiro Ishikawa、Hajime Tochiya、Hiroaki Tagashira：“通过低频 50Hz 等离子体 CVD 方法在未加热基板上生成氧化硅膜”日本电气工程师学会会刊 A.第 1064-1070 卷（1991 年）。

F.Ishizuka: "Measurement of the effective ionization coefficient in Ar and C_3F_8 mixtures" The Transactions of The Institute of Electrical Engineers of Japan. 111ーA. (1991)

F.Ishizuka：“Ar 和 C_3F_8 混合物中有效电离系数的测量”，日本电气工程师学会汇刊 111-A。

G. Tochitni, M. Shimozuma and H. Tagashira: "Estimation of silicon oxide films deposited by 50Hz plasma CVD using teos" Symposium on Plasma Processing. 9. 115-118 (1992)

G. Tochitni、M. Shimozuma 和 H. Tagashira：“使用 Teos 对通过 50Hz 等离子 CVD 沉积的氧化硅薄膜进行估计”等离子处理研讨会。

M.Shimozuma: "Diagnostics of H_2+CH_4 plasma for chemical vapor deposition by optical spectroscopy" Journal of Applied Physics. 67. (1991)

M.Shimozuma：“通过光谱诊断化学气相沉积的 H_2 CH_4 等离子体”应用物理学杂志。

M.Shimozuma,G.Tochitani and H.Tagashira: "Optical emission diagnostics of H_2+CH_4 50Hz-13.56MHz plasmas for chemical vapor deposition" Journal of Applied Physics. Vol.70. 645-648 (1991)

M.Shimozuma、G.Tochitani 和 H.Tagashira：“用于化学气相沉积的 H_2 CH_4 50Hz-13.56MHz 等离子体的光学发射诊断”应用物理学杂志。