DEVELOPMENT OF INTERNAL STRESS MEASUREMENT SYSTEM IN SEMICONDUCTOR USING INFRARED RAY

红外半导体内应力测量系统的研制

• 批准号: 63850026
• 负责人: DATE Kazuhiro
• 金额: $ 1.28万
• 依托单位: MIYAGI NATIONAL COLLEGE OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research
• 财政年份: 1988
• 资助国家: 日本
• 起止时间: 1988 至 1989
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-63850026/
• 关键词: Infrared Ray; Semiconductor; Photoelastic Method; Stress Measurement; Defect Detection; 半導体の応力測定; 残留応力測定; 欠陥の検出

We developed a small stress measurement system for semiconductors, which is based on a synthesized photoelastic method using infrared rays. The synthesized photoelastic method developed for ultrasonic visualization using visible rays could be applied to the system because infrared rays transmit through semiconductors.Main work of the system development can be divided into two parts. First part is to set an optical arrangement for synthesized photoelastic method application with infrared rays. Second one is a calibration method of stress evaluation because normal calibration method based on a photoelastic fringe order can not be applied.We tried some light sources, light filters and lens, and then determined to use a high power bulb as a infrared light source and a semiconductor plate as a light filter in the infrared optical system.In order to calibrate the stress from the photoelastic image, we made a double loading machine, in which a epoxy plate is loaded to make a photoelastic fringe because a quarter wavelength plate can not be used in this system principle and a semiconductor plate is too brittle to make a fringe under tensile loading. The double loading machine enabled to the calibration of the stress measurement. Sensitivity of a silicon semiconductor was about 1/10 value, compared with that of epoxy material.We measured residual stress in a silicon wafer using this system and obtained the values of 2 MPa as the residual stress with accuracy of <plus-minus>0.1 MPa. The residual stress distribution in other semiconductors could be measured using this syste

我们研制了一种小型的半导体应力测量系统，它是基于使用红外线的综合光弹性方法。由于红外线通过半导体传输，因此可以将为利用可见光进行超声可视化而开发的综合光弹性方法应用于该系统。第一部分是建立一套用于红外线合成光弹性法的光学系统。第二部分是应力评价的标定方法，由于常规的基于光弹性条纹阶数的标定方法无法应用，我们尝试了一些光源、滤光片和透镜，确定在红外光学系统中采用大功率灯泡作为红外光源，半导体片作为滤光片，为了从光弹性图像中标定应力，我们制作了双加载机，其中环氧树脂板被加载以形成光弹性条纹，因为四分之一波长板不能用于该系统原理，并且半导体板太脆而不能在拉伸载荷下形成条纹。双加载试验机可用于应力测量的校准。硅半导体的灵敏度约为环氧树脂材料的1/10，利用该系统测量了硅片的残余应力，得到残余应力为2 MPa，精度为<plus-minus>0.1MPa。该系统还可用于测量其它半导体材料的残余应力分布

项目成果

伊達和博: 応力・ひずみ測定シンポジウム. (1990)

Kazuhiro Date：应力和应变测量研讨会（1990）。

伊達和博: 日本非破壊検査協会秋季総会. 38ー9A. (1989)

Kazuhiro 日期：日本无损检测协会秋季大会。38-9A (1989)。

K.Date,Y.Udagawa: "Visualization and Evaluation of Ultrasonic Wave Stress by Stroboscopic Photoelasticity and Image Processing Techniques." Proc.,12th World Conference on NDT. 242-244 (1989)

K.Date、Y.Udakawa：“通过频闪光弹性和图像处理技术实现超声波应力的可视化和评估”。

伊達和博,田幡幸大: "光弾性画像合成法による半導体の欠陥と内部応力の評価" 応力・ひずみ測定シンポジウム. (1991)

Kazuhiro Date、Kouhiro Tabata：“使用光弹性图像合成评估半导体缺陷和内部应力”应力和应变测量研讨会（1991 年）。

K.Date, Y.Tabata: "Visualization and evaluation of Ultrasonic Wave Stress by Stroboscopic Photoelasticity and Image Processing Techniques" Proc. 12th World Conference on NDT. 242-244 (1989)

K.Date，Y.Tabata：“通过频闪光弹性和图像处理技术对超声波应力进行可视化和评估”Proc。