Development of high resolution in situ observation system for the crystal growth at high temperature
Development of high resolution in situ observation system for the crystal growth at high temperature
批准号:
61890002
负责人:
TSUKAMOTO K
金额:
$13.12万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research
财政年份:
1986
资助国家:
日本
项目状态:
已结题
起止时间:
1986 至 1987
中文摘要
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英文摘要
In situ observation of the crystal growth process for GaAs was performed. This experiment was.performed by the development of a in situ observation growth cell and an optical system using infrared light. Combination of the growth cell and the microscopy enabled us to visualize the growth and dissolution process of GaAs crystals in real time.The optical systgem also enabled us to visualize the defects in crystals by meand of reflection infreared microscopy for the first time. This observation method was found to be suitable for the present investiga- tion.Since the in situ observation system is compact and enables to visualize the growth process of varietied of crystals,it was found to be very suitable for the experiment in microgravity.
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K. Tsukamoto: "KIRARA project" J.Japan Society of Microgravity Application. 4. 3-6 (1987)
K. Tsukamoto:“KIRARA 项目”J.日本微重力应用学会。
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K.Tsukamoto: NASA Conference Publication 2438. 233-238 (1986)
K.Tsukamoto:NASA 会议出版物 2438. 233-238 (1986)
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塚本勝男: 日本マイクログラビティー応用学会誌. 4. 3-6 (1987)
Katsuo Tsukamoto:日本微重力应用学会杂志。4. 3-6 (1987)。
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K.Tukamoto Ed.by I.Sunagawa: "Growth units and morphology of crystals," Terra Science Publication,Tokyo,
K.Tukamoto Ed.by I.Sunakawa:“晶体的生长单位和形态”,Terra Science Publication,东京,
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塚本勝男: 日本マイクログラビティー応用学会誌. 5. 7-10 (1988)
Katsuo Tsukamoto:日本微重力应用学会杂志,5. 7-10 (1988)。
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