Study of crystal growth mechanism Utilizing microgravity
Study of crystal growth mechanism Utilizing microgravity
批准号:
05044081
负责人:
NISHINAGA Tatau
金额:
$4.16万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for international Scientific Research
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1994
中文摘要
在微重力下,由于热对流停止,如果避开自由表面,就可以消除溶液中的各种对流。在本项目中,利用这种理想的生长条件,研究了THR晶体在溶液中的生长机理。重点研究了MacroStep的基本生长过程。首先,用光学显微镜观察了空间生长的InP的横截面,并详细研究了宏观台阶的行为。研究发现,宏观台阶在生长初期形成,但在生长趋于稳定时消失。InP晶体是在D-2空间实验室和欧洲原子能机构任务中在德国一侧生长的。所采用的生长技术为THM(移动加热法)。在这种技术中,在生长前沿施加了相当强的温度梯度。结果表明,温度梯度和生长速度是控制宏观相产生和湮灭的主要因素。日本和德国的研究小组也联合进行了理论研究。采用宏观台阶形状边界条件数值求解三维扩散方程,结果表明,随着温度梯度的增大和生长速度的降低,宏观台阶与立管的夹角减小。俄罗斯研究小组还研究了ADP和KDP溶液在室温下从水溶液中生长的宏观步骤稳定性。结果表明,宏观台阶的出现或消失取决于流动方向与邻近表面取向的关系。这是根据与宏观步骤相关的溶质浓度的不均匀来解释的。这一观点与InP宏步进理论是一致的。结果表明,宏观台阶的产生是由三维扩散和非平坦界面引起的生长表面的不稳定性造成的。
英文摘要
Under microgravity since thermal convection is stopped, one can eliminate all kinds of convection in the solution if one avoids free surfaces. In this project, thr crystal growth mechanism in a solution was studied by making use of this ideal condition for the growth. Macrostep is especially studied to find elementary growth process. Firstly, the cross section of space grown InP was investigated by optical microscope and the behavior of macrostep was studied in detail. It was found that macrostep is formed in the beginning of the growth but it disappears when the growth approaches to a steady state. The Inp crystals were grown in Germany side in spacelab D-2 and EURECA mission. The employed growth technique was THM (traveling heater method). In this technique, rather strong temperature gradient was applied at the growth front. It turned out that the temperature gradient and the growth velocity are major factors which govern the creation and annihilation of the macrostep.Theoretical studies were also made jointly by Japanese and German groups. By solving 3D diffusion equation numerically with a shape boundary condition of macrostep, it was shown that the angle between macrostep terrace and riser decreases with increasing temperature gradient and with decreasing the growth velocity. This means that the macrostep disappears in such conditions.The macrostep stability was also studied for the solution growth of ADP and KDP at room temperature from water solution by Russian group. It was shown that macrostep appears or disappears depending on the flow direction against the orientation of vicinal surface. This was explained in terms of the non-uniformity of the solute concentration associated with the macrostep. This idea is consistent with the theory developed for the InP macrosteps. It was concluded that the origin of macrostep is the instability of the growing surface caused by the 3D diffusion and non-flat interface.
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T.Nishinaga, Peiwen Ge, Changru Huo and Jinping He: "Bridgman Growth of GaSb by Chinese Recoverable Satellite" Proc.11th ISAS Space Utilization Symposium. 11. 214-217 (1994)
T.Nishinaga、Peiwen Ge、Changru Hu、Janpin He:“中国返回式卫星对 GaSb 的布里奇曼生长”Proc.11th ISAS 空间利用研讨会。
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T.Nishinaga, T.Sugano, O.saito, T.Katoda, K.Asaka and M.Kishi: "Melt Growth of Si under Microgravity - Results of SL-J Experiments" Proc.Chino-Japan Work Shop on Microgravity Science and Technology. 2. 17-18 (1994)
T.Nishinaga、T.Sugano、O.saito、T.Katoda、K.Asaka 和 M.Kishi:“微重力下硅的熔融生长 - SL-J 实验的结果”Proc.Chino-Japan Work Shop on Microgravity Science and
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T.Nishinaga,Y.Okamoto,S.Yoda,T.Nakamura,O.Saito,Y.Hisada,H.Ando,S.Anzawa: "Rapid Melt Growth of Ge by TR-1A Sounding Rocket" J.Jpn.Soc.Microgravity Appl.10. 212-220 (1993)
T.Nishinaga,Y.Okamoto,S.Yoda,T.Nakamura,O.Saito,Y.Hisada,H.Ando,S.Anzawa:“TR-1A 探空火箭快速熔化生长 Ge” J.Jpn.Soc
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T.Nishinaga: "UTILIZATION OF MICROGRAVITY TO UNDERSTAND THE CRYSTAL GROWTH OF SEMICONDUCTORS" Microgravity Quarterly. 3. 109-113 (1993)
T.Nishinaga:“利用微重力来了解半导体的晶体生长”微重力季刊。
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Peiwen Ge,T.Nishinaga,Chongru Huo,Zhengyi Xu,Jinping He,Miyuki Masaki,Masako Washiyama,Xie Xie,Risheng Xi: "RECRYSTALLIZATION OF GaSb UNDER MICROGRAVITY DURING CHINA RETURNABLE SATELLITE No.14 MISSION" Microgravity Quarterly. 3. 161-165 (1993)
葛培文、T.Nishinaga、霍重如、徐正一、何进平、正木美幸、鹫山雅子、谢谢、奚日升:“中国返回卫星十四号飞行期间微重力下GaSb的重结晶”微重力季刊。
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共 23 条
Studies of High Quality GaAs Layers Heteroepitaxially Grown on Si Substrates by Microchannel Epitaxy and Fabrication of Laser Diodes
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批准号:10555119
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$6.98万
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财政年份:1998
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负责人:NISHINAGA Tatau
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依托单位:
GROWTH OF HIGH QUALITY SEMICONDUCTORS BY CONTAINER LESS METHOD UNDER MICROGRAVITY
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批准号:10044131
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$3.58万
-
财政年份:1998
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负责人:NISHINAGA Tatau
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依托单位:
STUDIES ON INTERSURFACE DIFFUSION IN NANO-STRUCTURE EPITAXY
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批准号:09450008
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.15万
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财政年份:1997
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负责人:NISHINAGA Tatau
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依托单位:
Studies of High Quality InP Layrs Heteroepitaxially Grown on Si Substrates by Epitaxial Lateral Overgrowth and Fabrication of Long-wavelengh Laser Diodes
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批准号:07555107
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$8.96万
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财政年份:1995
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负责人:NISHINAGA Tatau
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依托单位:
MELT GROWTH OF SEMICONDUCTORS IN WEIGHTLESS ENVIRONMENT
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批准号:07044125
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$4.61万
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财政年份:1995
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负责人:NISHINAGA Tatau
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依托单位:
STRUCTURAL DYNAMICS OF EPITAXY AND QUANTUM MECHANICAL APPROACH
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批准号:07305001
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$6.21万
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财政年份:1995
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负责人:NISHINAGA Tatau
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依托单位:
ELEMENTAL GROWTH PROCESS OF SEMICONDUCTOR ON VICINAL SURFACE
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批准号:03044045
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$4.16万
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财政年份:1991
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负责人:NISHINAGA Tatau
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依托单位:
DISLOCATION FREE TECHNOLOGY FOR HIGHLY LATTICE MISMATCHED HETEROEPITAXY
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批准号:02555057
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$10.24万
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财政年份:1990
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负责人:NISHINAGA Tatau
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依托单位:
New Technique to Grow High Quality SOI layer
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批准号:62850052
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$14.53万
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财政年份:1987
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负责人:NISHINAGA Tatau
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依托单位:
海外基金