Coherent spin transport in semiconductors

半导体中的相干自旋输运

• 批准号: 40956248
• 负责人: Dr. Bernd Beschoten
• 金额: --
• 依托单位: II. Physikalisches Institut A - Physik der kondensierten Materie
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2007
• 资助国家: 德国
• 起止时间: 2006-12-31 至 2014-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/40956248?language=en
• 关键词: Coherent; spin; transport; semiconductors

Within the previous funding period, we have shown that spin dephasing times of donor electrons in unintentionally doped ZnO epilayers can exceed 30 ns. For the next funding period, we propose to explore whether the magnetic exchange interaction between neighbouring donor spins from different donor atoms can be manipulated by optical means. Furthermore, we propose to extend our previous experiments on electrical spin injection into ZnO towards the time-domain using an electrical pump/- optical probe scheme to unveil phase information of the injected electron spins. In a second focus, we propose to extend our spin injection and transport studies to Si-based nanostructures. We will use a non-local spin valve geomatry for spin injection and detection in Si using ferromagnetic electrodes and Al2O3 as injection barrier. For time-resolved all-electrical studies, we will exploit a novel electrical pump probe experiment, which shall be used for phase sensitive detection of coherent spin currents.

在之前的资助期内，我们已经证明，在无意掺杂的ZnO薄膜中，供体电子的自旋失相时间可以超过30 ns。在下一个资助期，我们建议探索是否可以通过光学手段操纵来自不同给体原子的相邻给体自旋之间的磁交换相互作用。此外，我们建议将之前的电子自旋注入ZnO的实验扩展到时间域，使用电泵/光探针方案来揭示注入的电子自旋的相位信息。在第二个重点中，我们建议将我们的自旋注入和输运研究扩展到硅基纳米结构。我们将使用非局部自旋阀几何技术在Si中进行自旋注入和检测，使用铁磁电极和Al2O3作为注入屏障。对于时间分辨的全电研究，我们将开发一种新的电泵探针实验，该实验可用于相干自旋电流的相敏检测。