Spin injection and detection in Silicon based heterostructures

硅基异质结构中的自旋注入和检测

• 批准号: 40956481
• 负责人: Professor Dr. Dominique Bougeard
• 金额: --
• 依托单位: Institut für Experimentelle und Angewandte Physik
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2007
• 资助国家: 德国
• 起止时间: 2006-12-31 至 2014-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/40956481?language=en
• 关键词: Spin; injection; detection; Silicon; based

Silicon being the dominant material used in semiconductor industry, the demonstration of reliable control of electron spin ensembles in Si compatible structures represents a milestone towards a commercial application of all-semiconductor spintronic devices. Due to intrinsic properties of bulk Si this demonstration has proven to be challenging until very recently. This project aims at the demonstration of spin injection and transport in Si based thin films as well as at the exploration of the underlying physical phenomena. A key element will be the use of carrier confinement with Germanium quantum dots in Si and Silicon-Germanium quantum wells, giving access to an optical probing of electron spins. In a second focus we will characterize self-assembled Germanium Manganese nanomagnets in a Si matrix. Nanomagnetism studied in semiconductor matrices offers an interesting approach to understand the properties of magnetic semiconductors as well as the possibility of efficient spin injection into Si.

硅是半导体工业中使用的主要材料，在硅兼容结构中可靠控制电子自旋集成的演示代表了全半导体自旋电子器件商业应用的里程碑。由于体硅的固有特性，直到最近，这个演示被证明是具有挑战性的。本项目旨在展示硅基薄膜中的自旋注入和输运，并探索其潜在的物理现象。一个关键因素是在硅和硅锗量子阱中使用锗量子点的载流子约束，从而实现对电子自旋的光学探测。在第二个重点，我们将表征自组装锗锰纳米磁铁在硅基质。在半导体矩阵中研究纳米磁性提供了一种有趣的方法来理解磁性半导体的性质以及有效自旋注入Si的可能性。