Active Probe for On-Wafer SiGe HBT Device Characterization up 750 GHz (APSiCa)

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The project APSiCa aims at developing active mm-wave probes for the frequency range 220 to 750GHz. These probes will then be used for characterization, modeling and verification of the developed models of HBTs. In contrast to the currently used probing approach, the proposed solution uses a novel contacting. Additionally, the necessary frequency extenders (alternatively reflectometers), will be integrated directly into the proposed probing device. Thus, a difficult measurement setup using bulky, external frequency extenders can be avoided. The special design allows for a compact contacting of the on-wafer structures to be measured and avoids crosstalk or coupling from one port to the other. Due to the arrangement of the probe tips, a higher placement accuracy as well as repeatability for on-wafer measurements can be achieved. By integration of the frequency extenders directly into the proposed probing device, no difficult measurement setup or any special equipment is needed anymore. By following this idea, a network analyzer can be connected directly to the proposed probing device instead of bulky external frequency extenders. For the probing device with integrated reflectometers, the expensive network analyzer can be replaced by a simple processing electronic. In parallel to the development of the proposed probing device, existent compact transistor models will be extended to higher frequencies. The currently existing models are deduced from low frequency measurements and are usually not verified for frequencies above 110GHz. The models extended to higher frequencies can then be evaluated by measurements with the proposed probing device. For lower frequencies, for which the currently used probing approach is available, measurements can be performed with both solutions. Thus, a performance evaulation as well as a comparison to the currently used probing approach becomes possible.