Spin-Hall effect in 3D- and 2D-hole systems

3D 和 2D 孔系统中的自旋霍尔效应

• 批准号: 41099714
• 负责人: Professor Dr. Dieter Weiss
• 金额: --
• 依托单位: Institut für Experimentelle und Angewandte Physik
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 财政年份: 2007
• 资助国家: 德国
• 起止时间: 2006-12-31 至 2014-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/41099714?language=en
• 关键词: Spin; Hall; effect; 3D; 2D

The spin-Hall effect is about the generation of a transverse pure spin current by an electrical charge current as a consequence of spin-orbit interaction in, e.g., semiconductors. This spin current in turn can generate a detectable electric field (inverse spin-Hall effect). In our proposal we plan to explore the spin-Hall effect in three (3D) and two-dimensional (2D) hole systems. By employing p-epilayers and high mobility 2D hole systems (2DHS) in GaAs based heterojunctions we focus on three geometries, the "H-geometry", the "spin-injection-geometry" and a Hall bar geometry to probe the spin-Hall effect electrically. For the last phase of this Priority Program we put emphasis especially on the latter two geometries. Here, the Hall geometry is a new additional geometry which can be considered is an electrical analogue of Awschalom’s optical experiments.

自旋霍尔效应是关于由电荷电流产生的横向纯自旋流，作为例如半导体中自旋-轨道相互作用的结果。这种自旋电流反过来可以产生可检测到的电场(反向自旋霍尔效应)。在我们的方案中，我们计划探索三维(3D)和二维(2D)空穴系统中的自旋霍尔效应。通过采用p-外延层和高迁移率2D空穴系统(2DHS)，我们重点研究了三种几何结构，即“H几何”、“自旋注入几何”和霍尔棒几何，对自旋-霍尔效应进行了电学探测。对于这个优先计划的最后阶段，我们特别强调后两个几何形状。这里，霍尔几何是一种新的附加几何，可以认为是对Awschalom光学实验的电学类比。