ICP-RIE plasma etching machine

ICP-RIE等离子蚀刻机

• 批准号: 414743279
• 金额: --
• 依托单位: Ruprecht-Karls-Universität Heidelberg
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2018
• 资助国家: 德国
• 起止时间: 2017-12-31 至 无数据
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/414743279?language=en
• 关键词: ICP; RIE; plasma; etching; machine

The ICP-RIE plasma etching machine will be mainly used to fabricate metallic magnetic calorimeters (MMCs) as well as superconducting quantum interference devices (SQUIDs). Furthermore, the system will be used to develop and implement new fabrication processes which allows to make existing microfabrication processes more reliable and reproducible to ultimately increase the yield of the fabrication of MMCs and SQUIDs. On the other hand, we want to extend the fabrication abilities to allow to realize new detector concepts. The ICP-RIE plasma etching system will particularly be used to etch different metals such as Nb, Al, Au, dielectrics such as silicon oxide or silicon nitride as well as to etch silicon. The thickness of the layer to be etched ranges from several nanometers to several microns and in case of silicon up to several hundred microns.

ICP-RIE等离子体刻蚀机将主要用于制造金属磁量热器（MMC）以及超导量子干涉器件（SQUID）。此外，该系统将用于开发和实施新的制造工艺，使现有的微制造工艺更加可靠和可重复，最终提高MMC和SQUID制造的产量。另一方面，我们希望扩展制造能力，以实现新的探测器概念。ICP-RIE等离子体蚀刻系统将特别地用于蚀刻不同的金属，例如Nb、Al、Au、诸如氧化硅或氮化硅的金属，以及蚀刻硅。待蚀刻的层的厚度范围从几纳米到几微米，并且在硅的情况下高达几百微米。