Selective area growth of cubic group III-Nitrides on nano-patterned 3C-SiC (001) substrates

纳米图案 3C-SiC (001) 衬底上立方 III 族氮化物的选择性区域生长

• 批准号: 418748882
• 负责人: Professor Dr. Donat Josef As
• 金额: --
• 依托单位: Arbeitsgruppe "Optoelektronische Halbleiter - Gruppe III-Nitride"
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2019
• 资助国家: 德国
• 起止时间: 2018-12-31 至 2022-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/418748882?language=en
• 关键词: Selective; area; growth; cubic; group

The aim of the project is the growth of cubic group III-Nitrides on pre-patterned 3C-SiC (001) substrates with reduced dislocation density. Using e-beam lithography (EBL) and reactive ion-etching (RIE) V-shaped and U-shaped grooves with dimensions in the 50 nm scale will be etched into the substrate or through dielectric masks. The grooves and openings with dimensions in the nanometer scale will be selectively overgrown with AlN and GaN via molecular beam epitaxy (MBE). If the nanostructures have a high aspect ratio (ratio depth to width >>1) an effective dislocation filtering shall occur within the openings or grooves and the dislocation density shall be reduced by several orders of magnitude in cubic group III Nitrides. The cubic group III-nitrides will be characterized by high resolution TEM, AFM, HRXRD, Raman, cathodoluminescence and micro-photoluminescence. In addition, the coalescence of cubic GaN epilayers will be studied on structures with suitable selection of the distances of the openings.

该项目的目标是在预图案化的3C-SiC(001)衬底上生长立方III族氮化物，并降低位错密度。使用电子束光刻(EBL)和反应离子刻蚀(RIE)，尺寸在50 nm尺度的V形和U形沟槽将被刻蚀到衬底上或通过介质掩模。通过分子束外延(MBE)，在纳米尺度的沟槽和开口上选择性地生长AlN和GaN。如果纳米结构具有高纵横比(深度与宽度之比)，则在开口或沟槽内应发生有效的位错过滤，并且立方族III氮化物中的位错密度应降低几个数量级。用高分辨透射电子显微镜、原子力显微镜、高分辨X射线衍射仪、拉曼光谱、阴极发光和显微光致发光等手段对立方族氮化物进行了表征。此外，还将在适当选择开口距离的结构上研究立方GaN外延层的结合。