Study on Atomic Layer Epitaxy of Wide-Gap Compound Semiconductors by Metalorganic Vapor Phase Growth

本研究尝试了化合物半导体gaasp相关量子阱和立方GaN的晶体生长和表征。我们将晶体生长特征和材料性质澄清如下。1)基于GaAs/GaAsp和GaAsp /GaP异质结构的应变层量子阱结构得到了生长。通过光致发光、红外反射光谱和光反射率测量，确定了异质界面处的波段不连续，显示了合金成分和应变依赖性。2)以二甲基肼为V (N)族元素源成功生长GaN。结果表明，生长的立方氮化镓在晶体完美性方面更胜一筹。这是“结构转变异质外延”的一种实现，形成了外延生长技术的新概念。在接下来的步骤中，将进一步改进生长方法，表征其他特性并尝试将其应用于光子器件。

In this study, crystal growth and characterization of compound semiconductor GaAsP-related quantum wells and cubic GaN have been attemped. We have clarified the crystal growth features and the materials properties as the folowing.1) Strained-layer quantum well structures based on the GaAs/GaAsp and GaAsP/GaP heterostructures have been grown. From photoluminescence, infrared reflectance spectroscopy and photoreflectance measurements, the band discontinuity at the heterointerfaces has been determined, showing alloy composition and strain dependences.2) GaN has been successfully grown using dimethylhydrazine as the group V (N) element source. It has been show that the grown cubic GaN is superior in its crystal perfection. This is a realization of "structural transformation heteroepitaxy", which forms a new concept of epitaxial growth technology.For the next steps, further improvements in the growth method, characterization of other properties and atempts for photonic device applicatios are to be carried out.