STUDY ON GROWTH AND MATERIAL PROPERTIES OF METASTABLE NITRIDE ALLOY SEMICONDUCTORS

亚稳态氮化物合金半导体的生长及材料性能研究

• 批准号: 06452107
• 负责人: ONABE Kentaro
• 金额: $ 5.38万
• 依托单位: THE UNIVERSITY OF TOKYO
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06452107/
• 关键词: NITRIDE ALLOY SEMICONDUCTOR; GaPN ALLOY; WIDEGAP COMPOUND SEMICONDUCTOR; METASTABLE ALLOY SEMICONDUCTOR; GALLIUM PHOSPHIDE; GALLIUM NITRADE; METALORGANIC VAPOR PHASE EPITAXY; MOVPE

Growth and material properties of nitride alloy semiconductors of the type III-V-N,where GaPN alloy is the representative, have been investigated. This group of alloy semiconductors had been hard to grow due to their extreme immiscibility. The present research project achieved the following major results, which will lead to new technological applications.1.Growth of GaPN Alloys : The growth characteristics of GaPN alloy by metalorganic vapor phase epitaxy using dimethylhydrazine have been clarified. The alloy composition is much affected by the desorption of N atom species from growing surface. Based on these growth characteristics, GaPN alloys with the N concentration as much as 6% have been successfully attained.2.The Origin and Property of Radiative Levels : From optical measurements and analyzes like absorption, photoluminescence and excitation spectroscopies, the radiative levels have been found to originate from the quasi-localized levels formed in the density-of-states tails at the band edge. The relaxation process of excited carriers at low temperatures is governed by the radiative transitions via N-N pair levels for N concentrations below 1%, and by the relaxation to nonradiative and then to quasi-localized radiative levels for the N concentrations above 1%.3.Evolution of Band Edge with Increasing N Concentration : It has been that the band edge of GaPN alloys originates from the isolated-N levels in the host GaP crystal. The behavior of mobility edge for quasi-localized excitons has been clarified. These findings are much consistent with a theoretical calculation for the energy bands based on the tight-binding method, and suggest that the huge bowing in the composition dependence of the GaPN energy gap is an intrinsic property of GaPN as well as other related nitride alloys such as GaAsPN and InGaPN.

本文研究了以GaPN合金为代表的III-V-N型氮化物合金半导体的生长和材料特性。这类合金半导体，因为极不稳定，一直很难生长。本研究项目取得了以下主要成果，这些成果将导致新的技术应用。1. GaPN合金的生长：已经阐明了使用二甲肼的金属有机气相外延生长GaPN合金的特性。从生长表面脱附的N原子种类对合金成分有很大影响。基于这些生长特性，我们成功地制备出了N含量高达6%的GaPN合金。2.辐射能级的来源和性质：通过吸收光谱、光致发光光谱和激发光谱等光学测量和分析，发现辐射能级来源于带边态密度尾部形成的准定域能级。在低温下，受激载流子的弛豫过程在N浓度低于1%时由N-N对能级的辐射跃迁控制，在N浓度高于1%时由弛豫到无辐射能级再到准定域辐射能级控制。3.带边随N浓度的演化：GaPN合金的带边来源于GaP晶体中孤立的N能级。阐明了准定域激子迁移率边的行为。这些发现与基于紧束缚方法的能带的理论计算非常一致，并且表明GaPN能隙的成分依赖性中的巨大弯曲是GaPN以及其他相关氮化物合金（例如GaAsPN和InGaPN）的固有性质。

项目成果

H.Yaguchi 他: "Time-resolved Photoluminescence Study of GaP_<1-X>N_X Alloys" 14th Electronic Materials Symposium. 53-54 (1995)

H. Yaguchi 等人：“GaP_<1-X>N_X 合金的时间分辨光致发光研究”第 14 届电子材料研讨会 53-54 (1995)。

S.Miyoshi 他: "MOVPE Growth of Strained GaP_<1-X>N_X/GaP Quantum Wells" Inst.Phys.Conf.Ser.136. 637-642 (1994)

S. Miyoshi 等人：“应变 GaP_<1-X>N_X/GaP 量子阱的 MOVPE 生长”Inst.Phys.Conf.Ser.136 (1994)。

K.Onabe: "MOVPE GROWTH AND OPTICAL CHARACTERIZATION OF GaPN METASTABLE ALLOY SEMICONDUCTORS" MRS Conf.Proc."III-V Nitrides". 449(to be published). (1997)

K.Onabe：“GaPN 亚稳态合金半导体的 MOVPE 生长和光学特性”MRS Conf.Proc.“III-V 氮化物”。

H.Yaguchi: ""Photoluminescence Excitation Spectroscopy of GaPl-xNx Alloys"" 15th Electronic Materials Symposium. 53-56 (1996)

H.Yaguchi：“GaPl-xNx 合金的光致发光激发光谱”第 15 届电子材料研讨会。

H.Yaguchi: ""Time-resolved Photoluminescence Study of GaPl-xNx Alloys"" 14th Electronic Materials Symposium. 53-54 (1995)

H.Yaguchi：“GaPl-xNx 合金的时间分辨光致发光研究”第 14 届电子材料研讨会。