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Huge Bandgap-Bowing Effect in III-V-N Type Nitride Alloy Semiconductors and its Applications

III-V-N型氮化物合金半导体的巨大带隙弯曲效应及其应用

基本信息

批准号：
11450003
负责人：
ONABE Kentaro
金额：
$ 9.73万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450003/
关键词：
diluted nitride alloy GaAsN InGaAsN InGaPN slloy semiconductors huge bandgap bowing MOVPE RF-MBE InAsN 巨大バンドギャッブボウイング GaNP GaNAs 有機金属気相成長窒化物半導体巨大ボウイング

项目摘要

This research project has realized III-V-N type nitride alloy semiconductors such as GaAsN, GaPN, InAsN, GaAsPN, InGaAsN and InGaPN, with N concentrations far beyond the thermodynamic equilibrium limit using metal-organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) as efficient epitaxial growth methods. Epitaxial growth conditions have been established for alloy layers with high structural and optical qualities which are reasonably applicable to devices. Structural properties such as compositional inhomogeneity and defects have been clarified in relation to N concentrations and growth conditions. It has been found that optical properties near the band edge are significantly affected by localized states which are originated by isolated or clustered N atoms at diluted N concentration regions. It has been found that huge bandgap bowing effect is a characteristic feature common in all the III-V-N type alloys. The bandgap bowing parameters have been established for each III-V-N ternary and quaternary alloy. Quantum-well structures involving III-V-N type alloys have been investigated, and shown that with a proper choice of heterostructure will give an efficient electron confinement to quantum wells due to higher band offsets.

本研究计划利用金属有机物气相磊晶（MOVPE）与分子束磊晶（MBE）等有效磊晶成长方法，已实现氮浓度远超过热力学平衡极限之III-V-N型氮化物合金半导体，例如GaAsN、GaPN、InAsN、GaAsPN、InGaAsN与InGaPN。外延生长条件已经建立了合金层具有高的结构和光学质量，这是合理适用于设备。结构特性，如成分的不均匀性和缺陷已被澄清有关的N浓度和生长条件。研究发现，在稀氮浓度区，孤立或成团的氮原子所产生的局域态对带边附近的光学性质有显著的影响。已经发现，巨大的带隙弯曲效应是所有III-V-N型合金中共同的特征。已经建立了每个III-V-N三元和四元合金的带隙弯曲参数。已经研究了涉及III-V-N型合金的量子阱结构，并且表明，通过适当选择异质结构，由于更高的带偏移，将对量子威尔斯提供有效的电子限制。