A Study of Photoelectron Emission Patterns from the Super-Structures on Semiconductor Surfaces Using a New Electron Energy Analyzer

使用新型电子能量分析仪研究半导体表面超结构的光电子发射模式

• 批准号: 01460257
• 负责人: DAIMON Hiroshi
• 金额: $ 4.93万
• 依托单位: Osaka University (1990)The University of Tokyo (1989)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1989
• 资助国家: 日本
• 起止时间: 1989 至 1990
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-01460257/
• 关键词: Spherical Mirror Analyzer; Energy Analyzer; 2-dimensional Detection; Photoelectron Spectroscopy; Energy Band; Electronic State; Surface; Photoelectron Diffraction; 分析器; 角度分布; 光電子回析

The subject of this research is the study of the photoelectron emission patterns from the superstructures on semiconductor surfaces using a new display-type spherical mirror analyzer. This analyzer can display the angular distribution pattern of charged particles of one kinetic energy emitted from a sample surface. The characteristics of this analyzer are (1) the pattern is not distorted, (2) the acceptance cone is ultimately wide (2pi steradian).In 1989 the angular distribution pattern of the photoelectrons from core electrons have been measured using X-rays or synchrotron radiations (SR). The sample crystals used were Si, TaC, W etc., and adsorbate was Ga atoms. The angular distribution pattern of core photoelectrons involve structural informations because they suffer from diffraction process when they escape from the sample surface. The analysis of the pattern thereby gives the structure around the emitting atom. Many new patterns have been obtained using SR (ref. 5, 6).In 1990 the angular distribution pattern of the photoelectrons from valence band states have been measured using He I or II resonance lamp. The angular distribution pattern at this energy region shows the 2-dimensional map of the electronic energy band structure. Hence, this study may give precise informations about the band structure especially the shape of the Fermi surface. The sample used was a single crystal of graphite (Kish graphite). The obtained band structure was in good agreement with theory or the experimental ones in the literatures. This result is the first 2-dimensional measurement of the band structure in Japan, and the second one in the world.

本研究的主题是利用一种新的显示型球镜分析器来研究半导体表面超结构的光电子发射模式。该分析仪可以显示从样品表面发射的具有一个动能的带电粒子的角分布图。这种分析器的特点是（1）图形不失真，（2）接收锥最终宽（2 π球面度）。1989年，用X射线或同步辐射（SR）测量了芯电子光电子的角分布图形。使用的样品晶体是Si、TaC、W等，吸附质为Ga原子。芯光电子在逸出样品表面时会受到衍射作用，其角分布图包含了样品的结构信息。对图案的分析由此给出了发射原子周围的结构。1990年用He Ⅰ或Ⅱ共振灯测量了价带态光电子的角分布图。在该能量区域的角分布图案示出了电子能带结构的二维图。因此，这项研究可以提供有关能带结构，特别是费米面形状的精确信息。使用的样品是石墨的单晶（Kish石墨）。所得能带结构与文献中的理论和实验结果符合较好。这是日本首次对能带结构进行二维测量，也是世界上第二次。

项目成果

H. Daimon, C. I. Chung, S. INO, Y. Watanabe: ""A Study of Si (111) 5X 2-Au Structures by Li adsorption and Their Co-adsorbed Superstructures"" Surf. Sci.235(2/3). 142-155 (1990)

H. Daimon、C. I. Chung、S. INO、Y. Watanabe：“通过 Li 吸附及其共吸附超结构研究 Si (111) 5X 2-Au 结构”Surf。

H.Daimon et al.: "A study of the Si(111)5×2-Au structures by Li adsorption and their co-adsorbed superstructures" Surface Science. (1990)

H.Daimon 等人：“通过 Li 吸附及其共吸附超结构研究 Si(111)5×2-Au 结构”Surface Science (1990)。

Y.Tezuka: "Change of surface electronic states induced by Li and K adsorption on the Si(7x7) structures" Japanese Journal of Applied Physics. 29. 1773-1777 (1990)

Y.Tezuka：“Si(7x7) 结构上 Li 和 K 吸附引起的表面电子态变化”日本应用物理学杂志。

H. Daimon, and S. Ino: ""One Dimensional Circular Diffraction Patterns"" Surf. Sci.242. 274-282 (1989)

H. Daimon 和 S. Ino：“一维圆形衍射图案”冲浪。

H. Daimon, Y. Tezuka, A. Otaka, N. Kanada, S. K. Lee, S. Ino, H. Namba, and H. Kuroda: ""Two Dimensional Photoelectron Diffraction Pattern by Display-type Spherical Mirror Analyzer"" Surf. Sci.242. 288-293 (1991)

H. Daimon、Y. Tezuka、A. Otaka、N. Kanada、S. K. Lee、S. Ino、H. Namba 和 H. Kuroda：“显示型球面镜分析仪的二维光电子衍射图案”冲浪。