Carbom free MOMBE growth by comlete cracking of the metal organic precarsores.
Carbom free MOMBE growth by comlete cracking of the metal organic precarsores.
批准号:
02452144
负责人:
HASEGAWA Fumio
金额:
$2.05万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1990
资助国家:
日本
项目状态:
已结题
起止时间:
1990 至 1991
中文摘要
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英文摘要
The aim of this work is to achieve a carbon free MOMBE growth by removing the carbon from methyl radical the metalorganic precursors, such as TMG.The first trial was complete cracking of the methane (CH_4), but it was found that it is difficult, e13EA\ : specially in vacuum, because that the sticking probability of methane on the heater is too small. Next trial was a reverse way : removal of methyl radical from metal organic as methane using atomic hydrogen produced by a heated tungsten (W) filament13EA\ : . It seemed to be possible because TMG (Trimethy gallium) was seemed to be cracked to gallium gydride (gallan) and methane, when a small amount of TMG was passed through a heated tungsten filament of about 2000゚C.However, when the amount of TMG was13EA\ : increased one order of magnitude in order to grow GaAs, it was found that the W filament was broken due to a reaction with the cracked gallium.Finally, it was confirmed that the best way is to use a new precursor, dimethyl amine gallan (GaH_3-NH(CH_3)_2--DMAG), which has no direct bond between Ga and C.the carbon concentration was reduced by about 5 orders of magnitudes : from 10^<20> c13EA\ : m^<-3> for the film grown with TMG to 1,2x10^<15> cm^<-3> for the film grown by DMAG at 550C.The carbon reduction was also confirmed by photoluminescence. The DMAG was stable for about 2 months as far as it was kept at about -10゚C.
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R.Kobayashi,K.Fujii and F.Hasegawa: "Etiching of GaAs and AlGaAs by H^* Radical Produced by a Tungsten Filament." 1991(18th)Int.symp.GaAs and Related Compounds.(Inst.of Phys.,Conf.Ser.No120,Bristol,1992). 120. 43-48 (1992)
R.Kobayashi、K.Fujii 和 F.Hasekawa:“通过钨丝产生的 H^* 自由基蚀刻 GaAs 和 AlGaAs”。
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通讯作者:
R.Kobayashi, K.Fujii and F.Hasegawa: "Etching of GaAs and AlGaAs by H^<**> radical produced with a tungsten" Inst.Phys.Conf.Ser.No.120 Proc.of GaAs and Related Compounds, Seattle. No.120. 43-48 (1992)
R.Kobayashi、K.Fujii 和 F.Hasekawa:“用钨产生的 H^<**> 自由基蚀刻 GaAs 和 AlGaAs”Inst.Phys.Conf.Ser.No.120 Proc.of GaAs 和相关化合物,
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K.Ishikura, K.Hayashi T.Ogawa and F.Hasegawa: "Low carbon doped MOMBE using Dimethyl-Amine-Gallan" To be submitted to Japan. J.Appl.Phys.(1993)
K.Ishikura、K.Hayashi T.Okawa 和 F.Hasekawa:“使用二甲胺-加仑的低碳掺杂 MOMBE” 提交给日本。
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R.kobayashi,K.Fujii and F.Hasegawa: "Etching of GaAs by Atomic Hydrogen Generated by a Tungsten Filament" Japan.J.Appl.Phys.30. L1447-L1449 (1991)
R.kobayashi、K.Fujii 和 F.Hasekawa:“通过钨丝产生的原子氢蚀刻 GaAs”Japan.J.Appl.Phys.30。
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作者:
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通讯作者:
K.Ishikura,K.Hayashi T.Ogawa and F.Hasegawa: "Low carbon doped MOMBE using Dimethyl-Amine-Gallan" Tobe submitted to Japan.J.Appl.Phys.(1993)
K.Ishikura、K.Hayashi T.Okawa 和 F.Hasekawa:“使用二甲胺-加仑的低碳掺杂 MOMBE”Tobe 提交给 Japan.J.Appl.Phys.(1993)
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共 7 条
Investigation of a solar battery using the environmentally friendly semiconductor : beta-FeSi_2
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批准号:12450137
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$6.21万
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财政年份:2000
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负责人:HASEGAWA Fumio
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依托单位:
Fabrication of single crystalline bulk GaN substrates using GaAs as seed crystals
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批准号:09555002
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$5.89万
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财政年份:1997
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负责人:HASEGAWA Fumio
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依托单位:
Fabrication of single crystalline bulk GaN substrates using GaAs as seed crystals
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批准号:09450121
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$5.44万
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财政年份:1997
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负责人:HASEGAWA Fumio
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依托单位:
Preparation and properties of Hetero-junctions between PtSi or p-Si and p-Si/Ge strained superlattice
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批准号:04452168
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$2.24万
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财政年份:1992
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负责人:HASEGAWA Fumio
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依托单位:
海外基金