Carbom free MOMBE growth by comlete cracking of the metal organic precarsores.
通过金属有机前体的完全裂解实现无碳 MOMBE 生长。
基本信息
- 批准号:02452144
- 负责人:
- 金额:$ 2.05万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for General Scientific Research (B)
- 财政年份:1990
- 资助国家:日本
- 起止时间:1990 至 1991
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The aim of this work is to achieve a carbon free MOMBE growth by removing the carbon from methyl radical the metalorganic precursors, such as TMG.The first trial was complete cracking of the methane (CH_4), but it was found that it is difficult, e13EA\ : specially in vacuum, because that the sticking probability of methane on the heater is too small. Next trial was a reverse way : removal of methyl radical from metal organic as methane using atomic hydrogen produced by a heated tungsten (W) filament13EA\ : . It seemed to be possible because TMG (Trimethy gallium) was seemed to be cracked to gallium gydride (gallan) and methane, when a small amount of TMG was passed through a heated tungsten filament of about 2000゚C.However, when the amount of TMG was13EA\ : increased one order of magnitude in order to grow GaAs, it was found that the W filament was broken due to a reaction with the cracked gallium.Finally, it was confirmed that the best way is to use a new precursor, dimethyl amine gallan (GaH_3-NH(CH_3)_2--DMAG), which has no direct bond between Ga and C.the carbon concentration was reduced by about 5 orders of magnitudes : from 10^<20> c13EA\ : m^<-3> for the film grown with TMG to 1,2x10^<15> cm^<-3> for the film grown by DMAG at 550C.The carbon reduction was also confirmed by photoluminescence. The DMAG was stable for about 2 months as far as it was kept at about -10゚C.
本工作的目的是通过金属有机前驱体(如TMG)去除甲基自由基中的碳来实现无碳MOMBE生长,第一次尝试是完全裂解甲烷(CH_4),但发现这是困难的,特别是在真空中,因为甲烷在加热器上的粘附概率太小。下一个试验是相反的方式:使用由加热的钨(W)催化剂13 EA产生的原子氢从金属有机物如甲烷中去除甲基自由基。这似乎是可能的,因为TMG当少量TMG通过约2000 ℃的加热钨丝时,TMG(三甲基镓)似乎裂解成氢化镓(镓烷)和甲烷。增加一个数量级以生长GaAs,发现W丝由于与破裂的镓反应而断裂。最后,结果表明,采用一种新的Ga和C之间没有直接键合的前驱体--二甲胺镓酸盐(GaH_3-NH(CH_3)_2--DMAG),可以使碳浓度降低5个数量级,从TMG生长的10 × 10 ~<20>(13)EAl:m ~ 2降低<-3>到<15><-3>550 ℃下DMAG生长的1.2 × 10 ~(13)EAl:m ~ 2,光致发光也证实了碳的减少。DMAG保持在约-10 ° C时稳定约2个月。
项目成果
期刊论文数量(9)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
R.Kobayashi,K.Fujii and F.Hasegawa: "Etiching of GaAs and AlGaAs by H^* Radical Produced by a Tungsten Filament." 1991(18th)Int.symp.GaAs and Related Compounds.(Inst.of Phys.,Conf.Ser.No120,Bristol,1992). 120. 43-48 (1992)
R.Kobayashi、K.Fujii 和 F.Hasekawa:“通过钨丝产生的 H^* 自由基蚀刻 GaAs 和 AlGaAs”。
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- 影响因子:0
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R.Kobayashi, K.Fujii and F.Hasegawa: "Etching of GaAs and AlGaAs by H^<**> radical produced with a tungsten" Inst.Phys.Conf.Ser.No.120 Proc.of GaAs and Related Compounds, Seattle. No.120. 43-48 (1992)
R.Kobayashi、K.Fujii 和 F.Hasekawa:“用钨产生的 H^<**> 自由基蚀刻 GaAs 和 AlGaAs”Inst.Phys.Conf.Ser.No.120 Proc.of GaAs 和相关化合物,
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- 影响因子:0
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K.Ishikura, K.Hayashi T.Ogawa and F.Hasegawa: "Low carbon doped MOMBE using Dimethyl-Amine-Gallan" To be submitted to Japan. J.Appl.Phys.(1993)
K.Ishikura、K.Hayashi T.Okawa 和 F.Hasekawa:“使用二甲胺-加仑的低碳掺杂 MOMBE” 提交给日本。
- DOI:
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- 影响因子:0
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K.Ishikura,K.Hayashi T.Ogawa and F.Hasegawa: "Low carbon doped MOMBE using Dimethyl-Amine-Gallan" Tobe submitted to Japan.J.Appl.Phys.(1993)
K.Ishikura、K.Hayashi T.Okawa 和 F.Hasekawa:“使用二甲胺-加仑的低碳掺杂 MOMBE”Tobe 提交给 Japan.J.Appl.Phys.(1993)
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- 影响因子:0
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R.kobayashi,K.Fujii and F.Hasegawa: "Etching of GaAs by Atomic Hydrogen Generated by a Tungsten Filament" Japan.J.Appl.Phys.30. L1447-L1449 (1991)
R.kobayashi、K.Fujii 和 F.Hasekawa:“通过钨丝产生的原子氢蚀刻 GaAs”Japan.J.Appl.Phys.30。
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HASEGAWA Fumio其他文献
Estimation of the Plant Height for Energy Crops Using UAV-SfM Method
利用 UAV-SfM 方法估算能源作物株高
- DOI:
10.3775/jie.101.265 - 发表时间:
2022 - 期刊:
- 影响因子:0.2
- 作者:
HASEGAWA Fumio;YOSHIKAWA Shingo;FURUHASHI Kenichi;KAIZU Yutaka;IMOU Kenji - 通讯作者:
IMOU Kenji
HASEGAWA Fumio的其他文献
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{{ truncateString('HASEGAWA Fumio', 18)}}的其他基金
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使用环保半导体:β-FeSi_2 的太阳能电池的研究
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Fabrication of single crystalline bulk GaN substrates using GaAs as seed crystals
使用 GaAs 作为晶种制造单晶体 GaN 衬底
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09555002 - 财政年份:1997
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09450121 - 财政年份:1997
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Preparation and properties of Hetero-junctions between PtSi or p-Si and p-Si/Ge strained superlattice
PtSi或p-Si与p-Si/Ge应变超晶格异质结的制备及性能
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04452168 - 财政年份:1992
- 资助金额:
$ 2.05万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
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