The Study on the Effect of Nonstoichiometry on Thermal Equilibrium Defects in Intermetallic Compounds by Positron Annihilation

正电子湮灭非化学计量对金属间化合物热平衡缺陷影响的研究

基本信息

  • 批准号:
    02452230
  • 负责人:
  • 金额:
    $ 3.78万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
  • 财政年份:
    1990
  • 资助国家:
    日本
  • 起止时间:
    1990 至 1991
  • 项目状态:
    已结题

项目摘要

The effect of nonstoichiometry on thermal equilibrium defects in intermetallic compounds was studied by positron annihilation. The measurements of positron annihilation were carried out by means of the positrdn lifetime spectroscopy, the Doppler broadening spectroscopy, the two dimensional angular correlation of annihilation radiations and the slow positron analysis. The following results were obtained :(1) Defects introduced by nonstoichiometry in TiAl and TiAl_3 :The positron annihilation characteristics were measured as a function of the alloy compositions of the above alloys in their one phase region. As a result, it was found that the concentration of vacancy-type defects introduced by the nonstoichiometric composition is quite lower than the detection limit of the positron annihilation technique. This result clearly shows that the extra alloy elements form the antisite defects. From the thermal equilibrium experiment performed by the use of ^<48>V positon source, which was for the first time developed in the present research program, a greater num ber of divacancies were introduced in these intermetallic compounds as compared with In pure metals.(2) Determination of three dimensional momentum space density of electrons in beta'-AgZn :By the measurements of 2D-ACAR spectra with different crystal orientations followed the image reconstruction technique, the three dimensional momentum space density of electrons in beta'-AgZn was determined. The experimentally determined density coincides well with the theoretically expected one. In this case, the extra alloy elements also occupy the antisite lalttice points.In addition, the determination of thd densities in NiAl, Ni_3Al and NbSe_2 was carried out successfully.
用正电子湮没方法研究了非化学计量比对金属间化合物热平衡缺陷的影响。用正电子寿命谱、多普勒展宽谱、湮没辐射的二维角关联和慢正电子分析等方法对正电子湮没进行了测量。(1)TiAl和TiAl_3中的非化学计量缺陷:在单相区测量了正电子湮没特性随合金成分的变化。结果发现,由非化学计量组成引入的空位型缺陷的浓度远低于正电子湮没技术的检测极限。这一结果清楚地表明,多余的合金元素形成反位缺陷。利用<48>本研究计划中首次研制的~(40)V正子源进行的热平衡实验表明,在这些金属间化合物中引入的双空位比纯In金属中的多。(2)β ′-AgZn中电子的三维动量空间密度的测定:通过测量不同晶向的二维ACAR谱,并结合图像重建技术,测定了β ′-AgZn中电子的三维动量空间密度。实验测定的密度与理论预期的密度吻合得很好。此外,还成功地测定了NiAl、Ni_3Al和NbSe_2的密度。

项目成果

期刊论文数量(47)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
上殿 明良,谷川 庄一郎: "表面・界面プロ-ブとしての低速陽電子" 表面技術. 41. 355-363 (1990)
Akira Kamidono、Shoichiro Tanikawa:“慢正电子作为表面/界面探针”表面技术 41. 355-363 (1990)。
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    0
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S.Tanigawa: "Present and future e^+ beams in Japan" Helvetica Physica Acta. 63. 385-391 (1990)
S.Tanikawa:“日本现在和未来的电子束” Helvetica Physica Acta。
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D. E. Bliss, W. Walukiewicz, J. W. Ager, E. E. Haller, K. T. Chan and S. Tanigawa: "Annealing studies of low temperature‐grown GaAs:Be" J. Appl. Phys.71. 1699-1707 (1992)
D. E. Bliss、W. Walukiewicz、J. W. Ager、E. E. Haller、K. T. Chan 和 S. Tanikawa:“低温生长 GaAs:Be 的退火研究”J. Appl. 1699-1707 (1992)。
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    0
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J.L.Lee,L.Wei,S.Tanigawa,T.Nakagawa,K.Ohta and S.Tanigawa: "The effect of point defects on the electrical activation of Si‐implanted GaAs during rapid thermal annealing" IEEE Trans.on Electron Devices. 39. 176-183 (1992)
J.L.Lee、L.Wei、S.Tanikawa、T.Nakakawa、K.Ohta 和 S.Tanikawa:“快速热退火过程中点缺陷对硅注入 GaAs 电激活的影响”IEEE Trans.on Electron Devices。 39. 176-183 (1992)
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    0
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T.Kurihara,S.Tanigawa: "The anomalous temperature dependeuce of positron annihilation in dilute AlーZn alloy near the melting point" phys.stat.sol.(a). 117. K9-K13 (1990)
T.Kurihara,S.Tanikawa:“稀铝锌合金在熔点附近的正电子湮灭的反常温度依赖性”phys.stat.sol.(a) 117. K9-K13 (1990)。
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TANIGAWA Shoichiro其他文献

TANIGAWA Shoichiro的其他文献

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{{ truncateString('TANIGAWA Shoichiro', 18)}}的其他基金

The precise determination of the concentrations of defects at thermal equilibrium in Si and Ge by means of simultaneous measurements of positron annihilation and positron diffusion characteristics
通过同时测量正电子湮灭和正电子扩散特性精确测定Si和Ge热平衡时的缺陷浓度
  • 批准号:
    09450005
  • 财政年份:
    1997
  • 资助金额:
    $ 3.78万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
The Development of a Reflection High Energy Positron Diffraction (RHEPD) Spectrometer
反射高能正电子衍射(RHEPD)光谱仪的研制
  • 批准号:
    03555004
  • 财政年份:
    1991
  • 资助金额:
    $ 3.78万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
The Development of a Prototype Transmission Positron Microscope
原型透射正电子显微镜的研制
  • 批准号:
    63850011
  • 财政年份:
    1988
  • 资助金额:
    $ 3.78万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research
Study of Electronic Structures near Lattice Defects in Metals by the Measuretment of Electron Momentum Distributions
通过测量电子动量分布研究金属晶格缺陷附近的电子结构
  • 批准号:
    61460197
  • 财政年份:
    1986
  • 资助金额:
    $ 3.78万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)

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    21K18812
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    19K04997
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便携式正电子湮灭寿命谱仪研制及其原位应用
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