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The Development of a Reflection High Energy Positron Diffraction (RHEPD) Spectrometer

The Development of a Reflection High Energy Positron Diffraction (RHEPD) Spectrometer
反射高能正电子衍射(RHEPD)光谱仪的研制
批准号:
03555004
负责人:
TANIGAWA Shoichiro
金额:
$10.37万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
财政年份:
1991
资助国家:
日本
项目状态:
已结题
起止时间:
1991 至 1992

项目摘要

项目成果

TANIGAWA Shoichiro的其他基金

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相关文献

中文摘要
翻译
反射高能电子衍射(RHEED)技术作为一种表面分析技术,已被成功应用。在本项目中,研究者旨在首次开发反射高能正电子衍射(RHEPD)技术。与RHEED相比,RHEPD在以下几个方面具有优势:低多重散射,无交换相互作用,内电位几乎为零等特点。本项目在世界上首次试制了反射高能正电子衍射仪。1991财年完成了衍射仪真空系统的安装、单能正电子束流的亮度增强、正电子加速至50kev等工作。1992年6月,成功地进行了超高真空系统的运行,研制出了一种由W薄膜和a硅片组成的新型高效正电子减速剂。本文开发了一种用于RHEPD图形二维图像数据采集的计算机程序。因此,实时积累二维数据成为可能。作为RHEPD实验的第一个目标,我们选择了se涂层的GaAs(100)表面。目前,在550℃加热后观察到2 × 1结构。高统计的RHEPD数据正在积累中。经过两年的研究,为研制REPD光谱仪奠定了基础。
英文摘要
As a surface analysis technique, a Reflection High Energy Electron Diffraction (RHEED) technique has been successfully used. In the present project, the investigator aimed to develop a Reflection High Energy Positron Diffraction (RHEPD) technique for the first time. As compared with RHEED, RHEPD is superior in the following points; low multiple scattering, no exchange interaction, nearly zero inner potential and so on.In this project, the investigator manufactured trially a Reflection High Energy Positron Diffractometer for the first time in the world. In FY1991, the installation of vacuum systems for the diffractometer, the brightness enhancement of the monoenergetic positron beam, the acceleration of positrons up to 50 keV and so on have been completed. In FYI1992, the operation of ultra high vacuum systems was successfully conducted and a new and high efficient positron moderator composed of a W film and A Si wafer has been developed. The computer program for the data aquisition of two dimensional images of RHEPD patterns has been developed. As a result, the accumulation of two dimensional data in real time has been possible. As the first target of the RHEPD experiment, we selected the Se-coated GaAs(100) surface. At present, the 2 X 1 structure was observed after heating at 550゚C. The high statistic RHEPD data are now being accumulated. During the two years research , the basis for the REPD spectrometer has been constructed.
期刊论文(25)
专著(0)
科研奖励(0)
会议论文
J. L. Lee, L. Wei, S. Tanigawa, H. Oigawa and Y Nannicni: "Effect of (NH_4)^s_ treatment on the passivation of GaP surface" J. Appl. Phys.70. 2877-2879 (1991)
J. L. Lee、L. Wei、S. Tanikawa、H. Oikawa 和 Y Nannicni:“(NH_4)^s_ 处理对 GaP 表面钝化的影响”J. Appl。
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通讯作者:
S.Shikata,S.Fujii,L.Wei and S.Tanigawa: "Effect of annealing method on vacancy-type defects in Si^+-implanted GaAs studied by a slow positron beam" Jpn.J.Appl.Phys.31. 732-736 (1992)
S.Shikata、S.Fujii、L.Wei 和 S.Tanikawa:“通过慢正电子束研究退火方法对 Si^ 注入 GaAs 中空位型缺陷的影响”Jpn.J.Appl.Phys.31。
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上殿 明良,谷川 庄一郎: "ポジトロン消滅と材料の解析" 表面. 30. 588-597 (1992)
Akira Kamidono、Shoichiro Tanikawa:“正电子湮灭和材料分析”表面 30. 588-597 (1992)。
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谷川 庄一郎: "陽電子スペクトル-陽電子オージェ分光、陽電子イオン化質量分析" Radioisotopes. 42. 120-130 (1993)
Shoichiro Tanikawa:“正电子谱 - 正电子俄歇光谱、正电子电离质谱”放射性同位素。
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共 19 条
    The precise determination of the concentrations of defects at thermal equilibrium in Si and Ge by means of simultaneous measurements of positron annihilation and positron diffusion characteristics
    • 批准号:
      09450005
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $7.81万
    • 财政年份:
      1997
    • 负责人:
      TANIGAWA Shoichiro
    • 依托单位:
    The Study on the Effect of Nonstoichiometry on Thermal Equilibrium Defects in Intermetallic Compounds by Positron Annihilation
    • 批准号:
      02452230
    • 项目类别:
      Grant-in-Aid for General Scientific Research (B)
    • 资助金额:
      $3.78万
    • 财政年份:
      1990
    • 负责人:
      TANIGAWA Shoichiro
    • 依托单位:
    The Development of a Prototype Transmission Positron Microscope
    • 批准号:
      63850011
    • 项目类别:
      Grant-in-Aid for Developmental Scientific Research
    • 资助金额:
      $16.64万
    • 财政年份:
      1988
    • 负责人:
      TANIGAWA Shoichiro
    • 依托单位:
    Study of Electronic Structures near Lattice Defects in Metals by the Measuretment of Electron Momentum Distributions
    • 批准号:
      61460197
    • 项目类别:
      Grant-in-Aid for General Scientific Research (B)
    • 资助金额:
      $4.22万
    • 财政年份:
      1986
    • 负责人:
      TANIGAWA Shoichiro
    • 依托单位:
    国内基金
    海外基金
    基于RHEED的LaCoO3薄膜微结构可控制备及其电催化性能依赖关系研究
    • 批准号:
      21801090
    • 项目类别:
      青年科学基金项目
    • 资助金额:
      24.0万元
    • 批准年份:
      2018
    • 负责人:
      吴小峰
    • 依托单位: