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The Development of a Reflection High Energy Positron Diffraction (RHEPD) Spectrometer

反射高能正电子衍射（RHEPD）光谱仪的研制

基本信息

批准号：
03555004
负责人：
TANIGAWA Shoichiro
金额：
$ 10.37万
依托单位：
University of Tsukuba
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-03555004/
关键词：
RHEPD RHEED Surface Analysis Positron-Solid Interaction

项目摘要

As a surface analysis technique, a Reflection High Energy Electron Diffraction (RHEED) technique has been successfully used. In the present project, the investigator aimed to develop a Reflection High Energy Positron Diffraction (RHEPD) technique for the first time. As compared with RHEED, RHEPD is superior in the following points; low multiple scattering, no exchange interaction, nearly zero inner potential and so on.In this project, the investigator manufactured trially a Reflection High Energy Positron Diffractometer for the first time in the world. In FY1991, the installation of vacuum systems for the diffractometer, the brightness enhancement of the monoenergetic positron beam, the acceleration of positrons up to 50 keV and so on have been completed. In FYI1992, the operation of ultra high vacuum systems was successfully conducted and a new and high efficient positron moderator composed of a W film and A Si wafer has been developed. The computer program for the data aquisition of two dimensional images of RHEPD patterns has been developed. As a result, the accumulation of two dimensional data in real time has been possible. As the first target of the RHEPD experiment, we selected the Se-coated GaAs(100) surface. At present, the 2 X 1 structure was observed after heating at 550ﾟC. The high statistic RHEPD data are now being accumulated. During the two years research , the basis for the REPD spectrometer has been constructed.

作为一种表面分析技术，反射高能电子衍射（RHEED）技术已被成功地使用。在本项目中，研究人员旨在首次开发反射高能正电子衍射（RHEPD）技术。与RHEED相比，RHEPD具有多重散射低、无交换作用、内电势接近于零等上级优点，在本项目中，研究者在国际上首次试制了反射式高能正电子衍射仪。在1991财政年度，完成了衍射仪真空系统的安装、单能正电子束的亮度增强、正电子加速到50 keV等工作。在1992财政年度，超高真空系统的运行获得成功，并开发了一种由W膜和非晶硅晶片组成的新型高效正电子慢化剂。研制了RHEPD二维图象数据采集的计算机程序。结果，二维数据在真实的时间中的积累已经成为可能。作为RHEPD实验的第一个目标，我们选择了Se涂覆的GaAs（100）表面。目前，在550 ℃加热后观察到2 X 1结构。高统计RHEPD数据正在积累中。经过两年的研究，为REPD谱仪的研制奠定了基础。