Determination of surface electronic states of solids in solution by means of charge transfer reaction inverse photoemission spectroscopy (CTRIPS).
Determination of surface electronic states of solids in solution by means of charge transfer reaction inverse photoemission spectroscopy (CTRIPS).
批准号:
02453001
负责人:
UOSAKI Kohei
金额:
$3.65万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1990
资助国家:
日本
项目状态:
已结题
起止时间:
1990 至 1991
中文摘要
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英文摘要
The details of the photon emission at metal/electrolyte interfaces induced by an electron transfer reaction was investigated by employing two experimental procedures.In the first method, the measurements were carried out in solutions containing some redox species. The potential was stepped to a negative potential, U_i. where the redox species is converted to as anion radical, and then to various positive potentials, U_f, where the anion radical is oxidized. The effects of electrode metals (Au, Pt and Pd) and redox species (benzonitrile. tstilbene and benzophenone) on emission properties were studied. The high energy threshold of the spectrum, E_<th>, changes linearly with the electrode potential, U_f, and is almost equal to -e (U゚-U_f) where U゚is the redox potential of the chemical species. The peak position of the spectrum, E_p, also depends though less sensitively on U_f and U゚. Although E_<th> is solely determined by U_f and U゚, E_p has metal dependence. Emission efficiency. PHI, in … More creases, saturates and then decreases as U_f becomes more positive. The potential dependence of PHI also depends on the choice of metal. Based on these results, several possible mechanisms for the photon emission are considered and it is concluded that the major contribution to the photon emission is the charge transfer reaction inverse photoemission (CTRIP) process involving bulk band states.In the second method, solvated electrons were used as electron injecting spesies and the electrode potential was kept constant. The efficiency of emitted light increases drastically as the electrode potential becomes positive. The high energy threshold of the spectrum also increases as the electrode potential becomes positive by 1 eV/V. The peak energy also shifts positively as the electrode potential becomes positive, although the degree of the shift is much smaller. Various processes are considered as a possible mechanism for a photon emission. From the qualitative comparison of the results at plantinum and gold electrode, the contribution of the inverse photoemission process to thebulk band states at the light emission process in the electrochemical system is suggested. The feasibility of applying this phenomenon to a novel spectroscopy is discussed. Information on electronic states of solvated electrons was also obtained. Less
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Kohei Uosaki: "Photon Emission via Surface State at GoldーAcetonitrile Solution Interface" The Journal of Physical Chemistry. 95. 779-783 (1991)
Kohei Uosaki:“金-乙腈溶液界面处的表面态光子发射”物理化学杂志 95. 779-783 (1991)。
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通讯作者:
K. Murakoshi: "Photon Emission at Metal/Solution Interface Induced by Electron Injection from Solvated Electron." J. Vac. Sci. Tech. A,. 10. (1992)
K. Murakoshi:“溶剂化电子的电子注入引起金属/溶液界面处的光子发射。”
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Per Carlsson: "STM Characteristics of nーGaAs and pーGaP in Electrolyte Solution" Journal of Electroanalytical Chemistry. 283. 425-433 (1990)
Per Carlsson:“电解质溶液中 n-GaAs 和 p-GaP 的 STM 特性”《电分析化学杂志》283. 425-433 (1990)。
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K.Murakoshi: "Photon Emission at Metal/Acetonitrile Solution Interface.Effect of Redox Species and Electrode Metals" J.Phys.Chem.96. (1992)
K.Murakoshi:“金属/乙腈溶液界面处的光子发射。氧化还原物质和电极金属的影响”J.Phys.Chem.96。
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作者:
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通讯作者:
K.Murakoshi: "Photon Emission at Metal/Solution Interface Induced by Electron Injection from Solvated Electron" J.Vac.Sci.Tech.A.10. (1992)
K.Murakoshi:“溶剂化电子的电子注入引起金属/溶液界面处的光子发射”J.Vac.Sci.Tech.A.10。
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共 16 条
Demonstration of Electrochemical X-ray Photoelectron Spectroscopy Utilizing Hard X-ray from a Synchrotron Source
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批准号:23655022
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.58万
-
财政年份:2011
-
负责人:UOSAKI Kohei
-
依托单位:
Morphological, Electronic, and Molecular Structures and Electron Transfer Characteristics at Metal/Molecule and Semiconductor/Molecule Interfaces
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批准号:18205016
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$32.2万
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财政年份:2006
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负责人:UOSAKI Kohei
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依托单位:
Real Time Monitoring of Electron Transfer Dynamics at Solid/liquid Interfaces by Non-linear Spectroscopy
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批准号:16072202
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$33.66万
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财政年份:2004
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负责人:UOSAKI Kohei
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依托单位:
Dynamic Monitoring of Molecular Structure at Solid/Liquid Interfaces
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批准号:13304047
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$32.36万
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财政年份:2001
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负责人:UOSAKI Kohei
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依托单位:
Construction Method for Super Lattice Structure by Electreochemical Atomic Layer Epitaxy
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批准号:13554026
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.38万
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财政年份:2001
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负责人:UOSAKI Kohei
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依托单位:
Structure and Dynamics at Solid/Solution Interphase
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批准号:11694047
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项目类别:Grant-in-Aid for Scientific Research (A).
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资助金额:$6.14万
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财政年份:1999
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负责人:UOSAKI Kohei
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依托单位:
Structure and Dynamics at Solid/Solution Interphase
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批准号:09044045
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$5.95万
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财政年份:1997
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负责人:UOSAKI Kohei
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依托单位:
Electrochemistry of Ordered Interfaces
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批准号:09237102
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$67.78万
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财政年份:1997
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负责人:UOSAKI Kohei
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依托单位:
Self-Assembled Molecular Layrs with Biological Functions -Constructions and Characterization-
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批准号:07044046
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$4.22万
-
财政年份:1995
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负责人:UOSAKI Kohei
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依托单位:
Development of Monitoring System of Electrochemical Reaction by Using Surface Plasm on Resonance
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批准号:07555266
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$8.9万
-
财政年份:1995
-
负责人:UOSAKI Kohei
-
依托单位:
Development of in-situ analysis system for molecular layrs on solid surface solution.
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批准号:04555191
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$9.54万
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财政年份:1992
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负责人:UOSAKI Kohei
-
依托单位:
Spectroscopic Investigation of Electrode Surfaces Prepared by Self-Assembling Method
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批准号:03045011
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项目类别:Grant-in-Aid for international Scientific Research
-
资助金额:$3.46万
-
财政年份:1991
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负责人:UOSAKI Kohei
-
依托单位:
Observation and Manipulation of Semiconductor Surface Microstructure in Solution
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批准号:01044005
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$3.84万
-
财政年份:1989
-
负责人:UOSAKI Kohei
-
依托单位: