Construction Method for Super Lattice Structure by Electreochemical Atomic Layer Epitaxy
电化学原子层外延构建超晶格结构的方法
基本信息
- 批准号:13554026
- 负责人:
- 金额:$ 8.38万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:2001
- 资助国家:日本
- 起止时间:2001 至 2003
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
1. To clarify the mechanism of electrochemical atomic layer epitaxy (ECACE) and the characteristics of the ECALE layer, electrodeposition of Pd on Au(111) or Au(100) electrode was followed by electrochemical transient method and second harmonic generation.2. CdTe was epitaxially grown on Si(111) by photoassisted-electrodeposition.3. Electrochemical growths of metals such as Au, Pt and Pd, were monitored by in situ atomic force microscopy.4. ECALE of CdS was achieved by growing Cd and S alternately. It was then dissolved by irradiation of polarized light in oxygen-safurated water to form a stripe structure.5. By dipping Au or ITO substrate into solutions containing Gold nanoclusters protected by thiol SAMs with methyl, carboxylate, or ferrocen terminal group, and polelectrolytes alternately, multi-layers of electroactive gold nanoclusters were constructed. Similarly, multi-layers of CdS nanoclusters prepared by reversed-micelle technique were constructed. In both cases, all nanoclusters in the multilayers were electroactive.6. Electrochemical molecular epitaxy of multi-nuclear metal complex was achieved.
1.为了阐明电化学原子层外延(ECACE)的机理和ECALE层的特性,采用电化学瞬态法和二次谐波法对Pd在Au(111)或Au(100)电极上的电沉积过程进行了跟踪研究.采用光辅助电沉积法在Si(111)衬底上外延生长了CdTe薄膜。利用原子力显微镜原位监测了Au、Pt和Pd等金属的电化学生长. CdS的ECALE是通过Cd和S交替生长实现的。然后用偏振光照射溶解在含氧的水中,形成条状结构.通过将Au或ITO基底交替浸渍到含有由具有甲基、羧酸酯或二茂铁端基的硫醇自组装膜保护的金纳米团簇和聚电解质的溶液中,构建了多层电活性金纳米团簇。同样,通过反胶束技术制备了多层CdS纳米团簇。在这两种情况下,多层膜中的所有纳米团簇都是电活性的。实现了多核金属配合物的电化学分子外延。
项目成果
期刊论文数量(116)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
W.Song et al.: "Construction and Electrochemical Characteristics of Multilayer Assemblies of A Nanoclusters Protected by Mixed Self-assembled Monolayers on Tin-doped Indium Oxide"PCCP. 5. 5279-5284 (2003)
W.Song 等人:“锡掺杂氧化铟上混合自组装单层保护纳米团簇的多层组件的构建和电化学特性”PCCP。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
K.Uosaki et al.: "Photophysical and Photoelectrochemical Characteristics of Multilayers of CdS Nanoclusters"Faraday Discuss. 125. 39-53 (2004)
K.Uosaki 等人:“CdS 纳米团簇多层的光物理和光电化学特性”法拉第讨论。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
M.Takahashi et al.: "Heteroepitaxial Growth of CdTe on p-Si(111) Substrate by Pulsed-light-assisted Electrodeposition"Appl.Phys.Lett.. 80,No.12. 2117-2119 (2002)
M.Takahashi 等人:“通过脉冲光辅助电沉积在 p-Si(111) 基板上异质外延生长 CdTe”Appl.Phys.Lett.. 80,No.12。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
魚崎浩平: "ナノテクノロジーハンドブックI編 創る(第1分冊)"オーム社. 375 (2003)
Kohei Uozaki:“纳米技术手册第一卷:创造(第一卷)”Ohmsha。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Tadashi Awatani et al.: "Second Harmonic Generation Study on Electrochemical Deposition of Palladium on a Polycrystalline Gold Electrode"Journal of Electroanalytical Chemistry. (in press).
Tadashi Awatani 等人:“多晶金电极上钯电化学沉积的二次谐波产生研究”电分析化学杂志。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
UOSAKI Kohei其他文献
UOSAKI Kohei的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('UOSAKI Kohei', 18)}}的其他基金
Demonstration of Electrochemical X-ray Photoelectron Spectroscopy Utilizing Hard X-ray from a Synchrotron Source
利用同步加速器源的硬 X 射线进行电化学 X 射线光电子能谱演示
- 批准号:
23655022 - 财政年份:2011
- 资助金额:
$ 8.38万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Morphological, Electronic, and Molecular Structures and Electron Transfer Characteristics at Metal/Molecule and Semiconductor/Molecule Interfaces
金属/分子和半导体/分子界面的形态、电子和分子结构以及电子转移特性
- 批准号:
18205016 - 财政年份:2006
- 资助金额:
$ 8.38万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Real Time Monitoring of Electron Transfer Dynamics at Solid/liquid Interfaces by Non-linear Spectroscopy
通过非线性光谱实时监测固/液界面的电子传递动力学
- 批准号:
16072202 - 财政年份:2004
- 资助金额:
$ 8.38万 - 项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
Dynamic Monitoring of Molecular Structure at Solid/Liquid Interfaces
固/液界面分子结构的动态监测
- 批准号:
13304047 - 财政年份:2001
- 资助金额:
$ 8.38万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Structure and Dynamics at Solid/Solution Interphase
固体/溶液界面的结构和动力学
- 批准号:
11694047 - 财政年份:1999
- 资助金额:
$ 8.38万 - 项目类别:
Grant-in-Aid for Scientific Research (A).
Structure and Dynamics at Solid/Solution Interphase
固体/溶液界面的结构和动力学
- 批准号:
09044045 - 财政年份:1997
- 资助金额:
$ 8.38万 - 项目类别:
Grant-in-Aid for international Scientific Research
Electrochemistry of Ordered Interfaces
有序界面的电化学
- 批准号:
09237102 - 财政年份:1997
- 资助金额:
$ 8.38万 - 项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
Self-Assembled Molecular Layrs with Biological Functions -Constructions and Characterization-
具有生物功能的自组装分子层-结构和表征-
- 批准号:
07044046 - 财政年份:1995
- 资助金额:
$ 8.38万 - 项目类别:
Grant-in-Aid for international Scientific Research
Development of Monitoring System of Electrochemical Reaction by Using Surface Plasm on Resonance
表面等离子体共振电化学反应监测系统的研制
- 批准号:
07555266 - 财政年份:1995
- 资助金额:
$ 8.38万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Development of in-situ analysis system for molecular layrs on solid surface solution.
固体表面溶液分子层原位分析系统的开发。
- 批准号:
04555191 - 财政年份:1992
- 资助金额:
$ 8.38万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
相似海外基金
Three-dimensional distribution control of nitrogen atoms in dilute nitride films using atomic layer epitaxy
利用原子层外延控制稀氮化物薄膜中氮原子的三维分布
- 批准号:
20K05346 - 财政年份:2020
- 资助金额:
$ 8.38万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Controlling N distribution in dilute nitride semiconductor materials by atomic layer epitaxy
通过原子层外延控制稀氮化物半导体材料中的N分布
- 批准号:
16K17515 - 财政年份:2016
- 资助金额:
$ 8.38万 - 项目类别:
Grant-in-Aid for Young Scientists (B)
Effect of Temperature on the Electrochemical Atomic Layer Epitaxy of Cadmium Telluride
温度对碲化镉电化学原子层外延的影响
- 批准号:
496378-2016 - 财政年份:2016
- 资助金额:
$ 8.38万 - 项目类别:
Alexander Graham Bell Canada Graduate Scholarships - Master's
Development of novel attosecond oxide multilayer mirrors at soft X-ray wavelengths fabricated by atomic layer epitaxy
开发原子层外延制造的软X射线波长新型阿秒氧化物多层镜
- 批准号:
23560041 - 财政年份:2011
- 资助金额:
$ 8.38万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Research on hetero-structure growth by a supersonic source beams and an atomic layer epitaxy.
超声源束和原子层外延异质结构生长研究。
- 批准号:
14350012 - 财政年份:2002
- 资助金额:
$ 8.38万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Atomic Layer Epitaxy of Conducting Oxides and Heterostructures
导电氧化物和异质结构的原子层外延
- 批准号:
0201767 - 财政年份:2002
- 资助金额:
$ 8.38万 - 项目类别:
Continuing Grant
US-Turkey Cooperative Research: Growth of Thin Film Materials by Electrochemical Atomic Layer Epitaxy
美土合作研究:电化学原子层外延生长薄膜材料
- 批准号:
0114624 - 财政年份:2001
- 资助金额:
$ 8.38万 - 项目类别:
Continuing Grant
Surface Chemistry Studies During Thin-Film Growth Using Electrochemical Atomic Layer Epitaxy (EC-ALE)
使用电化学原子层外延 (EC-ALE) 进行薄膜生长过程中的表面化学研究
- 批准号:
0075868 - 财政年份:2000
- 资助金额:
$ 8.38万 - 项目类别:
Continuing Grant
Atomic Layer Epitaxy of Superconducting Oxides and Heterostructures
超导氧化物和异质结构的原子层外延
- 批准号:
9807042 - 财政年份:1998
- 资助金额:
$ 8.38万 - 项目类别:
Continuing Grant
State-Resolved Dynamics in Atomic-Layer Epitaxy (ALE) and Laser-ALE of III-V Compound Semiconductors
III-V 化合物半导体原子层外延 (ALE) 和激光 ALE 中的状态分辨动力学
- 批准号:
9796211 - 财政年份:1997
- 资助金额:
$ 8.38万 - 项目类别:
Continuing Grant














{{item.name}}会员




