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Fundamental research on low energy electron beam assisted selective etching and deposition for submicron LSI fabrication

低能电子束辅助选择性刻蚀和亚微米LSI沉积沉积基础研究

基本信息

批准号：
03452181
负责人：
FUJIOKA Hiromu
金额：
$ 2.11万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-03452181/
关键词：
Electron beam assisted selective etching Electron beam assisted selective deposition Large scale integrated circuit Secondary electron Specimen current 電子ビ-ム支援エッチング

项目摘要

1. The specimen chamber in a conventional scanning electron microscope (SEM) was modified to direct gas onto the specimen surface through a gas injection nozzle which had a 0.2 mm diameter. The gas supply system was attached to the SEM specimen chamber.2. Electron beam assisted selective etching of SiO_2 by using XeF_2 gas: (1) Experimental results showed that the etching end point could be determined from either the specimen current or the secondary electron current monitored during the electron beam irradiation. (2) The etch rate were higher at lower primary electron energies, lower specimen temperatures, larger gas flow rates and larger electron beam currents. (3) The etched hole diameters at the etching end point are found to be nearly equal to the tail diameters of the beam profiles. (4) A groove with the high aspect ratio of ten was formed in 2mum thick SiO_2 by using an electron beam probe with an energy of 15 keV, a current of 50 pA and a tail diameter-of 0.15mum.3. Electron beam assisted selective deposition on SiO_2 by using Fe(CO)_5 gas: (1) The deposition rate were higher at lower primary electron energies, lower specimen temperatures, larger gas flow rates and larger electron beam currents. (2) The resistivity was estimated from the measurement of resistance between two Al metal lines which were connected by Fe deposition. The result showed a resistivity of more than six orders of magnitude more than bulk Fe. The cause could be due to the oxide of Al surface.

1.对常规扫描电子显微镜(SEM)中的试件腔进行了改装，使其可以通过直径0.2 mm的气体喷嘴将气体引导到试件表面。将供气系统连接到扫描电子显微镜标本室。电子束辅助XeF_2气体选择性刻蚀SiO_2：(1)实验结果表明，刻蚀终点可以由电子束辐照过程中监测到的样品电流或二次电子电流来确定。(2)一次电子能量越低，样品温度越低，气体流量越大，电子束电流越大，刻蚀速率越高。(3)刻蚀端点处的刻蚀孔直径与束流轮廓的尾部直径基本相等。(4)利用能量为15keV、电流为50pA、尾径为0.15微米的电子束探头，在2微米厚的SiO_2中形成了高深宽比为10的凹槽。用Fe(CO)5气体在SiO_2上进行电子束辅助选择沉积：(1)在较低的一次电子能量、较低的样品温度、较大的气体流量和较大的电子束电流下，沉积速率较高。(2)通过测量两条通过Fe沉积连接的铝金属线之间的电阻来估算其电阻率。结果表明，其电阻率比块体Fe高6个数量级以上。这可能是由于铝表面的氧化作用造成的。