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Generation of high-brightness electron beams with microfabricated field-emitter arrays

利用微加工场发射器阵列产生高亮度电子束

基本信息

批准号：
05452385
负责人：
ISHIZUKA Hiroshi
金额：
$ 4.35万
依托单位：
Fukuoka Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1994
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05452385/
关键词：
electron beam microbeam field-emitter array emittance brightness free-electron laser electron gun microtriode

项目摘要

Electron beams were extracted from microfabricated field-emitter arrays (FEA), accelarated up to 6 keV,and propagated over a distance of 1 m. Emittances of both the beam and beamlets were measured. The research concerned the following subjects :1. Study of FEA performance : Characteristics of FEAs (the Spindt cathodes and microtriode arrays) were investigated. The current density on the cathode surface reached 40 A/cm^2 in 1 s regime. Microtriode arrays demonstrated the generation of parallel beam.2. Stabilization and active control of emission current : A field effect transistor, introduced in series with the base of FEA,successfully stabilized and controlled the emission current.3. Long range propagation of the beam : Electron beams extracted from the Spindt cathodea were propagated over 1 m and projected on a fluorescent screen. There a magnified image of the FEA was formed and separate images ofthe tips were observed saparately.4. Emittance measurement : An electrostatic quadrupole lens was utilized to measure the emittance by elongating the image on the screen. Normalized emittances of the order of 10^<-7> m-rad and 2 x 10^<-9> m-rad were obtained for beams from high-current-density model Spindt cathodes and a beamlet therefrom, respectively.5. Beam brightness : FEAs were damaged when the current density exceeded 40 A/cm^2 even in the pulsed mode. For this reason, the effort to increase the beam brightness has been suspended.6. Improvement of FEAs : Collimated beams generated by microtriode arrays suffered from severe deflection due to stray electric fields at the exit. New FEAs, axi-symmetric in electrode configuration, are now being fabricated by our collaborators.

电子束从微加工场发射阵列（FEA）中提取，加速到6 keV，并传播超过1米的距离。测量了光束和细光束的发射率。本研究主要涉及以下几个方面：1. FEA性能研究：研究了FEA（Spindt阴极和微阵列）的特性。阴极表面的电流密度在1 s范围内达到40 A/cm ^2。微阵列显示了平行光束的产生.发射电流的稳定和主动控制：场效应晶体管，引入串联与FEA的基础，成功地稳定和控制发射电流.电子束的远距离传播：从Spindt阴极引出的电子束传播超过1米，并投射到荧光屏上。形成FEA的放大图像，并分别观察头端的单独图像。发射率测量：利用静电四极透镜通过拉长屏幕上的图像来测量发射率。对于<-7><-9>来自高电流密度模型Spindt阴极的射束和来自其的小射束，分别获得10 μ m-rad和2 X 10 μ m-rad量级的归一化发射度。光束亮度：即使在脉冲模式下，当电流密度超过40 A/cm^2时，FEA也会损坏。由于这个原因，增加光束亮度的努力已经暂停。改进的FEAs：准直光束产生的微阵列遭受严重偏转，由于在出口处的杂散电场。新的FEAs，轴对称的电极配置，现在正在制造我们的合作者。