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Development of photo-detectable and light-emitable negative-resistance switching

光检测和发光负阻开关的发展

基本信息

批准号：
05650333
负责人：
YAMAMOTO Tatsuo
金额：
$ 1.54万
依托单位：
Ishinomaki Senshu University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1995
项目状态：
已结题

项目摘要

New type switching device was fabricated. This device has thyristor-like property and is optically triggered and emits light in on-state. It consists of aluminum electrode-silicon nitride thin film- (n) GaAs- (p^+) GaAs structure. The thickness of n-type GaAs epi-layr was in range from 3 to 20mum, and the carrier concentration was about 1x10^<16>cm^<-3>. The silicon nitride layr, that has thickness of about 6nm, was deposited as tunneling layr. The switching voltage and current were about 15-25V and 0.5-2mA,respectively. The minimum voltage in on-state was about 6V.The switching voltage was determined by a point that surface depletion layr reaches to p^+ region.The relationship between applied voltage (V) and current (I) and intensity of light emission (L) of the device was studied. We found that the slopes of log (L) versus log (I) have higher values than unity only in the negative-resistance region. Also, the emission property in spectrum reveals a different behavior only in negative resistance region It seems to be concerned with an increase of electron density of neutral n-type region and an increase of accelerated carrier of surface high field region in case where the device is in negative-resistance region.The optically triggered switching behavior and light emission were realized in pulse experiment Optical input leads for the switching device to change from off-state to on-state and gives rise to emit light output. Since the device emits light in only case that the light pulse synchronized the applied voltage pulse, this device is applicable to light frequency converter and to devices for optical logic. This switching device can perform the multiple tasks of optical transduction and thresholding and of electrical switching and of light emission.

研制了一种新型开关器件。该器件具有类似三极管的特性，并且在开启状态下被光学触发并发光。它由铝电极-氮化硅薄膜-（n）GaAs-（p^+）GaAs结构组成。n型GaAs外延层的厚度在3 ~ 20 μ m范围内，载流子浓度约为1 × 10 ~（13）<16>cm ~ 3<-3>。氮化硅层厚度约为6 nm，作为隧道层。开关电压为15- 25 V，电流为0.5- 2 mA。器件的最小通态电压约为6V，开关电压由表面耗尽层到达p^+区的一个点决定，研究了外加电压（V）、电流（I）与器件发光强度（L）的关系。我们发现log（L）对log（I）的斜率仅在负电阻区域中具有高于1的值。还有，发射谱的性质只在负阻区有不同的表现，这似乎与器件处于负阻区时，中性n型区电子密度的增加和表面高场区加速载流子的增加有关。在脉冲实验中实现了光触发开关行为和光发射。从关断状态变为导通状态并产生发光输出。由于该器件仅在光脉冲与所施加的电压脉冲同步的情况下才发光，因此该器件可应用于光频率转换器和光学逻辑器件。该开关装置可以执行光学转换和阈值化以及电开关和光发射的多个任务。