权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

A Study on Elementary Process of Self-limited Surface Adsorption and Reaction Si Atomic Layr Etching

自限表面吸附反应硅原子层刻蚀基本过程的研究

基本信息

批准号：
06452211
负责人：
MATSUURA Takashi
金额：
$ 4.67万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

项目摘要

The purpose of this study is to clarify the basic process of atomic layr etching of Si, ie., self-limited adsorption of reactant atoms on the Si surface and etching reaction of the surface induced by the low energy ion irradiation. In this fiscal year, as the last research year of this 2 year project, research has been extended from self-limited atomic-layr-etching of Si to that of Ge and to application of low energy ECR chlorine plasma to ultrasmall MOS gate fabrication.Atomic layr etching of Si (100), (111), (110), and(211)has been investigated by alternated chlorine adsorption and low energy Ar^+ ion irradiation using an ultraclean ECR apparatus. It is found that the etch rate per cycle in saturation when chlorine radicals are supplied is twice as high as that when only molecules are supplied. Also it is expressed by a well-regulated fractional number of the atomic layr thickness for each substrate orientation. Moreover, the saturated etch rate is in a simple relation to the surface bond structure and the adsorption site of each substrate orientation. Not only on the molecular chlorine adsorbed surface but also on the chlorine radical adsorbed surface during atomic-layr-etching, XPS measurements showed the absence of Si^<2+> and Si^<3+>and the -1 atomic layr adsorption of chlorine. In these atomic-layr etching of Si, etching depth depends on the amount of the chlorine adsorption. In the case of Ge, etching characteristics showed dependence on the amount of the low energy Ar^+ ion irradiation. This remarkable result demonstrates difference of kinetic constant of adsorption and reaction. Also, highly selective directional gate etching of ultrasmall MOSFET's with a 0.1 micron feature size have been fabricated by low energy ECR chlorine plasmas.The success of this project supplies a key to understand more deeply the atomic layr etching process and we summarized this project.

本研究的目的是阐明硅原子层刻蚀的基本过程，即。低能离子辐照下，反应物质原子在硅表面的自限吸附和表面的蚀刻反应。本财年作为该2年项目的最后一个研究年度，研究从Si的自限原子层刻蚀扩展到Ge的自限原子层刻蚀，以及低能ECR氯等离子体在超小型MOS栅极制造中的应用。利用超净ECR装置，用氯交替吸附和低能氩离子辐照研究了Si（100）、（111）、（110）和（211）的原子层刻蚀。在饱和状态下，有氯自由基的腐蚀速率是只提供分子时的两倍。此外，它是由每个衬底取向的原子层厚度的良好调节分数表示的。此外，饱和蚀刻速率与表面键结构和各基体取向的吸附位置有简单的关系。在原子层刻蚀过程中，不仅在分子氯的吸附表面，而且在氯自由基的吸附表面，XPS测量表明没有Si^<2+>和Si^<3+>，也没有-1原子层对氯的吸附。在这些原子层蚀刻的Si中，蚀刻深度取决于氯的吸附量。在Ge的情况下，蚀刻特性与低能Ar^+离子辐照量有关。这一显著结果说明了吸附动力学常数与反应动力学常数的差异。此外，利用低能ECR氯等离子体制备了具有0.1微米特征尺寸的超小型MOSFET的高选择性定向栅极刻蚀。本课题的成功为更深入地了解原子层刻蚀工艺提供了一把钥匙，并对本课题进行了总结。