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A Development of Atomic Layr Etching Technology of Si with Self-limited Mechanism for Directional Ultrafine Pattern Fabrication

硅自限性原子层刻蚀定向超细图案技术的研究进展

基本信息

批准号：
06555089
负责人：
MATSUURA Takashi
金额：
$ 9.15万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1996
项目状态：
已结题

项目摘要

In this study, we have aimed at establishing the atomic layr etching technology of Si with a self-limited adsorption and reaction mechanism, and extended the research onto the Ge atomic layr etching as well as application of the low energy ECR chlorine plasma to the gate pattern fabrication in ultrasmall MOS devices.In self-limited atomic-layr-etching of Si, the etch rate per cycle in saturation for each crystal orientation has been found to agree well with the well-regulated fractional number of the atomic layr thickness, and the number when chlorine radicals are supplied is twice as high as that when only molecules are supplied. Moreover, the each rate in saturation is expressed by a simple relation consisting of the surface bond structure and the adsorption site of each orientation. In such the results, the Si etching amount depends on the amount of the chlorine adsorption. On the contrary, in the case of Ge, under the condition of saturated chlorine adsorption, it has been found that the etch rate per cycle at the low Ar^+ ion irradiation is 1/4 atomic layr thickness, and increases with the Ar^+ ion irradiation and saturates to the single atomic layr thickness. Furthermore, at the high Ar^+ ion irradiation, the etching characteristics have been expressed by an exponentially approaching equation which is based on a simple equi-probability Ar^+ ion induced reaction. From the measured energy dependence of the incident Ar^+ ion flux, atomic layr etching of Ge has been found to be dominated by Ar^+ ions with energy higher than -13eV.Also, highly selective directional gate etching for ultrasmall MOSFET's with a sub-0.1 micron feature size have been achieved by low energy ECR chlorine plasmas.Atomic layr etching can be considered as a final-selective-process, which is sensitive to the presence or the absence of adsorbed atoms. The success of this project supplies a key to the basic technology for ultrasmall device fabrication on group IV semiconductors.

本研究旨在建立自限吸附反应机制的Si原子层刻蚀技术，并将研究扩展到Ge原子层刻蚀以及低能ECR氯等离子体在超小型MOS器件栅图形制作中的应用。已经发现，对于每个晶体取向，饱和时的每个循环的蚀刻速率与原子层厚度的良好调节的分数一致，并且当提供氯自由基时的分数是仅提供分子时的两倍。此外，每个饱和速率由表面键结构和每个取向的吸附位点组成的简单关系表示。在这样的结果中，Si蚀刻量取决于氯吸附量。相反，对于Ge，在饱和氯吸附条件下，发现在低Ar^+离子辐照下，每个循环的刻蚀速率为1/4原子层厚度，并且随着Ar^+离子辐照的增加而增加，并饱和到单个原子层厚度。此外，在高Ar^+离子辐照下，刻蚀特性可用基于简单等概率Ar^+离子诱导反应的指数逼近方程表示。从入射Ar^+离子流的能量依赖性，发现Ge的原子层刻蚀主要是由能量高于-13eV的Ar^+离子进行的。同时，用低能ECR氯等离子体实现了对特征尺寸小于0.1 μ m的超小型MOSFET的高选择性定向栅刻蚀。原子层刻蚀可以被认为是一个最终选择性过程，其对吸附原子的存在或不存在敏感。该项目的成功为IV族半导体超小型器件的制造提供了基础技术。