Nanometer-Scale interface stracture of epitaxially-grown metallic multilayrs and their electronic properties

外延生长金属多层膜的纳米级界面结构及其电子性能

• 批准号: 06452313
• 负责人: YAMAMOTO Masahiko
• 金额: $ 4.67万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06452313/
• 关键词: Metallic Multilayr; Epitaxial Growth; Nanometer-Scale Analysis; Interface Structure; Electronic Properties; Scanning Probe Microscopy; Surface Topography; Perpendicular Magnetization

Pt/Co metallic multilayrs, a combination of a ferromagnetic metal Co and a noble metal Pt, and Pt thin films, as a fundamental unit of the multilayrs, were grown on Si (111) (7x7) substrate by molecular beam deposition method, and were studied about state of the substrate, crystal growth, surface topograph, inferior structure of the films, and role of Cu buffer layr, which give a great influence on epitaxial growth of the multilayrs. Interface structures are also studied on nanometer-scale, and the relations between such the structures and electronic properties were discussed.The studies with scanning tunneling microscopy, atomic force microscopy and transmission electron microscopy show that (i) Cu silicides are formed uniformly at Cu/Si interface, (ii) the Pt film keeps a single crystal in the depth direction, and (iii) the Pt film dose not have any pin hole and maintains high quality. It is concluded that the Pt films are suitable for a seeded layr.A Pt/Co multilayr was successfully grown epitaxially on the Si substrate with the Pt seeded layr and the Cu buffer layr by molecular beam deposition method under clean atmosphere of ultra-high vacuum condition. On crystal growth of the Pt/Co multilayr, both Pt on Co and Co on Pt are pseudomorphic, and hence Pt/Co multilayr contained elastic strain inside and showed superior perpendicular magnetoanisotropy.As to study on electronic properties of the Pt films and the Pt/Co multilayr, surface and interface effects in the electron transport are evaluated using a simulated model of electronic circuit. Increase of electrical resistivity induced by the interface was 65% of interior of multilayr.

采用分子束沉积法在Si (111) （7x7）衬底上生长了由铁磁性金属Co和贵金属Pt组成的Pt/Co金属多层膜，并以Pt薄膜为基本单元，研究了衬底状态、晶体生长、表面形貌、薄膜劣等结构以及Cu缓冲层的作用，这些因素对多层膜的外延生长有很大影响。在纳米尺度上研究了界面结构，并讨论了界面结构与电子性能的关系。扫描隧道显微镜、原子力显微镜和透射电镜研究表明：(1)Cu/Si界面上形成了均匀的硅化铜；(2)Pt膜在深度方向上保持单晶；(3)Pt膜没有针孔，保持了较高的质量。结果表明，Pt薄膜适合作为种子层。在超高真空洁净气氛下，采用分子束沉积的方法，在Si衬底上以Pt播种层和Cu缓冲层为基体，成功地外晶生长了Pt/Co多层膜。在Pt/Co多层膜的晶体生长过程中，Pt On Co和Co On Pt均为伪晶，因此Pt/Co多层膜内部含有弹性应变，并表现出优越的垂直磁各向异性。为了研究Pt薄膜和Pt/Co多层膜的电子性能，利用电子电路模拟模型对电子传递中的表面和界面效应进行了评价。界面引起的电阻率增加幅度为多层膜内部的65%。

项目成果

K.Nishikawa et al.: "Thickness dependence of surface topography and crystal growth of MBE-grown Pt films studied by STM/AFM and RHEED" Proc.13rd Int.Congress on Electron Microscopy. 13. 565-566 (1994)

K.Nishikawa 等人：“通过 STM/AFM 和 RHEED 研究 MBE 生长的 Pt 薄膜的表面形貌和晶体生长的厚度依赖性”Proc.13rd Int.Congress on Electron Microscopy。

H.Hayasaki et al.: "Epitaxial Growth of Sputtered Co/Cu,Cu/Co and Co Thin Films on MgO(100)Substrate" Proc.3rd Int.Symp.Sputtrering &Plasma Processes. 319- (1995)

H.Hayasaki 等人：“MgO(100) 基板上溅射 Co/Cu、Cu/Co 和 Co 薄膜的外延生长”Proc.3rd Int.Symp.Sputtrering

H.Hayasaki et al.: "Epitxy of Co/Cu and Cu/Co bilayers on MgO(111)" Thin Solid Films. 266(in press). (1996)

H.Hayasaki 等人：“MgO(111) 上 Co/Cu 和 Cu/Co 双层的外延”固体薄膜。

M.Yamamoto, K.Nishikawa and T.Kingetsu: "Epitaxial Growth and Electronic Properties of Metallic Thin Films and Multilayrs" Materia Japan. 34. 946-951 (1995)

M.Yamamoto、K.Nishikawa 和 T.Kingetsu：“金属薄膜和多层的外延生长和电子特性”Materia Japan。

H.Hayasaki M.Yamamoto K.Nishikawa and T.Kingetsu: "Epitaxy of Co/Cu and Cu/Co Bilayrs on MgO (111)" Thin Solid Films. (in press). (1996)

H.Hayasaki M.Yamamoto K.Nishikawa 和 T.Kingetsu：“MgO (111) 上 Co/Cu 和 Cu/Co 双层的外延”固体薄膜。