Ultra-High Density Magnetic Memory Cells
超高密度磁存储单元
基本信息
- 批准号:14102029
- 负责人:
- 金额:$ 65.89万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (S)
- 财政年份:2002
- 资助国家:日本
- 起止时间:2002 至 2006
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
We have investigated magnetic properties and magnetization processes of sub-micron magnetic memory cells in order to find a breakthrough that increases a density of MRAM (magnetic random access memory).(1) We have investigated method for recording magnetic memory. The magnetization direction of the asymmetric ring dots (material: 5-20 nm thick Ni-20at%Fe, diameter: 500-1000 nm) that have partly planed outer sides were controlled between clockwise and counterclockwise by in-plane magnetic fields, even though the ordinary ring dots needed the clockwise and counterclockwise magnetic fields caused by the perpendicular current.(2) We also have found that the cup-shaped magnetic memory cell required lower magnetic field to be recorded than the ring memory.(3) The Ni-Fe(10 nm)/Mn-Ir(10 nm) ring dot has fixed magnetization direction.(4) The information recorded in the magnetic memory can be detected using atomic force microscopy with conductive probe.
我们已经研究了亚微米磁性存储器单元的磁性和磁化过程,以便找到增加MRAM(磁性随机存取存储器)密度的突破。(1)研究了磁存储器的记录方法。具有部分平面外侧的非对称环点(材料:5-20 nm厚的Ni-20at%Fe,直径:500-1000 nm)的磁化方向由面内磁场控制在顺时针和逆时针之间,即使普通环点需要由垂直电流引起的顺时针和逆时针磁场。(2)我们还发现,杯形磁存储单元需要较低的磁场比环形存储器记录。(3)Ni-Fe(10 nm)/Mn-Ir(10 nm)环点具有固定的磁化方向。(4)记录在磁存储器中的信息可以使用具有导电探针的原子力显微镜来检测。
项目成果
期刊论文数量(168)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Transition between onion state and vortex state in exchange-coupled Ni-Fe/Mn-Ir asymmetric ring dots
交换耦合Ni-Fe/Mn-Ir不对称环点中洋葱态与涡旋态的转变
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:Isao Sasaki;Ryoichi Nakatani;Yasushi Endo;Yoshio Kawamura;Masahiko Yamamoto
- 通讯作者:Masahiko Yamamoto
Toshiki Kingetsu, Yasuhiro Kamada, Masahiko Yamamoto: "Ternary Metallic Strained Superlattices"17th International Colloquium on Magnetic Films and Surfaces. 234-235 (2002)
Toshiki Kingetsu、Yasuhiro Kamada、Masahiko Yamamoto:“三元金属应变超晶格”第十七届国际磁性薄膜和表面研讨会。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Binary Logic Gates by Ferromagrietic Nanodots : Toward Spin Computing
铁磁纳米点的二进制逻辑门:迈向自旋计算
- DOI:
- 发表时间:2004
- 期刊:
- 影响因子:0
- 作者:Masahiko Yamamoto;S.Anisul Haque;Ryoichi Nakatani;Yasushi Endo
- 通讯作者:Yasushi Endo
Ryoichi Nakatani: "Magnetic Properties in Mn/Si-O/Si(100)-substrate systems and Mn/Si-O/Si trilayers"Jpn.J.Appl.Phys.. 42・6A. 3392-3393 (2003)
Ryoichi Nakatani:“Mn/Si-O/Si(100)-基底系统和Mn/Si-O/Si三层膜中的磁性”Jpn.J.Appl.Phys.. 42・6A (2003)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Control of circular magnetizations in the Ni-Fe and Ni-Fe/Mn-Ir asymmctric ring dots
Ni-Fe 和 Ni-Fe/Mn-Ir 不对称环点中圆形磁化强度的控制
- DOI:
- 发表时间:2006
- 期刊:
- 影响因子:0
- 作者:I.Sasaki;R.Nakatani;Y.Endo;Y.Kawamura;M.Yamamoto;T.Takenaga;S.Aya;T.Kuroiwa;S.Beysen;H.Kobayashi
- 通讯作者:H.Kobayashi
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
数据更新时间:{{ journalArticles.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ monograph.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ sciAawards.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ conferencePapers.updateTime }}
{{ item.title }}
- 作者:
{{ item.author }}
数据更新时间:{{ patent.updateTime }}
YAMAMOTO Masahiko其他文献
YAMAMOTO Masahiko的其他文献
{{
item.title }}
{{ item.translation_title }}
- DOI:
{{ item.doi }} - 发表时间:
{{ item.publish_year }} - 期刊:
- 影响因子:{{ item.factor }}
- 作者:
{{ item.authors }} - 通讯作者:
{{ item.author }}
{{ truncateString('YAMAMOTO Masahiko', 18)}}的其他基金
Magnetic properties and atom-scale interface structure of epitaxially grown metallic strained superlattice
外延生长金属应变超晶格的磁性能和原子尺度界面结构
- 批准号:
08455291 - 财政年份:1996
- 资助金额:
$ 65.89万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Nanometer-Scale interface stracture of epitaxially-grown metallic multilayrs and their electronic properties
外延生长金属多层膜的纳米级界面结构及其电子性能
- 批准号:
06452313 - 财政年份:1994
- 资助金额:
$ 65.89万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Investigation of the dynamic body balance by tracking a moving target on CRT using visual-guided stimulation.
通过使用视觉引导刺激在 CRT 上跟踪移动目标来研究动态身体平衡。
- 批准号:
05671447 - 财政年份:1993
- 资助金额:
$ 65.89万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
ATOMIC SCALE STUDY ON STRUCTURE AND BEHAVIOR OF ELEMENTS IN AMORPHOUS ALLOYS
非晶合金元素结构和行为的原子尺度研究
- 批准号:
63550477 - 财政年份:1988
- 资助金额:
$ 65.89万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
Geochemistry of Autoliths within Granitoids
花岗岩内自生石的地球化学
- 批准号:
63540655 - 财政年份:1988
- 资助金额:
$ 65.89万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
相似海外基金
Non-volatile magnetic memory devices based on field-free spin-orbit torque switching of perpendicularly polarized magnets.
基于垂直极化磁体的无场自旋轨道扭矩切换的非易失性磁存储器件。
- 批准号:
2208057 - 财政年份:2022
- 资助金额:
$ 65.89万 - 项目类别:
Standard Grant
Development of Antiferromagnetic-Ferromagnetic Phase Transition by an Electric Field Application and Non-Volatile Magnetic Memory Application
通过电场应用和非易失性磁存储器应用开发反铁磁-铁磁相变
- 批准号:
21K04159 - 财政年份:2021
- 资助金额:
$ 65.89万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Development of new magnetic memory devices using nagative magnetizaion oxides
使用负磁化氧化物开发新型磁存储器件
- 批准号:
20H02829 - 财政年份:2020
- 资助金额:
$ 65.89万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Investigation of Metal Magnetic Memory for Stress State Identification in Steel Components
用于钢构件应力状态识别的金属磁记忆研究
- 批准号:
524177-2018 - 财政年份:2018
- 资助金额:
$ 65.89万 - 项目类别:
Engage Grants Program
Antiferromagnet-based Ultrafast Magnetic Memory Devices
基于反铁磁体的超快磁存储器件
- 批准号:
1808826 - 财政年份:2018
- 资助金额:
$ 65.89万 - 项目类别:
Standard Grant
Electric field controlled magnetic switching in multiferroic hetero structures towards ultra-low power magnetic memory application
多铁异质结构中的电场控制磁开关面向超低功耗磁存储器应用
- 批准号:
16K18079 - 财政年份:2016
- 资助金额:
$ 65.89万 - 项目类别:
Grant-in-Aid for Young Scientists (B)
GOALI: Study of Next-generation Nanopatterned Magnetic Memory Devices
GOALI:下一代纳米图案磁存储器件的研究
- 批准号:
1509020 - 财政年份:2015
- 资助金额:
$ 65.89万 - 项目类别:
Standard Grant
Heusler compounds for future magnetic memory and logic
用于未来磁存储器和逻辑的赫斯勒化合物
- 批准号:
263669276 - 财政年份:2014
- 资助金额:
$ 65.89万 - 项目类别:
Research Grants
SBIR Phase II: Electric-Field-Controlled Nonvolatile Magnetic Memory
SBIR 第二阶段:电场控制非易失性磁存储器
- 批准号:
1430815 - 财政年份:2014
- 资助金额:
$ 65.89万 - 项目类别:
Standard Grant
Study on low-power-consumption magnetic memory devices created by bottom-up formation of ferromagnetic nanowires
自下而上铁磁纳米线形成低功耗磁存储器件的研究
- 批准号:
25600034 - 财政年份:2013
- 资助金额:
$ 65.89万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research