EPI2SEM: EPItaxial growth and in-situ analysis of 2-dimensional SEMiconductors
EPI2SEM:二维 SEM 导体的外延生长和原位分析
基本信息
- 批准号:EP/T019018/1
- 负责人:
- 金额:$ 374.48万
- 依托单位:
- 依托单位国家:英国
- 项目类别:Research Grant
- 财政年份:2020
- 资助国家:英国
- 起止时间:2020 至 无数据
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The progressive miniaturization of materials and devices in the 21st century has enabled important discoveries and access to a wide range of phenomena of fundamental and applied interest. But future progress and innovative solutions to global challenges require a shift towards transformative material systems and integration technologies. Here we propose to establish at the University of Nottingham a facility (EPI2SEM) for the EPItaxial growth and in-situ analysis of a new generation of 2-dimensional SEMiconductors based on metal chalcogenides. Their unique electronic properties (tuneable band structure, IR-VIS-UV broad optical absorption, electron correlations, high electron mobility, etc.) and versatility for a wide range of applications (digital flexible electronics, optoelectronics, quantum technologies, energy, etc.) have attracted a surge of interest worldwide. However, for these new materials to meet academia and industry needs, several challenges must be addressed, including their controlled scalable growth, investigation by advanced techniques, and integration in complex device architectures. EPI2SEM will provide the UK community with a unique capability for the development of semiconductors grown with atomic layer precision in a clean ultra high vacuum system with fully-characterised electronic, chemical and morphological properties for advances across several research disciplines. EPI2SEM will enable the transformative miniaturization and functionalization of semiconductors for advances in condensed matter (quantum materials), manufacturing (new processes and designs), quantum technologies (security, sensing, communication), nanotechnologies (low-energy consumption, diversification, integration), surface physics (sensing, catalysis, energy conversion). Progress in these areas is key to the health of several research disciplines (engineering, medicine, chemistry, biology, etc.) contributing towards prosperity outcomes. The future competitiveness of the UK economy relies on innovation in science; ability to respond timely to global changes/challenges through innovation in infrastructure; the availability of highly-skilled and trained scientists and technologists; and flexibility to exploit novel technologies and materials to deliver better quality of life. This proposal has the potential to deliver innovation across these areas, addressing several challenges facing society. In particular, EPI2SEM will contribute to address the EPSRC priority of "21st Century Materials". In 2013, David Willetts announced the Eight Great Technologies that will propel the UK to future growth. This includes "Advanced Materials and Nanotechnology" that led to the establishment of the Henry Royce Institute (NGI) and the National Graphene Institute (NGI). One of the research pillars of the HRI/NGI is "2D Materials", but methods for their manufacturing need to be developed. The new equipment will set out the key steps needed to reach a long-term vision and benefit strategically important research areas, as set out in the 2018 government industrial strategy White paper.
21世纪材料和器件的不断小型化,使人们有了重要的发现,并获得了广泛的基础和应用兴趣现象。但未来的进步和应对全球挑战的创新解决方案需要向变革性材料系统和集成技术转变。在这里,我们建议在诺丁汉大学建立一个设备(EPI2SEM),用于新一代基于金属硫族化合物的二维半导体的外延生长和原位分析。其独特的电子特性(可调谐的能带结构,IR-VIS-UV宽光学吸收,电子相关性,高电子迁移率等)和广泛应用的多功能性(数字柔性电子,光电子,量子技术,能源等)引起了全世界的兴趣。然而,为了满足学术界和工业界的需求,这些新材料必须解决几个挑战,包括其可控的可扩展增长,先进技术的研究以及复杂器件架构中的集成。EPI2SEM将为英国社区提供一种独特的能力,用于在清洁的超高真空系统中以原子层精度生长半导体,具有完全表征的电子,化学和形态特性,可用于多个研究学科的进步。EPI2SEM将使半导体的变革性小型化和功能化在凝聚态物质(量子材料)、制造(新工艺和设计)、量子技术(安全、传感、通信)、纳米技术(低能耗、多样化、集成)、表面物理(传感、催化、能量转换)方面取得进展。这些领域的进展是几个研究学科(工程、医学、化学、生物学等)健康发展的关键,有助于实现繁荣成果。英国经济的未来竞争力依赖于科学创新;通过基础设施创新及时应对全球变化/挑战的能力;拥有高技能和训练有素的科学家和技术人员;灵活地利用新技术和新材料来提供更好的生活质量。该提案有潜力在这些领域进行创新,解决社会面临的一些挑战。特别是,EPI2SEM将有助于解决EPSRC“21世纪材料”的优先事项。2013年,David Willetts宣布了将推动英国未来发展的八大技术。其中包括“先进材料和纳米技术”,这导致了亨利·罗伊斯研究所(NGI)和国家石墨烯研究所(NGI)的建立。HRI/NGI的研究支柱之一是“二维材料”,但它们的制造方法需要开发。正如2018年政府产业战略白皮书所述,新设备将制定实现长期愿景所需的关键步骤,并使具有战略意义的重要研究领域受益。
项目成果
期刊论文数量(1)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Wafer-Scale Two-Dimensional Semiconductors for Deep UV Sensing.
- DOI:10.1002/smll.202305865
- 发表时间:2023-10
- 期刊:
- 影响因子:13.3
- 作者:Mustaqeem Shiffa;Benjamin T Dewes;J. Bradford;Nathan D Cottam;Tin S. Cheng;Christopher J. Mellor
- 通讯作者:Mustaqeem Shiffa;Benjamin T Dewes;J. Bradford;Nathan D Cottam;Tin S. Cheng;Christopher J. Mellor
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Amalia Patane其他文献
Amalia Patane的其他文献
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{{ truncateString('Amalia Patane', 18)}}的其他基金
UK director of the EMFL partnership
EMFL 合作伙伴英国总监
- 批准号:
EP/X020304/1 - 财政年份:2023
- 资助金额:
$ 374.48万 - 项目类别:
Research Grant
Membership of the UK to the European Magnetic Field Laboratory
英国成为欧洲磁场实验室的成员
- 批准号:
EP/N01085X/1 - 财政年份:2015
- 资助金额:
$ 374.48万 - 项目类别:
Research Grant
Two dimensional III-VI semiconductors and graphene-hybrid heterostructures
二维 III-VI 半导体和石墨烯混合异质结构
- 批准号:
EP/M012700/1 - 财政年份:2015
- 资助金额:
$ 374.48万 - 项目类别:
Research Grant
InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications
用于中红外器件的 InAsNSb 稀氮化物材料
- 批准号:
EP/J015296/1 - 财政年份:2012
- 资助金额:
$ 374.48万 - 项目类别:
Research Grant
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