Transferable two-dimensional correlated oxide layers

To2Dox旨在制备和表征一类新的基于相关过渡金属氧化物的独立2D层，以及它们与传统2D van der Waals(VDW)材料在多功能异质结中的结合。2D氧化物独立层将包含由电子关联驱动的新颖的自发和外部可切换的集体状态，这将极大地扩展当前VDW材料的功能能力，并与石墨烯旗舰产品产生协同效应。利用生长在牺牲层上的外延超薄氧化层，通过原子级控制其化学和结构，将合成新型的自支撑相关氧化物2D层。2D氧化层将使用为2D VDW材料开发的确定性放置方法进行转移和操作。将致力于表征这些氧化层独特的表面重构和缺陷结构及其功能响应。用基于混合泛函的第一性原理方法计算了2D氧化层中缺陷的原子、电子、磁性和振动性质。将相关氧化物的独立层与VDW 2D层相结合的异质结将激发全新一代的邻近现象。这将被用来设计具有可调谐响应的电子基态，这在目前的VDW材料中是不存在的，包括电控拓扑态、自旋轨道诱导的自旋织构或拓扑超导体。我们的项目将实现两个新兴领域的杂交：氧化物界面和2D VDW材料。它将协同一大批互补的专门知识，涵盖实现项目目标的所有研究方法。该联盟包括具有原子控制界面的氧化物的外延生长及其功能表征、氧化物缺陷表征和操纵、包括邻近相互作用的平面垂直器件的制造以及2D VDW材料的合成、操纵和表征的专家。关于To2Dox的预期影响，该项目依赖于通过结合全新的层状独立材料家族的强健集体状态来扩展2D材料的功能的变革性努力：2D氧化物材料。另一方面，致力于研究和实现一种基于氧化物纳米技术的新型技术平台，用于开发关联氧化物中的新量子态。此外，从应用的角度来看，可通过外场切换的集体订单可以启发新的器件概念的新策略，使未来的ATO-Joule低压逻辑超越当前CMOS半导体技术的(能量)限制。

To2Dox aims at fabricating and characterizing a new class of freestanding 2D layers based on correlated transition metal oxides, and their combination in multifunctional heterostructures with conventional 2D van der Waals (vdW) materials. 2D-oxide freestanding layers will harbor novel spontaneous and externally switchable collective states driven by electronic correlations which will tremendously expand the functional capabilities of current vdW materials and generate synergies with the Graphene Flagship. The new type of freestanding correlated oxide 2D layers will be synthesized from epitaxial ultrathin oxide layers grown on sacrificial layers with atomic level control of their chemistry and structure. 2D oxide layers will be transferred and manipulated using deterministic placement methods developed for 2D vdW materials. A strong effort will be dedicated to the characterization of the unique surface reconstructions and defect structure of these oxide layers and their functional response. The atomic, electronic, magnetic and vibrational properties of defects in 2D oxide layers will be calculated using the state-of-the-art first principles methods based on hybrid functionals. Heterostructures combining freestanding layers of correlated oxides with vdW 2D layers will inspire a completely new generation of proximity phenomena. These will be exploited to engineer electronic groundstates with tunable responses, absent in the current vdW materials including electrically controlled topological states, spin-orbit induced spin textures or topological superconductivity.Our project will realize the hybridization of two emerging fields: oxide interfaces and 2D vdW materials. It will synergize a very large palette of complementary expertise covering all the research methods to achieve project objectives. The consortium includes experts in the epitaxial growth of oxides with atomic control of the interfaces and in their functional characterization, in oxides defects characterization and manipulation, in the fabrication of planar perpendicular devices including proximity interactions and in the synthesis, manipulation and characterization of 2D vdW materials.Regarding the expected impact of To2Dox, the project relies on a transformative effort for expanding functionalities of 2D materials by incorporating the robust collective states of a completely new family of layered freestanding materials: the 2D oxide materials. On the other hand, it is committed to the study and realization of a novel technological platform based on the oxide nanotechnology for exploiting novel quantum states in correlated oxides. Furthermore, from the applied perspective, collective orders switchable by an external field could inspire new strategies for new device concepts towards future atto-Joule low voltage logic surpassing the (energy) limitations of the current CMOS semiconductor technology.