Exploring of New Properties of Non-Epitaxial Metallic Superlattices and Development of High Conductivity Superlattice Films

非外延金属超晶格新性能探索及高导超晶格薄膜开发

基本信息

  • 批准号:
    59460050
  • 负责人:
  • 金额:
    $ 5.18万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
  • 财政年份:
    1984
  • 资助国家:
    日本
  • 起止时间:
    1984 至 1986
  • 项目状态:
    已结题

项目摘要

1.Metallic superlattice films of Ag-Bi, Ag-Au, Yb-Sb and Bi-Sb systems were grown in order to investigate electrical properties and explore new features. In a possible stage of work, non-epitaxial film growth was done. By X-ray diffraction, superlattice structure was confirmed. For Ag-Bi and Ag-Au films, resistivity <rho> was proportional to 1/ <lambda> where <lambda> was the layer period.2.Yb-Sb superlattice system was investigated due to an expectation of getting some new electrical property. By setting the layer number ratio 1:1, the period of thickness <lambda> was varied from 10 to 1000 <ang> and the resistivities were measured as the function of temperature. The films of <lambda> <>!-> 100 <ang> , metallic behavior was obtained, while the films of <lambda> <100 <ang> ,semiconductive negative temperature dependence was found. The log <rho> vs. 1/T was not strait, but log <rho> vs. 1/( <T^(1/4)> gave a good fit of straight line which fact meant the system behaved as the Anderson lo … More calized state. Thus the Yb-Sb superlattice system has been found to show metal・non-metal transition very sharply at the period of <lambda> <:!=> 100 <ang> .3.Bi-Sb superlattice system was investigated rather in detail. The bulk Bi-Sb system is known as a whole range solid solution, nevertheless, 4 to 40 atom.% Sb alloy shows semiconducting nature. How is the behavior for the metallic superlattice films? The alloying concentration of Sb was substituted by the layer number ratio of Sb to the total perioic layer number. On the specimens of about ten kinds of Sb layer ratios, resistivity, Hall coefficient and magnetoresistance were measured as functions of temperature from 300K to 77K. Furthermore, the resistivity was measured as the function of temperature and negative temperature gradients were obtained for 0 to 48 Sb ratio, which gave apparent energy gap values. By analysing these data, such conclusion has been obtained that 4 to 48 Sb ratio of this superlattice system shows semiconductive nature and the maximum energy gap is 13 meV. It may be reasonable because the estimated de Broglie wave lengths of the carriers are 650 <ang> for Bi and 170 <゜!A> for Sb which are generally longer than the periodic length. Less
1.生长Ag-Bi、Ag-Au、Yb-Sb和Bi-Sb体系的金属超晶格薄膜,以研究电性能并探索新功能。在可能的工作阶段,完成了非外延薄膜生长。通过X射线衍射,确认了超晶格结构。对于Ag-Bi和Ag-Au薄膜,电阻率<rho>与1/<lambda>成正比,其中<lambda>是层周期。2.由于期望获得一些新的电学性质,所以对Yb-Sb超晶格系统进行了研究。通过将层数比设置为1:1,厚度周期<lambda>从10变化到1000<ang>,并且测量电阻率作为温度的函数。 <lambda> <>!-> 100 <ang> 的薄膜具有金属行为,而<lambda> <100 <ang> 的薄膜则具有半导体负温度依赖性。 log <rho> vs. 1/T 不是直线,但 log <rho> vs. 1/( <T^(1/4)> 给出了很好的直线拟合,这实际上意味着系统表现为 Anderson lo … More 钙化态。因此,Yb-Sb 超晶格系统被发现在 <lambda> <:!=> 100 <ang> .3.Bi-Sb 周期内非常急剧地表现出金属・非金属转变。超晶格 系统进行了相当详细的研究。块状 Bi-Sb 体系被称为全范围固溶体,然而,4 至 40 原子% Sb 合金显示出半导体性质。金属超晶格薄膜的行为如何? Sb的合金化浓度用Sb的层数与总周期性层数的比率来代替。十余种锑层比、电阻率、霍尔系数试件的研究 磁阻和磁阻是在 300K 到 77K 的温度范围内测量的。此外,测量电阻率作为温度的函数,并获得0至48 Sb比率的负温度梯度,这给出了表观能隙值。通过对这些数据的分析,得出这样的结论:该超晶格体系的Sb比为4~48,表现出半导体性质,最大能隙为13meV。可能是 这是合理的,因为 Bi 的估计载流子德布罗意波长为 650 <ang>,Sb 的估计载流子德布罗意波长为 170 <゜!A>,它们通常比周期长度长。少

项目成果

期刊论文数量(16)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Sei-ichi Tanuma: "Metal ・ Non-Metal Transition in Metallic Superlattice Films. ( in Japanese )" KOTAI BUTSURI (Solid State Physics). (1987)
Sei-ichi Tanuma:“金属超晶格薄膜中的金属·非金属转变。(日语)”KOTAI BUTSURI(固态物理学)(1987)。
  • DOI:
  • 发表时间:
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    0
  • 作者:
  • 通讯作者:
Takeshi Sekiguchi;Yoshisato Sasaki;Katsuya Noguchi;Sei-ichi Tanuma: Journal of the Physical Society of Japan. (1987)
Takeshi Sekiguchi;Yoshisato Sasaki;Katsuya Noguchi;Sei-ichi Tanuma:日本物理学会杂志。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Sei-ichi Tanuma;Takeshi Negishi;Yoshisato Sasaki: Journal of the Physical Society of Japan. (1987)
Sei-ichi Tanuma;Takeshi Negishi;Yoshisato Sasaki:日本物理学会杂志。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
田沼静一: 固体物理. (1987)
田沼精一:固体物理学(1987)。
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    0
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TANUMA Sei-ichi其他文献

TANUMA Sei-ichi的其他文献

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{{ truncateString('TANUMA Sei-ichi', 18)}}的其他基金

Creation of novel anticancer lead compounds targeting receptor-type tyrosine kinase Met molecule
创建针对受体型酪氨酸激酶 Met 分子的新型抗癌先导化合物
  • 批准号:
    25460156
  • 财政年份:
    2013
  • 资助金额:
    $ 5.18万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Molecular mechanisms and function of apoptosis Faculty of Pharmaceutical Science
细胞凋亡的分子机制和功能 药学院
  • 批准号:
    06454679
  • 财政年份:
    1994
  • 资助金额:
    $ 5.18万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Mechanism and function of apoptosis
细胞凋亡的机制和功能
  • 批准号:
    06045054
  • 财政年份:
    1994
  • 资助金额:
    $ 5.18万
  • 项目类别:
    Grant-in-Aid for international Scientific Research
Physiological role of endogenous mono (ADP-ribosyl) ation of GTP binding proteins
GTP 结合蛋白内源性单 (ADP-核糖基) 化的生理作用
  • 批准号:
    02807205
  • 财政年份:
    1990
  • 资助金额:
    $ 5.18万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
Researches on Transport Property and Electronic Structure of Metallic Superlattices, Metal Oxides and Metal Halogenides
金属超晶格、金属氧化物和金属卤化物的输运性质和电子结构研究
  • 批准号:
    01460036
  • 财政年份:
    1989
  • 资助金额:
    $ 5.18万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)

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