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Behavior of Sputtered Species and Formation of Amorphous Films

溅射物质的行为和非晶态薄膜的形成

基本信息

批准号：
62470063
负责人：
HANADA Teiichi
金额：
$ 4.48万
依托单位：
Kyoto University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1987
资助国家：
日本
起止时间：
1987 至 1988
项目状态：
已结题

项目摘要

1) Behavior of Sputtered Species During SIO_2 SputteringIn this study, the abundance distribuyion of nuetral sputtered species during SIO_2 sputtering was investigated by means of a quadrupole mass analyzer. The dependences of the abundance distribution upon O_2 content in the sputtering gas and upon the sputtering power were examined. SO, the neutral sputtered species during SIO_2 sputtering were determined to be Si, SiO, O. O_2. The ratio of the intensity of the mass spectrum for SiO to that for si increased with increasing O_2 content. The dependence of the abundance distribution upon O_2 content in the sputtering gas suggested that Si species reacted with O species to produce SiO species and that O_2 species were produced with the reaction between O species. The intensity of the mass spectra for both si and SiO species increased straightly with increasing the sputtering power, and then in had a plateau. This tendency was discussed in connection with sputtering process.2) Glow Discharge Mass Spectrometry During TeO_2 SputteringThe sputtered species furing TeO_2 sputtering was determined as a function of the oxygen partial pressure by using glow discharge mass spectrometry(GDMS). The oxygen content in the sputtering gas ranged from 0% to 100%. The ionic species during TeO_2 sputtering were found to be O_2^+, Ar^+, Ar_2^+, Te^+, TeO^+ and TeO_2^+. The ration of Te^+ to the total amount of Te^+, TeO^+ and TeO_2^+ decreased with increasing oxygen partial pressure. On the other hand, the opposite tendency was observed for the TeO^+ and the TeO_2^+ species. A fluorescence analysis was used in order to compare the composition of the sputtered species with that of the deposited thin film. This result suggests that the sputtered species react with oxygen on the substrate.

1)SiO_2溅射过程中溅射物种的行为本文用四极质谱仪研究了SiO_2溅射过程中中性溅射物种的丰度分布。研究了溅射气体中氧含量和溅射功率对丰度分布的影响。SO，确定SiO_2溅射过程中的中性溅射物种为Si、SiO、O。氧气随着O_2含量的增加，SiO与Si的质谱强度之比增大。丰度分布与溅射气体中O_2含量的关系表明，Si物种与O物种反应生成SiO物种，O_2物种是通过O物种之间的反应生成的。随着溅射功率的增加，Si和SiO物种的质谱强度都呈直线上升，然后出现一个平台。2）TeO_2溅射过程中的辉光放电质谱用辉光放电质谱（GDMS）测定了TeO_2溅射过程中的溅射物种随氧分压的变化。溅射气体中的氧含量范围为0%至100%。TeO_2溅射过程中的离子种类为O_2^+、Ar^+、Ar_2^+、Te^+、TeO^+和TeO_2^+。Te^+占Te^+、TeO^+和TeO_2^+总量的比例随氧分压的增大而减小。另一方面，TeO^+和TeO_2^+物种则有相反的趋势。使用荧光分析以比较溅射物质的组成与沉积薄膜的组成。该结果表明溅射物质与衬底上的氧反应。