Research for the deposition of new piezoelectric Ta_2O_5 films and their application to the communication device.

新型压电Ta_2O_5薄膜的沉积及其在通信器件中的应用研究

基本信息

  • 批准号:
    63460116
  • 负责人:
  • 金额:
    $ 4.29万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
  • 财政年份:
    1988
  • 资助国家:
    日本
  • 起止时间:
    1988 至 1989
  • 项目状态:
    已结题

项目摘要

Ta_2O_5 thin films have been used for forming thin-film capacitors and, more recently, for optical wave-guides and for antireflection coating on solar cells. These application are essentially based on the high chemical stability of this oxide and especially on its optimum optical properties such as a high refractive index and a very low absorption coefficient for light.In previous works, the Ta_2O_5 thin films were obtained by he thermal oxidation of a tantalum film evaporated onto a substrate, rf sputtering, and reactive dc sputtering. All Ta_2O_5 thin films obtained in previous work were amorphous, and were not single crystals.In this research, We have clarified next three points.(1) The first measurement of the material constants of Ta_2O_5 thin films was investigated. X-axis oriented Ta_2O_5 thin films were deposited on the fused quartz by using the dc diode sputtering method. The material constants were determined from the phase velocity and the electromechanical coupling constant of the bulk waves and the surface acoustic waves propagating on the layered substrate.(2) The Ta_2O_5 thin film was applied to the surface acoustic wave convolver. The conversion efficiency of the convolver compared, favorably with one of Y.Z,LiNbO3 single crystal. This result shows that the Ta_2O_5 thin film has a possibility to the applicable to the nonlinear acoustic device.In addition, it was reported that single crystal of Ta_2O_5 was ferro-elastic material.^<10> This single crystal may be able to be applied to electrical and optical switching devices.
Ta_2O_5薄膜被用来形成薄膜电容器,最近又被用来制作光波导和太阳能电池的减反射涂层。这些应用基本上是基于这种氧化物的高化学稳定性,特别是它的最佳光学性质,如高折射率和非常低的光吸收系数。在以前的工作中,Ta_2O_5薄膜是通过蒸发到衬底上的Ta_2O_5薄膜热氧化、射频溅射和反应直流溅射获得的。前人工作中得到的Ta_2O_5薄膜都是非晶态的,不是单晶的。在本研究中,我们澄清了以下三点:(1)首次测量了Ta_2O_5薄膜的材料常数。采用直流二极管溅射法在熔融石英衬底上制备了X轴取向的Ta_2O_5薄膜。由体波和声表面波在层状衬底上传播的相速度和机电耦合常数确定了材料常数。(2)将Ta2O5薄膜应用于声表面波卷积器。卷积器的转换效率与Y.Z,LiNbO_3单晶的转换效率相当。这说明Ta_2O_5薄膜有可能应用于非线性声学器件。此外,有报道称Ta_2O_5单晶是铁弹性材料。该单晶有望应用于电光开关器件。

项目成果

期刊论文数量(38)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Yasuhiko NAKAGAWA: "Deposition of new piezoelectric Ta_2O_5 thin films and their SAW properties" Ferroelectrics. 93. 13-20 (1989)
Yasuhiko NAKAGAWA:“新型压电 Ta_2O_5 薄膜的沉积及其 SAW 特性”铁电体。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
中川恭彦: "スパッタ法による配向性Ta_2O_5薄膜の作成" 応用物理学会研究発表会. (1989)
中川泰彦:“溅射法制备定向Ta_2O_5薄膜”日本应用物理学会研究报告(1989)。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Yasuhiko NAKAGAWA: "Material constants of oriented Ta_2O_5 thin films." Journal of Applied Physics(投稿中). (1989)
Yasuhiko NAKAGAWA:“定向 Ta_2O_5 薄膜的材料常数。”应用物理学杂志(进行中)(1989 年)。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Yasuhiko NAKAGAWA: Ferroelectrics. (1988)
中川康彦:铁电体。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Yasuhiko NAKAGAWA: "Parametric Mixing Effects in Surface Acoustic Waves Caused by Surface Perturbation" J.Journal Applied Physics. 28. 123-125 (1989)
Yasuhiko NAKAGAWA:“表面扰动引起的表面声波中的参数混合效应”J.Journal 应用物理学。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ monograph.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ sciAawards.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ conferencePapers.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ patent.updateTime }}

NAKAGAWA Yasuhiko其他文献

NAKAGAWA Yasuhiko的其他文献

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

{{ truncateString('NAKAGAWA Yasuhiko', 18)}}的其他基金

Research of a high frequency resonator using Lamb wave theory.
利用兰姆波理论研究高频谐振器。
  • 批准号:
    15360204
  • 财政年份:
    2003
  • 资助金额:
    $ 4.29万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
The preparation of a surface acoustic wave assist thin film phase grating and the application to the ultra micro optical system.
声表面波辅助薄膜相位光栅的制备及其在超微光学系统中的应用。
  • 批准号:
    10450116
  • 财政年份:
    1998
  • 资助金额:
    $ 4.29万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
Fabrication of thin film like an education of an embryo by using the surface acoustic waves.
使用表面声波制造类似胚胎教育的薄膜。
  • 批准号:
    07455136
  • 财政年份:
    1995
  • 资助金额:
    $ 4.29万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Surface acoustic wave convolver using a new ferroelastic Ta_2O_5 thin films.
声表面波卷积器采用新型铁弹Ta_2O_5薄膜。
  • 批准号:
    02555064
  • 财政年份:
    1990
  • 资助金额:
    $ 4.29万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
Research for the deposition of new piezoelectric <Ta_2O_5> single crystal films and their physical properties.
新型压电<Ta_2O_5>单晶薄膜的沉积及其物理性能研究。
  • 批准号:
    60460119
  • 财政年份:
    1985
  • 资助金额:
    $ 4.29万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)

相似海外基金

Defects and Conduction Mechanisms in Nonstoichiometric Tantalum Pentoxide
非化学计量五氧化二钽的缺陷和传导机制
  • 批准号:
    7621625
  • 财政年份:
    1977
  • 资助金额:
    $ 4.29万
  • 项目类别:
    Standard Grant
{{ showInfoDetail.title }}

作者:{{ showInfoDetail.author }}

知道了