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Research for the deposition of new piezoelectric Ta_2O_5 films and their application to the communication device.

Research for the deposition of new piezoelectric Ta_2O_5 films and their application to the communication device.
新型压电Ta_2O_5薄膜的沉积及其在通信器件中的应用研究
批准号:
63460116
负责人:
NAKAGAWA Yasuhiko
金额:
$4.29万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1988
资助国家:
日本
项目状态:
已结题
起止时间:
1988 至 1989

项目摘要

项目成果

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中文摘要
翻译
Ta_2O_5薄膜已被用于形成薄膜电容器,最近还用于光学波导和太阳能电池的抗反射涂层。这些应用基本上是基于这种氧化物的高化学稳定性,特别是其最佳的光学性能,如高折射率和非常低的光吸收系数。在以前的工作中,Ta_2O_5薄膜是通过热氧化蒸发到衬底上的钽膜,射频溅射和反应直流溅射得到的。在以前的工作中获得的Ta_2O_5薄膜都是无定形的,而不是单晶。在本研究中,我们明确了以下三点。(1)首次测定了Ta_2O_5薄膜的材料常数。采用直流二极管溅射法制备了x轴取向Ta_2O_5薄膜。材料常数由在层状基底上传播的体波和表面声波的相速度和机电耦合常数确定。(2)将Ta_2O_5薄膜应用于表面声波卷积器。与yz、LiNbO3单晶的转换效率进行了比较。结果表明,Ta_2O_5薄膜具有应用于非线性声学器件的可能性。此外,还报道了Ta_2O_5单晶为铁弹性材料。^<10>这种单晶可以应用于电气和光开关器件。
英文摘要
Ta_2O_5 thin films have been used for forming thin-film capacitors and, more recently, for optical wave-guides and for antireflection coating on solar cells. These application are essentially based on the high chemical stability of this oxide and especially on its optimum optical properties such as a high refractive index and a very low absorption coefficient for light.In previous works, the Ta_2O_5 thin films were obtained by he thermal oxidation of a tantalum film evaporated onto a substrate, rf sputtering, and reactive dc sputtering. All Ta_2O_5 thin films obtained in previous work were amorphous, and were not single crystals.In this research, We have clarified next three points.(1) The first measurement of the material constants of Ta_2O_5 thin films was investigated. X-axis oriented Ta_2O_5 thin films were deposited on the fused quartz by using the dc diode sputtering method. The material constants were determined from the phase velocity and the electromechanical coupling constant of the bulk waves and the surface acoustic waves propagating on the layered substrate.(2) The Ta_2O_5 thin film was applied to the surface acoustic wave convolver. The conversion efficiency of the convolver compared, favorably with one of Y.Z,LiNbO3 single crystal. This result shows that the Ta_2O_5 thin film has a possibility to the applicable to the nonlinear acoustic device.In addition, it was reported that single crystal of Ta_2O_5 was ferro-elastic material.^<10> This single crystal may be able to be applied to electrical and optical switching devices.
期刊论文(38)
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会议论文
Yasuhiko NAKAGAWA: "Deposition of new piezoelectric Ta_2O_5 thin films and their SAW properties" Ferroelectrics. 93. 13-20 (1989)
Yasuhiko NAKAGAWA:“新型压电 Ta_2O_5 薄膜的沉积及其 SAW 特性”铁电体。
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通讯作者:
中川恭彦: "スパッタ法による配向性Ta_2O_5薄膜の作成" 応用物理学会研究発表会. (1989)
中川泰彦:“溅射法制备定向Ta_2O_5薄膜”日本应用物理学会研究报告(1989)。
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通讯作者:
Yasuhiko NAKAGAWA: "Material constants of oriented Ta_2O_5 thin films." Journal of Applied Physics(投稿中). (1989)
Yasuhiko NAKAGAWA:“定向 Ta_2O_5 薄膜的材料常数。”应用物理学杂志(进行中)(1989 年)。
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发表时间:
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通讯作者:
Yasuhiko NAKAGAWA: Ferroelectrics. (1988)
中川康彦:铁电体。
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共 17 条
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