Microfabrication and Joining by Field Evaporation Mechanism

通过场蒸发机制进行微细加工和接合

• 批准号: 03805063
• 负责人: YASUDA Kiyokazu
• 金额: $ 1.09万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1992
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-03805063/
• 关键词: Microfabrication; Microjoining; Scanning tunneling microscope; STM; Field evaporation; Surface modification; Silicon; LB膜; マイクロクラスタ-; 有機金属錯体

The purpose of this research is to clarify mechanism of surface modification in nanometer scale by field evaporation and melting process using scanning tunneling microscope in air. The tip used in the experiment was produced by electrochemical etching with DC power supply. The tip with curvature 33*10nm and aspect ratio 2.2 was produced when etching voltage is 40V. In order to prevent tip surface from oxidation whcih causes degradation of resolution and stability, tip was coated with gold thin film by vacuum deposition. The tip was very stable in air with high resolution of atomic scale (HOPG) even after 1 week. In experiment of biasing voltage to sample for surface modification, etching of sample (Si) was observed when negative voltage was applied to the sample. The depth of etching region was proportional to the power of bias voltage. This results mean that surface modification was caused by electric field, not by mechanical contact. With positive bias voltage to sample no surface modification occured, presumably caused by Shottoky effect of Ntype Si. From I-S (tunnel current - gap distance) characteristics of modified region mean barriar height psi_m was decreased as number of scanning frame was increased. This effect was rusulted by surface oxidation of silicon.

本研究的目的是阐明在空气中使用扫描隧道显微镜通过场蒸发和熔化过程进行纳米级表面改性的机理。实验中使用的尖端是在直流电源下通过电化学蚀刻制成的。当刻蚀电压为40V时，制作出曲率33*10nm、深宽比2.2的尖端。为了防止针尖表面氧化而导致分辨率和稳定性下降，通过真空沉积在针尖上涂覆金薄膜。即使在 1 周后，尖端在空气中也非常稳定，具有高分辨率原子尺度 (HOPG)。在对样品施加偏压进行表面改性的实验中，当向样品施加负电压时，观察到样品(Si)的蚀刻。蚀刻区域的深度与偏压的功率成正比。该结果意味着表面改性是由电场引起的，而不是由机械接触引起的。使用正偏压样品时，没有发生表面改性，这可能是由 N 型硅的肖托基效应引起的。从I-S（隧道电流-间隙距离）特征来看，修改区域的平均势垒高度psi_m随着扫描帧数量的增加而减小。这种效应是由硅的表面氧化引起的。

项目成果

Kiyokazu Yasuda, Toshihiro Iwasaki, Syuji Nakata: "Surface Modification by Field Evaporation using Scanning Tunneling Microscope" Japanese Journal of Applied Physics.

Kiyokazu Yasuda、Toshihiro Iwasaki、Syuji Nakata：“使用扫描隧道显微镜通过场蒸发进行表面改性”日本应用物理学杂志。

Kiyokazu Yasuda, Toshihiro Iwasaki, Syuji Nakata: "Surface Modification of Si Wafer by Scanning Tunneling Microscope" Japanese Journal of Applied Physics.

Kiyokazu Yasuda、Toshihiro Iwasaki、Syuji Nakata：“通过扫描隧道显微镜对硅晶片进行表面改性”日本应用物理学杂志。

Kiyokazu YASUDA,Toshihiro IWASAKI,Syuji NAKATA: "Surface Modification by Fieid Evaporation using Scanning Tunneling Micorscope" Japanese Journal of Applied Physics.

Kiyokazu YASUDA、Toshihiro IWASAKI、Syuji NAKATA：“使用扫描隧道显微镜通过 Fieid 蒸发进行表面改性”日本应用物理学杂志。

Kiyokazu Yasuda, Mamoru Itou, Syuji Nakata: "Surface Modification of gold thin film by Pulse Voltage by Scanning Tunneling Microscope" Japanese Journal of Applied Physics.

Kiyokazu Yasuda、Mamoru Itou、Syuji Nakata：“扫描隧道显微镜通过脉冲电压对金薄膜进行表面改性”日本应用物理学杂志。

Kiyokazu YASUDA,Toshihiro IWASAKI,Syuji NAKATA: "Surface Modification by Field Evaporation using Scanning Tunneling Micorscope" Japanese Journal of Applied Physics.

Kiyokazu YASUDA、Toshihiro IWASAKI、Syuji NAKATA：“使用扫描隧道显微镜通过场蒸发进行表面改性”日本应用物理学杂志。