The fabrication of super atom structure using Si based self-assembled quantum dots and its electron state control

硅基自组装量子点超原子结构的制备及其电子态控制

• 批准号: 15206035
• 负责人: MIYAZAKI Seiichi
• 金额: $ 31.37万
• 依托单位: HIROSHIMA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15206035/
• 关键词: Quantum dots; 自己組織化

We have demonstrate that the Si nucleation density with remote H_2 plasma treatments just before SiH_4-LPCVD can be controlled up to 〜1x10^<11>cm^<-2> by changing the VHF power, the H_2 plasma pressure and the substrate temperature. The combination of the remote Ar plasma and subsequent H_2 plasma is quite effective to achieve a uniform size distribution of Si dots with an areal density of the order of 10^<11>cm^<-2>. This technique is very promising for the fabrication of multiple stacked structures of Si-based dots embedded in Si0_2.The combination of LPCVD and remote plasma surface treatments including remote plasma oxidation is a promising method to fabricate multiply-stacked structures consisting of Si-QDs and ultrathin SiO_2 interlayers. From observing the. charging and discharging characteristics of multiply-stacked Si-QDs in Si0_2. The temporal decay of charged states of high density Si-QDs can be characterized by not only discharging process through the bottom tunnel oxide but … More also the neutralization due to carrier recombination.For valency control of self-assembled Si quantum dots (Si-QDs), boron or phosphorous doping to Si-QDs was performed by a pulse injection of 1% B_2H_6 or PH_3 diluted with He during the dot formation on thermally-grown Si0_2 from thermal decomposition of pure SiH_4. Electron charging to and discharging from B or P-doped Si-QDs were studied to characterize their electronic charged states by a Kelvin probe technique using Rh-coated AFM tip. The potential changes corresponding to the extraction of one electron from the B and P-doped Si-QDs were observed by applying tip biases of +0.5V and +0.2V, respectively. On the other hand, for pure Si-QDs with almost the same size as doped Si-QDs, the tip bias causing almost the same amount of the potential change was as high as 〜1V. The electron extraction from B and P-doped Si-QDs can be interpreted in terms of the emission of an electron generated from ionized B acceptor and of a conduction electron caused by ionized P donor, being different from the emission of valence electrons from undoped Si-QDs. Also, an improvement of retention characteristics of positively-charged states was confirmed especially for P-doped Si-QDs. Less

我们已经证明，通过改变VHF功率、H_2等离子体压力和衬底温度，在SiH_4-LPCVD之前进行远程H_2等离子体处理的Si成核密度可以控制在〜1x10^<11>cm^<-2>。远程Ar等离子体和随后的H_2等离子体的组合对于实现面密度为10^<11>cm^-2>量级的Si点的均匀尺寸分布非常有效。该技术对于嵌入 SiO_2 中的硅基点的多层堆叠结构的制造非常有前景。LPCVD 和远程等离子体表面处理（包括远程等离子体氧化）的结合是制造由 Si-QD 和超薄 SiO_2 中间层组成的多层堆叠结构的一种有前途的方法。从观察来看。 SiO_2 中多层堆叠 Si-QD 的充放电特性。高密度 Si-QD 的带电状态的时间衰减不仅可以通过底部隧道氧化物的放电过程来表征，还可以通过载流子复合引起的中和来表征。为了自组装 Si 量子点 (Si-QD) 的化合价控制，通过在点期间用 He 稀释的 1% B_2H_6 或 PH_3 的脉冲注入来对 Si-QD 进行硼或磷掺杂。 由纯SiH_4的热分解在热生长的SiO_2上形成。通过使用 Rh 涂层 AFM 尖端的开尔文探针技术，研究了 B 或 P 掺杂 Si-QD 的电子充电和放电，以表征其电子带电状态。通过分别施加+0.5V和+0.2V的尖端偏压，观察到从B和P掺杂的Si-QD中提取一个电子所对应的电势变化。另一方面，对于与掺杂 Si-QD 尺寸几乎相同的纯 Si-QD，引起几乎相同量的电势变化的尖端偏压高达〜1V。 B 和 P 掺杂 Si-QD 的电子提取可以解释为电离 B 受体产生的电子发射和电离 P 供体引起的传导电子发射，这与未掺杂 Si-QD 的价电子发射不同。此外，特别是对于 P 掺杂的 Si-QD，证实了带正电状态的保留特性的改善。较少的

项目成果

Characterization of Electronic Charged States of Single Si Quantum Dots with Ge Core Using AFM/Kelvin Probe Technique

使用 AFM/开尔文探针技术表征具有 Ge 核的单硅量子点的电子带电状态

• 发表时间: 2004
• 期刊: Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-18]
• 作者: Y.Darma;K.Takeuchi;S.Miyazaki
• 通讯作者: S.Miyazaki

Control of Charged States of Silicon-Based Quantum Dots and Its Application to Floating Gate MOS Memorie

硅基量子点带电状态控制及其在浮栅MOS存储器中的应用

• 发表时间: 2005
• 期刊: Abst.of First Int.Workshop on New Group IV Semiconductor Nanoelectronics
• 作者: S.Miyazaki

Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in Si02 by Combination of Low-Pressure CVD with Remote Plasma Treatments

通过低压CVD与远程等离子体处理相结合制造嵌入SiO 2 中的Si量子点的多层堆叠结构

• 期刊: Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-35]
• 作者: K.Makihara;H.Nakagawa;M.Ikeda;H.Murakami;S.Higashi;S.Miyazaki
• 通讯作者: S.Miyazaki

Infuence of Thermal Annealing on Compotional Mixing and Crystallinity of Highly-Selective Grown Si Dots with Ge Core

热退火对Ge核高选择性生长硅点的成分混合和结晶度的影响

• 发表时间: 2003
• 期刊: Ext. Abst. of 1st Int. SiGe Technology and Device Meeting (Nagoya, Jan. 15-17, 2003)
• 作者: Y.Darma;H.Murakami;S.Miyazaki
• 通讯作者: S.Miyazaki

Local Characterization of Electronic Transport in Microcrystalline Germanium Thin Films by Atomic Force Microscopy Using a Conducting Probe

使用导电探针通过原子力显微镜对微晶锗薄膜中的电子传输进行局部表征

• 发表时间: 2003
• 期刊: Proc. 2003 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Busan, June 30-July2, 2003)
• 作者: K.Makihara;Y.Okamoto;H.Nakagawa;M.Ikeda;H.Murakami;S.Miyazaki
• 通讯作者: S.Miyazaki