Control of Silicon quantum structures and its application to room-temperature device operation

硅量子结构的控制及其在室温器件运行中的应用

• 批准号: 10305026
• 负责人: MIYAZAKI Seiichi
• 金额: $ 23.42万
• 依托单位: HIROSHIMA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A).
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10305026/
• 关键词: Silicon; Quantum Effect; Quantum Dots; Low Pressure CVD; Location Control; Scanning Probe Microscope; Tunnel Current; 量子構造; 自己組織化形成; 原子間力顕微鏡; 選択成長; 表面化学結合

Self-assembling formation of silicon quantum dots (SiQDs) on ultrathin SiO_2 by low pressure CVD using silane (SiH_4) has been studied, and the formation mechanism for positioning SiQDs has been proposed and a practical process to control the arrangement of the SiQDs has been developed. In addition, for multiply-stacked SiQDs covered with very thin SiO_2, specific non-linear conductance and its temporal variation have been measured at room temperature. The major results and achievements of this research are as follows :(1) Since Si-OH bonds on the SiO_2 surface act as reactive sites in SiH_4-LPCVD, the position control of the Si-OH bonds enables us to control the arrangement of the SiQDs on SiO_2.(2) Area-selective nucleation for the Si dot arrangement is degraded seriously by surface contamination due to physisorption of hydrocarbons and/or water molecules, which is inevitable in exposure to clean room air.(3) Surface modification techniques using a scanning probe microscope such as A … More FM or STM have been applied to form the Si-OH bonds out the SiO_2 surface intentionally at a certain position or area. Based on these techniques, a contamination-free process for the selective nucleation has been developed to realize highly-selective growth and precise positioning of the SiQDs.(4) The double barrier structures of a SiQDs array sandwiched with ultrathin SiO_2 layers have been characterized by simultaneously-measured AFM topographic and current images, The results show that the resonant tunneling through each of the SiQDs depends on not only the dot size but also the difference in electron charging among the neighboring dots.(5) The amount of electron charging into the SiQDs can be derived from the change in the local surface potential measured by operating an AFM tip with a Kelvin probe mode.(6) The electron transport through multiply-stacked SiQDs covered with SiO_2, which were prepared by repeating the dot formation and the surface oxidation, has been studied and distinct random telegraph noise (RTN) in tunneling current, through coupled SiQDs has been measured even at room temperature. The bias voltage dependence of the frequency and the current variation in the RTN suggests that the observed RTN phenomenon can be interpreted in terms of electron charging and discharging in the dots being the neighbor of the tunneling path for coupled quantum dots. Less

研究了利用硅烷(SiH_4)在超薄SiO_2上通过低压CVD自组装形成硅量子点(SiQD)，提出了SiQD定位的形成机制，并开发了控制SiQD排列的实用工艺。此外，对于覆盖有非常薄的SiO_2的多层堆叠SiQD，在室温下测量了特定的非线性电导及其时间变化。本研究的主要成果和成果如下：(1)由于SiO_2表面的Si-OH键在SiH_4-LPCVD中充当反应位点，因此对Si-OH键的位置控制使我们能够控制SiQDs在SiO_2上的排列。(2)Si点排列的区域选择性成核由于表面污染而严重退化。 碳氢化合物和/或水分子，这是暴露在洁净室空气中不可避免的。（3）使用扫描探针显微镜（例如A … More FM或STM）的表面改性技术已被应用于在SiO_2表面的特定位置或区域有意地形成Si-OH键。基于这些技术，开发了一种无污染的选择性成核工艺，以实现SiQD的高选择性生长和精确定位。(4)通过同时测量的AFM形貌和电流图像对夹有超薄SiO_2层的SiQD阵列的双势垒结构进行了表征。结果表明，穿过每个SiQD的共振隧道效应不取决于 (5) SiQD 中的电子充电量可以通过使用开尔文探针模式操作 AFM 尖端测得的局部表面电势的变化来获得。(6) 通过重复点形成和表面氧化制备的覆盖有 SiO_2 的多层堆叠 SiQD 的电子传输进行了研究，并且具有明显的随机性 即使在室温下，也可以通过耦合 SiQD 测量隧道电流中的电报噪声 (RTN)。 RTN 中频率和电流变化的偏置电压依赖性表明，观察到的 RTN 现象可以用与耦合量子点的隧道路径相邻的点中的电子充电和放电来解释。较少的

项目成果

A.Kohno: "Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures"Ext.Abs.of the 1998 Int.Conf.on Solid State Deices and Materials. 174-175 (1998)

A.Kohno：“单电子对 MOS 结构中的硅量子点浮栅充电”1998 年固态器件和材料国际会议的 Ext.Abs.。

S.A.Ding: "Quantum confinement effect in self-assembled nanometer silicon dots"Applied Physics Letters. 73. 3881-3883 (1998)

S.A.Ding：“自组装纳米硅点中的量子限制效应”应用物理快报。

香野淳: "シリコン量子ドットフローティングゲートMOS構造の電子注入とメモリ機能"信学技報. 103-108 (2001)

Jun Kono：“硅量子点浮栅MOS结构的电子注入和存储功能”IEICE技术报告103-108（2001）。

S.Miyazaki: "Control of Self-Assebling Formation of Nanometer Silicon Dots by Low Pressure Chemical Vapor Deposition"Thin Solid Films. 369. 55-59 (2000)

S.Miyazaki：“通过低压化学气相沉积控制纳米硅点的自组装形成”固体薄膜。

Seiichi Miyazaki: "Self-Assembling of Sl Quantum Dots and Its Application to Floating Gate Memory(invited)" Proc.of Intern.Microprocesses and Nanotechnology Conf.(1999)

宫崎精一：“Sl量子点的自组装及其在浮栅存储器中的应用（特邀）”Proc.of Intern.Microprocesses and Nanotechnology Conf.(1999)