Control of Silicon quantum structures and its application to room-temperature device operation

硅量子结构的控制及其在室温器件运行中的应用

• 批准号: 10305026
• 负责人: MIYAZAKI Seiichi
• 金额: $ 23.42万
• 依托单位: HIROSHIMA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A).
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10305026/
• 关键词: Silicon; Quantum Effect; Quantum Dots; Low Pressure CVD; Location Control; Scanning Probe Microscope; Tunnel Current; 量子構造; 自己組織化形成; 原子間力顕微鏡; 選択成長; 表面化学結合

Self-assembling formation of silicon quantum dots (SiQDs) on ultrathin SiO_2 by low pressure CVD using silane (SiH_4) has been studied, and the formation mechanism for positioning SiQDs has been proposed and a practical process to control the arrangement of the SiQDs has been developed. In addition, for multiply-stacked SiQDs covered with very thin SiO_2, specific non-linear conductance and its temporal variation have been measured at room temperature. The major results and achievements of this research are as follows :(1) Since Si-OH bonds on the SiO_2 surface act as reactive sites in SiH_4-LPCVD, the position control of the Si-OH bonds enables us to control the arrangement of the SiQDs on SiO_2.(2) Area-selective nucleation for the Si dot arrangement is degraded seriously by surface contamination due to physisorption of hydrocarbons and/or water molecules, which is inevitable in exposure to clean room air.(3) Surface modification techniques using a scanning probe microscope such as A … More FM or STM have been applied to form the Si-OH bonds out the SiO_2 surface intentionally at a certain position or area. Based on these techniques, a contamination-free process for the selective nucleation has been developed to realize highly-selective growth and precise positioning of the SiQDs.(4) The double barrier structures of a SiQDs array sandwiched with ultrathin SiO_2 layers have been characterized by simultaneously-measured AFM topographic and current images, The results show that the resonant tunneling through each of the SiQDs depends on not only the dot size but also the difference in electron charging among the neighboring dots.(5) The amount of electron charging into the SiQDs can be derived from the change in the local surface potential measured by operating an AFM tip with a Kelvin probe mode.(6) The electron transport through multiply-stacked SiQDs covered with SiO_2, which were prepared by repeating the dot formation and the surface oxidation, has been studied and distinct random telegraph noise (RTN) in tunneling current, through coupled SiQDs has been measured even at room temperature. The bias voltage dependence of the frequency and the current variation in the RTN suggests that the observed RTN phenomenon can be interpreted in terms of electron charging and discharging in the dots being the neighbor of the tunneling path for coupled quantum dots. Less

本文研究了用硅烷（SiH_4）低压CVD法在SiO_2衬底上自组装形成硅量子点（SiQDs），提出了SiQDs的定位形成机理，并提出了一种控制SiQDs排列的实用工艺。此外，在室温下测量了多层SiQDs的非线性电导率及其随时间的变化。（1）由于SiH_4-LPCVD中SiO_2表面的Si-OH键起反应中心的作用，因此通过控制Si-OH键的位置可以控制SiQDs在SiO_2表面的排列。(2)由于烃和/或水分子的物理吸附，Si点排列的区域选择性成核被表面污染严重退化，这在暴露于洁净室空气中是不可避免的。(3)使用扫描探针显微镜如A ...更多信息 FM或STM可以在SiO_2表面的特定位置或区域形成Si-OH键。在此基础上，发展了一种无污染的选择性成核工艺，实现了硅量子点的高选择性生长和精确定位。(4)用AFM形貌图和电流像对SiQDs阵列的双势垒结构进行了表征。结果表明，通过每个SiQDs的共振隧穿不仅取决于量子点的尺寸，而且还取决于相邻量子点之间的电荷差异。(5)进入SiQD的电子充电量可以从通过用开尔文探针模式操作AFM针尖测量的局部表面电势的变化导出。(6)本文研究了在多层SiO_2量子点中的电子输运，并在室温下测量了耦合SiQDs的隧穿电流中明显的随机电报噪声（RTN）。RTN中的频率和电流变化的偏置电压依赖性表明，所观察到的RTN现象可以被解释为在耦合量子点的隧穿路径的邻居的点中的电子充电和放电。少

项目成果

A.Kohno: "Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures"Ext.Abs.of the 1998 Int.Conf.on Solid State Deices and Materials. 174-175 (1998)

A.Kohno：“单电子对 MOS 结构中的硅量子点浮栅充电”1998 年固态器件和材料国际会议的 Ext.Abs.。

S.A.Ding: "Quantum confinement effect in self-assembled nanometer silicon dots"Applied Physics Letters. 73. 3881-3883 (1998)

S.A.Ding：“自组装纳米硅点中的量子限制效应”应用物理快报。

香野淳: "シリコン量子ドットフローティングゲートMOS構造の電子注入とメモリ機能"信学技報. 103-108 (2001)

Jun Kono：“硅量子点浮栅MOS结构的电子注入和存储功能”IEICE技术报告103-108（2001）。

S.Miyazaki: "Control of Self-Assebling Formation of Nanometer Silicon Dots by Low Pressure Chemical Vapor Deposition"Thin Solid Films. 369. 55-59 (2000)

S.Miyazaki：“通过低压化学气相沉积控制纳米硅点的自组装形成”固体薄膜。

Seiichi Miyazaki: "Self-Assembling of Sl Quantum Dots and Its Application to Floating Gate Memory(invited)" Proc.of Intern.Microprocesses and Nanotechnology Conf.(1999)

宫崎精一：“Sl量子点的自组装及其在浮栅存储器中的应用（特邀）”Proc.of Intern.Microprocesses and Nanotechnology Conf.(1999)