Control of Silicon quantum structures and its application to room-temperature device operation

硅量子结构的控制及其在室温器件运行中的应用

• 批准号: 10305026
• 负责人: MIYAZAKI Seiichi
• 金额: $ 23.42万
• 依托单位: HIROSHIMA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A).
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10305026/
• 关键词: Silicon; Quantum Effect; Quantum Dots; Low Pressure CVD; Location Control; Scanning Probe Microscope; Tunnel Current; 量子構造; 自己組織化形成; 原子間力顕微鏡; 選択成長; 表面化学結合

Self-assembling formation of silicon quantum dots (SiQDs) on ultrathin SiO_2 by low pressure CVD using silane (SiH_4) has been studied, and the formation mechanism for positioning SiQDs has been proposed and a practical process to control the arrangement of the SiQDs has been developed. In addition, for multiply-stacked SiQDs covered with very thin SiO_2, specific non-linear conductance and its temporal variation have been measured at room temperature. The major results and achievements of this research are as follows :(1) Since Si-OH bonds on the SiO_2 surface act as reactive sites in SiH_4-LPCVD, the position control of the Si-OH bonds enables us to control the arrangement of the SiQDs on SiO_2.(2) Area-selective nucleation for the Si dot arrangement is degraded seriously by surface contamination due to physisorption of hydrocarbons and/or water molecules, which is inevitable in exposure to clean room air.(3) Surface modification techniques using a scanning probe microscope such as A … More FM or STM have been applied to form the Si-OH bonds out the SiO_2 surface intentionally at a certain position or area. Based on these techniques, a contamination-free process for the selective nucleation has been developed to realize highly-selective growth and precise positioning of the SiQDs.(4) The double barrier structures of a SiQDs array sandwiched with ultrathin SiO_2 layers have been characterized by simultaneously-measured AFM topographic and current images, The results show that the resonant tunneling through each of the SiQDs depends on not only the dot size but also the difference in electron charging among the neighboring dots.(5) The amount of electron charging into the SiQDs can be derived from the change in the local surface potential measured by operating an AFM tip with a Kelvin probe mode.(6) The electron transport through multiply-stacked SiQDs covered with SiO_2, which were prepared by repeating the dot formation and the surface oxidation, has been studied and distinct random telegraph noise (RTN) in tunneling current, through coupled SiQDs has been measured even at room temperature. The bias voltage dependence of the frequency and the current variation in the RTN suggests that the observed RTN phenomenon can be interpreted in terms of electron charging and discharging in the dots being the neighbor of the tunneling path for coupled quantum dots. Less

已经研究了使用硅烷（SIH_4）在超压SIO_2上的硅量子点（SIQD）的自组装形成，并且已经提出了定位SIQDS的形成机制，并且已经开发了用于控制SIQD的排列的实用过程。此外，对于覆盖有非常薄的SIO_2的多重堆积SIQD，在室温下测量了特定的非线性电导及其临时变化。这项研究的主要结果和成就如下：（1）由于SIO_2表面上的Si-OH键充当SIH_4-LPCVD中的反应性位点，因此Si-OH键的位置控制使我们能够控制SIQDS在SIO_2上的安排，因为SIO_2的质量分组构成了Siio-seperiation surecition serperior spretial neTor necie n ygrandor si degrandor sig si degrade sig si degraded is sii bections s sii siqu sii degrade s si of sii bection s siiqds sequ sii bortial sii boncements。碳氢化合物和/或水分子在暴露于干净的房间空气中是不可避免的。（3）使用扫描探针显微镜（例如A…更多的FM或STM）进行表面修饰技术，以在某个位置或区域故意形成SIO_2表面的SI-OH键。基于这些技术，已经开发了用于实现SIQDS高度选择性的生长和精确定位的无污染的过程。 dot size but also the difference in electron charging among the neighboring dots.(5) The amount of electron charging into the SiQDs can be derived from the change in the local surface potential measured by operating an AFM tip with a Kelvin probe mode.(6) The electron transport through multiply-stacked SiQDs covered with SiO_2, which were prepared by repeating the dot formation and the surface oxidation, has been studiod and distinct random telegraph隧道电流中的噪声（RTN），即使在室温下也可以通过耦合的SIQD进行测量。频率的偏置电压依赖性和RTN中的电流变化表明，观察到的RTN现象可以用电子充电和排放来解释，这是偶联量子点的隧道路径的邻居。较少的

项目成果

S.A.Ding: "Quantum confinement effect in self-assembled nanometer silicon dots"Applied Physics Letters. 73. 3881-3883 (1998)

S.A.Ding：“自组装纳米硅点中的量子限制效应”应用物理快报。

A.Kohno: "Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures"Ext.Abs.of the 1998 Int.Conf.on Solid State Deices and Materials. 174-175 (1998)

A.Kohno：“单电子对 MOS 结构中的硅量子点浮栅充电”1998 年固态器件和材料国际会议的 Ext.Abs.。

香野淳: "シリコン量子ドットフローティングゲートMOS構造の電子注入とメモリ機能"信学技報. 103-108 (2001)

Jun Kono：“硅量子点浮栅MOS结构的电子注入和存储功能”IEICE技术报告103-108（2001）。

Astushi Kohno: "Single Electron Charging to a Si Quantum Dot Floating Gate in MOS Structures" Extende Abstracts of the 1998 Intern.Conf.on Solid State Devices and Materials. 174-175 (1998)

Astushi Kohno：“单电子对 MOS 结构中的硅量子点浮栅充电”扩展了 1998 年 Intern.Conf.on Solid State Devices and Materials 的摘要。

Seiichi Miyazaki: "Self-Assembling of Sl Quantum Dots and Its Application to Floating Gate Memory(invited)" Proc.of Intern.Microprocesses and Nanotechnology Conf.(1999)

宫崎精一：“Sl量子点的自组装及其在浮栅存储器中的应用（特邀）”Proc.of Intern.Microprocesses and Nanotechnology Conf.(1999)