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Control of Electronic Properties of One-Dimensionally Self-Aligned Si-Ge based Quantum Dots and Its Electroluminescence

Control of Electronic Properties of One-Dimensionally Self-Aligned Si-Ge based Quantum Dots and Its Electroluminescence
一维自对准Si-Ge基量子点的电子性质控制及其电致发光
批准号:
21246053
负责人:
MIYAZAKI Seiichi
金额:
$15.72万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2011

项目摘要

项目成果

MIYAZAKI Seiichi的其他基金

相关文献

中文摘要
翻译
通过控制纯SiH4和/或Si2H6的低压化学气相沉积(LPCVD),用5%的GeH4和He稀释的选择性Ge LPCVD,点的热氧化和Ge氧化物的热脱附,在超薄的SiO_2上成功地制备了自对准的硅基量子点(Si-QD)。在这种自对准的半透明自对准金栅二极管中,当载流子从n-Si(100)衬底注入自对准的硅量子点时,当载流子从金顶电极注入电子和从金顶电极注入空穴时,可以观察到室温下近红外区的电致发光(EL),在Au顶电极的正偏压下电流增加到低至~1.2V的阈值电压。注意,在面上点密度为~10^lt;13;cm;-2的情况下,在相同电流密度下,EL阈值电压降低到~10^;lt;11;cm;-2>的~60%,发射强度显著增强约425倍。这不仅是自对准结构中辐射复合速率增加的明显证据,而且由于电流泄漏随着点密度的增加而减少,复合效率也因此而提高。
英文摘要
Self-aligned Si-based quantum dots(Si-QDs) have been successfully fabricated on ultrathin SiO_2 by controlling low-pressure chemical vapor deposition(LPCVD) using pure SiH_4 and/or Si_2H_6, selective Ge LPCVD from 5% GeH_4 diluted with He, thermal oxidation of the dots and subsequent thermal desorption of Ge oxide. In semitransparent Au-gate diodes with self-aligned dots so-prepared, when carriers were injected to the self-aligned Si-QDs from the n-Si(100) substrate for electrons and from the Au top electrode for holes, electroluminescence(EL) in the near-infrared region at room temperature becomes observable with an increase in current at positive biases over a threshold voltage as low as~ 1. 2 V at the Au top electrode. Note that, in the case of an areal dot density of ~10^<13> cm^<-2>, the EL threshold voltage was reduced down to~ 60% of that of ~10^<11> cm^<-2> and emission intensity was enhanced markedly by a factor of ~425 in comparison with the case of ~10^<11> cm^<-2> under the same current density. This is clear evidence of not only an increase in radiative recombination rate in the self-aligned structure but also an improvement of recombination efficiency due to a decrease in current leakage with increasing dot density.
期刊论文(140)
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会议论文
Collective Tunneling Model between Two-Dimensional Electron Gas to Si-Nano Dot
二维电子气与硅纳米点的集体隧道模型
DOI: --
发表时间: 2011
期刊: AIP Conference Series
影响因子: --
作者: [M.Muraguchi, Y.Sakurai, Y.Takada, S.Nomura, K.Shiraishi, K.Makihara, M.Ikeda, S.Miyazaki, Y.Shigets, T.Endoh]
通讯作者: T.Endoh
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [寺本慶之, 小野亮, 小田哲治, 牧原克典]
通讯作者: 牧原克典
XPS Study of Interfacial Reaction between Metal and Ge Oxide
金属与Ge氧化物界面反应的XPS研究
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [李俊錫, 古阪秀三, A.Ohta]
通讯作者: A.Ohta
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [Takumi Uezono, Tomoyuki Takahashi, Michihiro Shintani, Kazumi Hatayama, Kazuya Masu, Hiroyuki Ochi, Takashi Sato, Tingyu An and Tsunemi Watanabe, 牧原克典,池田弥央,山根雅人,東清一郎,宮崎誠一]
通讯作者: 牧原克典,池田弥央,山根雅人,東清一郎,宮崎誠一
共 112 条
    Integration of silicon-based nano-scalestructure and its functional memory device application
    • 批准号:
      18063017
    • 项目类别:
      Grant-in-Aid for Scientific Research on Priority Areas
    • 资助金额:
      $69.82万
    • 财政年份:
      2006
    • 负责人:
      MIYAZAKI Seiichi
    • 依托单位:
    The fabrication of super atom structure using Si based self-assembled quantum dots and its electron state control
    • 批准号:
      15206035
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $31.37万
    • 财政年份:
      2003
    • 负责人:
      MIYAZAKI Seiichi
    • 依托单位:
    Control of Silicon quantum structures and its application to room-temperature device operation
    • 批准号:
      10305026
    • 项目类别:
      Grant-in-Aid for Scientific Research (A).
    • 资助金额:
      $23.42万
    • 财政年份:
      1998
    • 负责人:
      MIYAZAKI Seiichi
    • 依托单位:
    Determination of Energy Distribution of Defect State Density for Ultrathin SiO_2/Si Interfaces by Using Photoelectron Yield Spectroscopy
    • 批准号:
      08455147
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $4.35万
    • 财政年份:
      1996
    • 负责人:
      MIYAZAKI Seiichi
    • 依托单位: