Integration of silicon-based nano-scalestructure and its functional memory device application

在超薄Ni薄膜形成后，利用硅量子点的自组装形成和未外加加热的远程H2等离子体促进硅量子点的硅化，制备了由硅化镍纳米点和硅量子点组成的杂化纳米点结构，并将其应用于MOS（金属氧化物半导体）电容器的浮栅中。混合纳米点FG的电荷存储能力归因于ni -硅化物纳米点的深电位阱，脉冲栅偏置测量的电荷注入特性可以解释为通过Si-QDs的离散能态向ni -硅化物纳米点注入和发射的多步电子。

With a combination of self-assembling formation of Si-quantum dots (QDs) and the silicidation of pre-grown Si-QDs promoted with an exposure to remote H2 plasma without external heating after ultrathin Ni film formation, a hybrid nanodots structure consisting of Ni-silicide nanodots and Si-QDs was fabricated and applied to a floating gate in MOS (Metal-Oxide-Semiconductor) capacitors. The charge storage capacity of the hybrid nanodots FG is attributable to a deep potential well of the Ni-silicide nanodots, and the charge injection characteristics measured with applications of pulsed gate biases can be interpreted in terms of multistep electron injection to and emission from the Ni-silicide nanodots through the discrete energy states of the underlying Si-QDs.