Interaction between terahertz photons and electron waves in quantum structures and its application to ultra-high frequency devices

量子结构中太赫兹光子与电子波的相互作用及其在超高频器件中的应用

• 批准号: 15206038
• 负责人: ASADA Massahiro
• 金额: $ 25.63万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15206038/
• 关键词: terahertz devices; resonant tunneling structures; metal-insulator-semiconductor quantum structures; CaF2; CdF2; Si; CoSi2; nano-area local epitaxy; integrated terahertz antennas; terahertz harmonic oscillation; 集積テラヘルツアンテナ; 高調波テラヘルツ発振; ナノ領域エピタ

This research aimed at realization of a novel three-terminal electron device based on photon-assisted tunneling and beat of transit electron waves for amplification of undeveloped terahertz frequency range. The results obtained are as follows.Semiconductor-insulator and semiconductor-metal-insulator heterostructure systems (CaF2/CdF2/Si and CoSi2/CaF2/Si) were chosen for the materials of the terahertz devices, and epitaxial growth and device formation are investigated. These material systems are advantageous in the view point of high potential barrier and resulting formation of sharp quantum levels which are convenient for high speed response. By the development of epitaxial growth technique including nano-area local epitaxy and optimized annealing conditions, resonant tunneling diodes (RTDs) with CaF2/CdF2/Si on Si(100) substrate were fabricated and operated with extremely high peak-valley ratio of 10^6 at room temperature for the first time.A planar device with two-dimensional electr … More on gas in semiconductor layer structure, which is a basic part of the proposed three-terminal terahertz device, was fabricated to confirm the principle operation of the proposed device. The operation in the millimeter wavelength range was in agreement with theoretical prediction. The operation even in the terahertz range was also expected form this result.Together with the above researches, integrated terahertz device structure composed of RTDs and small-size terahertz antennas is proposed. As the first step to apply this structure to metal-insulator-semiconductor heterostructures, RTDs with semiconductor heterosturcutre was fabricated and integrated with small-size planar antennas. This device oscillated at 1.02THz with harmonic oscillation mode at room temperature. This is the highest frequency record, as well as the first over-1THz frequency, of a room-temperature single electronic oscillator to date, although it is the harmonic oscillation. Further more, it was also shown that oscillation over 2THz with fundamental frequency mode was feasible with the optimization of the device structure. These results showed not only that even semiconductor RTD with this structure can be a candidate for compact and coherent terahertz sources but also that this structure of integration can be applied to the proposed terahertz device with metal-insulator-semiconductor system. Less

本研究旨在实现一种基于光子辅助隧穿和传输电子波的新型三端电子器件，用于放大未开发的太赫兹频率范围。所得结果如下：选择了半导体-绝缘体和半导体-金属-绝缘体异质结构体系（CaF2/CdF2/Si和CoSi2/CaF2/Si）作为太赫兹器件的材料，并研究了外延生长和器件形成。这些材料体系的优点是具有高势垒和由此形成的尖锐量子能级，便于高速响应。通过纳米区域局部外延生长技术的发展和优化退火条件，在Si（100）衬底上制备了CaF2/CdF2/Si谐振隧道二极管（rtd），并首次在室温下实现了10^6的峰谷比。为了验证所提出的三端太赫兹器件的工作原理，制作了一个具有二维电-气-半导体层结构的平面器件，该器件是三端太赫兹器件的基本组成部分。在毫米波范围内的操作与理论预测一致。甚至在太赫兹范围内的操作也有望从这个结果中得到。结合上述研究，提出了由rtd和小尺寸太赫兹天线组成的集成太赫兹器件结构。作为将该结构应用于金属-绝缘体-半导体异质结构的第一步，制作了具有半导体异质结构的rtd，并将其与小尺寸平面天线集成。该器件在室温下以谐波振荡模式在1.02THz下振荡。这是迄今为止室温单电子振荡器的最高频率记录，也是第一个超过1thz的频率，尽管它是谐波振荡。此外，通过对器件结构的优化，还证明了以基频模式在2THz上振荡是可行的。这些结果表明，这种结构的半导体RTD不仅可以成为紧凑和相干太赫兹源的候选器件，而且这种集成结构可以应用于金属-绝缘体-半导体系统的太赫兹器件。少

项目成果

M.Asada: "Proposal and Analysis of a Travelling-Wave Amplifier in Terahertz Range Using Two-Dimensional Electron Gas"Japanese Journal of Applied Physics. 42(掲載予定). (2004)

M.Asada：“使用二维电子气体的太赫兹范围行波放大器的提议和分析”日本应用物理学杂志42（即将出版）。

Increase in Drive Current by Pt/W Protection on Short-Channel Schottky Source/Drain Metal-Oxide-Semiconductor Field-Effect Transistors with Metal Gate

通过对带金属栅极的短沟道肖特基源极/漏极金属氧化物半导体场效应晶体管进行 Pt/W 保护来增加驱动电流

• 发表时间: 2004
• 期刊: Japanese Journal of Applied Physics 43・9A
• 作者: H.Sato;H.Sato;T.Iguchi;M.Asada
• 通讯作者: M.Asada

共鳴トンネル構造における光支援トンネルとテラヘルツデバイス

谐振隧道结构中的光辅助隧道和太赫兹器件

• 发表时间: 2005
• 期刊: 応用物理 74・5
• 作者: S.Watanabe;A.B.M.H.Rashid;T.Kikkawa;浅田雅洋
• 通讯作者: 浅田雅洋

Proposal and Analysis of a Semiconductor Klystron Device for Terahertz Range Using Two-Dimensional Electron Gas

使用二维电子气的太赫兹范围半导体速调管装置的提议和分析

• 发表时间: 2004
• 期刊: Japanese Journal of Applied Physics 43・9A
• 作者: S.Watanabe;K.Kimoto;T.Kikkawa;M.Fujiu et al.;Yasuo Cho;Eunju Lim 他3名;M.Asada
• 通讯作者: M.Asada

テラヘルツ発振素子

太赫兹振荡元件

• 发表时间: 2005