A STUDY ON SOI QUANTUM DEVICES WITH VARIABLE FUNCTION BY RESONANT/NON-RESONANT CONTROL IN VERTICAL RESONANT TUNNELING STRUCTURES

垂直谐振隧道结构中谐振/非谐振控制的可变功能SOI量子器件研究

基本信息

  • 批准号:
    10450123
  • 负责人:
  • 金额:
    $ 9.02万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
  • 财政年份:
    1998
  • 资助国家:
    日本
  • 起止时间:
    1998 至 2000
  • 项目状态:
    已结题

项目摘要

A program simulating current-voltage characteristics through tunneling probability calculation of electrons using successive step approximation of energy barriers has been developed so as to design silicon/silicon dioxide double barriers structures, and current-voltage characteristics of double barriers structures at temperatures, and particularly at room temperature, have been simulated. Energy barrier heights at the silicon-silicon dioxide interface of metal-oxide-semiconductor (MOS) diodes fabricated have been measured by internal photoemission, and energy barrier heights of ultrathin silicon dioxide films have been determined for the first time. An thermal oxidation technology forming ultrathin silicon dioxide films with high electrical insulating performance and reliability has been developed in order to realize quantum devices with silicon/silicon dioxide double barriers structures, and the controllability of tunneling current has been enhanced because leak current through MOS diodes with an ultrathin silicon dioxide film can be decreased by the precise control of oxide growth during wafer heating-up processes. The analysis of current-voltage characteristics of MOS diodes fabricated using the simulation program has suggested that the energy barrier height of a silicon dioxide film for the tunneling of electrons is lowered as the film is thin in the ultrathin regime. A technology bonding one wafer covered with an ultrathin silicon dioxide film to another wafer has been developed to fabricate the vertical structure of silicon/silicon dioxide double barriers, and silicon-on-insulator substrates with the buried oxide of an ultrathin silicon dioxide film have been prepared.
为了设计硅/二氧化硅双势垒结构,编制了用逐级势垒近似计算电子隧穿几率来模拟电流-电压特性的程序,并模拟了双势垒结构在温度下,特别是室温下的伏安特性。用内光电子能谱方法测量了金属-氧化物-半导体(MOS)二极管在硅-二氧化硅界面的势垒高度,并首次测定了超薄二氧化硅薄膜的势垒高度。为了实现硅/二氧化硅双势垒结构的量子器件,开发了一种热氧化技术来形成具有高电绝缘性能和可靠性的超薄二氧化硅薄膜,并通过精确控制晶片加热过程中氧化物的生长来降低通过超薄二氧化硅薄膜的MOS二极管的泄漏电流,从而提高了隧道电流的可控性。利用模拟程序对MOS二极管的电流-电压特性进行了分析,结果表明,在超薄区,由于二氧化硅薄膜较薄,电子隧穿的势垒高度较低。为了制作硅/二氧化硅双势垒的垂直结构,开发了一种将一个覆盖着超薄二氧化硅薄膜的晶片与另一个晶片粘接的技术,并制备了具有超薄二氧化硅薄膜埋层氧化物的绝缘体上硅衬底。

项目成果

期刊论文数量(36)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
M.Yoshimi,S.Maegawa,T.Tsuchiya,M.Morita,K.Demizu,and T.Ohmi: "Evaluation of SOI Wafer Quality and Technological Issues to be Solved"Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials. 352-353 (1999)
M.Yoshimi、S.Maekawa、T.Tsuchiya、M.Morita、K.Demizu 和 T.Ohmi:“SOI 晶圆质量评估和要解决的技术问题”1999 年国际固态器件和半导体会议的扩展摘要
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
T.Matsunaga, N.Hirashita, T.Jinbo, M.Matsuura, M.Morita, I.Nishiyama, M.Nishizuka, H.Okumura, A.Shimazaki, and N.Yabumoto: "MS-FrM4 Standard Practice for Temperature Calibration of the Silicon Substrate in Temperature Programmed Desorption Analysis"Abstra
T.Matsunaga、N.Hirashita、T.Jinbo、M.Matsuura、M.Morita、I.Nishiyama、M.Nishizuka、H.Okumura、A.Shimazaki 和 N.Yabumoto:“MS-FrM4 温度校准标准实践
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
M.Morita,K.Nsimura,S.Urabe: "Si Oxidation in Heating-up for Gate Oxide Formation" International Symposium on Future of Intellectual Integrated Electronics. (1999)
M.Morita、K.Nsimura、S.Urabe:“栅极氧化物形成加热过程中的硅氧化”智能集成电子未来国际研讨会。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
K.NISHIMURA,S.URABE and M.MORITA: "Oxidation Control of Si(100)Surface in Heating-up Process"Precision Science and technology for Perfect Surface. 421-425 (1999)
K.NISHIMURA、S.URABE、M.MORITA:“Si(100)表面加热过程中的氧化控制”完美表面精密科学与技术。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Mizuho Morita: "Ultraclean Surface Processing of Silicon Wafers"Springer. 543-558 (1998)
Mizuho Morita:“硅晶圆的超洁净表面处理”施普林格。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ monograph.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ sciAawards.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ conferencePapers.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ patent.updateTime }}

MORITA Mizuho其他文献

MORITA Mizuho的其他文献

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

{{ truncateString('MORITA Mizuho', 18)}}的其他基金

A STUDY OF TUNNEL ELECTRON INJECTION LIGHT-EMITTING DEVICES WITH A TWO-DIMENSIONAL QUANTUM STRUCTURE OF ULTRATHIN SILICON/SILICON DIOXIDE
超薄硅/二氧化硅二维量子结构隧道电子注入发光器件的研究
  • 批准号:
    26630130
  • 财政年份:
    2014
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
FORMATION OF THREE-DIMENSIONAL SHAPES IN SEMICONDUCTOR SURFACES FOR FUNCTIONAL DEVICES THROUGH PHOTOCHEMICAL REACTION WITH ELECTROPHILIC FLUORINATION AGENTS
通过与亲电氟化剂的光化学反应在功能器件的半导体表面形成三维形状
  • 批准号:
    26289017
  • 财政年份:
    2014
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A STUDY OF LIGHT-EMITTING DEVICES WITH AN ULTRATHIN SILICON/SILICON DIOXIDE TWO-DIMENSIONAL QUANTUM STRUCTURE
超薄硅/二氧化硅二维量子结构发光器件的研究
  • 批准号:
    23656217
  • 财政年份:
    2011
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
A STUDY ON ELECTRIC CHARGE/LEVEL CHARACTERIZATION DEVICES FOR BIOLOGICAL MATERIALS WITH METAL/MICRO-GAP/SEMICONDUCTOR ARRAYS
金属/微间隙/半导体阵列生物材料电荷/液位表征装置的研究
  • 批准号:
    22360125
  • 财政年份:
    2010
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A STUDY ON ENERGY LEVEL CHARACTERIZATION DEVICES FOR BIOLOGICAL MATERIALS BY ELECTRON RESPONSE OF METAL/MICRO-GAP/SEMICONDUCTOR STRUCTURES
金属/微间隙/半导体结构电子响应生物材料能级表征装置的研究
  • 批准号:
    18360148
  • 财政年份:
    2006
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A STUDY ON TUNNELING-SPECTROSCOPIC DEVICES WITH NANO-GAP STRUCTURE USING ULTRATHIN SILICON DIOXIDE FILM AS A SPACER
超薄二氧化硅薄膜作为间隔物的纳米间隙结构隧道分光器件的研究
  • 批准号:
    14350166
  • 财政年份:
    2002
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A STUDY ON REACTION MECHANISM CONTROL UNDER LIGHT IRRADIATION IN ULTRACLEAN CLEANING OR HEATING PROCESSES OF SILICON SURFACES
硅表面超净清洗或加热过程中光照射反应机理控制研究
  • 批准号:
    13555007
  • 财政年份:
    2001
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
A STUDY ON REACTION CONTROL BETWEEN SILICON SURFACES AND OXYGEN-FREE WATER/WATER-FREE OXYGEN IN COMPLETELY CLOSED SYSTEMS
全封闭系统中硅表面与无氧水/无水氧反应控制的研究
  • 批准号:
    10555009
  • 财政年份:
    1998
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B).
A STUDY OF ANALYSIS AND CONTROL OF SEMICONDUCTOR SURFACE REACTION BY SURFACE CARRIER CONDUCTION MODULATION
表面载流子传导调制半导体表面反应分析与控制研究
  • 批准号:
    04452166
  • 财政年份:
    1992
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
A Development of Low-Temperature Silicon Oxidation Enhanced by Fluorine Catalysis
氟催化低温氧化硅的研究进展
  • 批准号:
    60850061
  • 财政年份:
    1985
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research

相似海外基金

Statistical process control for semiconductor process
半导体工艺的统计过程控制
  • 批准号:
    25750120
  • 财政年份:
    2013
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Grant-in-Aid for Young Scientists (B)
Three-dimensional stress and Si-Ge interdiffusion modeling for semiconductor process simulation software CSUPREM
半导体工艺仿真软件 CSUPREM 的三维应力和 Si-Ge 相互扩散建模
  • 批准号:
    396181-2010
  • 财政年份:
    2011
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Collaborative Research and Development Grants
Three-dimensional stress and Si-Ge interdiffusion modeling for semiconductor process simulation software CSUPREM
半导体工艺仿真软件 CSUPREM 的三维应力和 Si-Ge 相互扩散建模
  • 批准号:
    396181-2010
  • 财政年份:
    2010
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Collaborative Research and Development Grants
Development and application of totally low-temperature semiconductor process using atmospheric-pressure plasma
常压等离子体全低温半导体工艺的开发与应用
  • 批准号:
    19206018
  • 财政年份:
    2007
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
SBIR Phase II: A Trace Contaminant Sensor for Semiconductor Process Gases
SBIR 第二阶段:用于半导体工艺气体的痕量污染物传感器
  • 批准号:
    9983349
  • 财政年份:
    2000
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Standard Grant
Robust and Scalable On-Line NDP Designs and Applications to Semiconductor Process Optimization
稳健且可扩展的在线 NDP 设计及其在半导体工艺优化中的应用
  • 批准号:
    0002098
  • 财政年份:
    2000
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Standard Grant
Development of highly sensitive analysis technique for semiconductor process induced contamination impurities
开发半导体工艺引起的污染杂质的高灵敏度分析技术
  • 批准号:
    11694157
  • 财政年份:
    1999
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
SBIR Phase I: A Trace Contaminant Sensor for Semiconductor Process Gases
SBIR 第一阶段:用于半导体工艺气体的痕量污染物传感器
  • 批准号:
    9860484
  • 财政年份:
    1999
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Standard Grant
Grid Optimization and Adaptation in Semiconductor Process and Device Problems
半导体工艺和器件问题中的网格优化和适应
  • 批准号:
    9412475
  • 财政年份:
    1995
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Standard Grant
On-Line Analysis of Trace Heavy Metals in Semiconductor Process Liquid Using an Ultramicroelectrode (UME) System
使用超微电极 (UME) 系统在线分析半导体工艺液体中的痕量重金属
  • 批准号:
    9461869
  • 财政年份:
    1995
  • 资助金额:
    $ 9.02万
  • 项目类别:
    Standard Grant
{{ showInfoDetail.title }}

作者:{{ showInfoDetail.author }}

知道了