Development of Quantum Integrated Hardwares based on Semiconductor Nanowires
Development of Quantum Integrated Hardwares based on Semiconductor Nanowires
批准号:
19206031
负责人:
MOTOHISA Junichi
金额:
$30.45万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2007
资助国家:
日本
项目状态:
已结题
起止时间:
2007 至 2009
中文摘要
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英文摘要
We developed a formation method of high-density and highly uniform array of semiconductor nanowires to realize quantum integrated hardwares. In particular, fabrication and characterization of nanowire field-effect transistors (FETs) were charried out, and vertical nanowire FETs on Si substrates were demonstrated. We also proposed vertically-integrated logic circuits based on vertical FETs and investigated a method to laterally align nanowires for their high-density integration.
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DOI:
10.1143/jjap.46.l1102
发表时间:
2007-11
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[K. Tomioka;J. Motohisa;S. Hara;T. Fukui]
通讯作者:
K. Tomioka;J. Motohisa;S. Hara;T. Fukui
III-V semiconductor nanowires and nanotubes grown by selective area metalorganic vapor phase epitaxy
选区金属有机气相外延生长的 III-V 族半导体纳米线和纳米管
DOI:
--
发表时间:
2007
期刊:
影响因子:
--
作者:
[J. Motohisa, T. Fukui, and S. Hara]
通讯作者:
and S. Hara
Electrical Characterizations of InGaAs Nanowire top-gate Field-effect-Transistors by using Selective-area MOVPE
使用选择性区域 MOVPE 表征 InGaAs 纳米线顶栅场效应晶体管
DOI:
--
发表时间:
2007
期刊:
Jpn. J. Appl. Phys 46
影响因子:
--
作者:
[J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka, T. Fukui]
通讯作者:
T. Fukui
Vertical III-V Nanowire Growth on Si Substrate by Selective-Area MOVPE
通过选择性区域 MOVPE 在硅衬底上垂直生长 III-V 纳米线
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[K. Tomioka, et.al.]
通讯作者:
et.al.
Competitive Growth Process of Tetrahedrons and Hexagons during GaAs? Nanowire Formation by Metal-Organic Vapor Phase Epitaxy
GaAs 期间四面体和六边形的竞争生长过程?
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[K. Hiruma, et.al.]
通讯作者:
et.al.
共 74 条
Fabrication of nanowire-based light emitting nanodevices
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批准号:24360114
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$12.06万
-
财政年份:2012
-
负责人:MOTOHISA Junichi
-
依托单位:
Exploration of novel materials for photochemical water splitting based on semiconductor nanowires and nanostructures
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批准号:24656196
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.58万
-
财政年份:2012
-
负责人:MOTOHISA Junichi
-
依托单位:
Fabrication of Photonic Crystals by Selective-Area Metalorganic Vapor Phase Epitaxy and Their Application to Devices
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批准号:15206030
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$32.12万
-
财政年份:2003
-
负责人:MOTOHISA Junichi
-
依托单位:
Formation of Photonic Crystals by Selective Area Growth and Their Applications
-
批准号:12450117
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$7.81万
-
财政年份:2000
-
负责人:MOTOHISA Junichi
-
依托单位:
Fabrication of Ultrasmall Compound Semiconductor Nanostructures with Controlled Interfaces and Characterization of Their Electronic Properties
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批准号:06452208
-
项目类别:Grant-in-Aid for General Scientific Research (B)
-
资助金额:$4.54万
-
财政年份:1994
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负责人:MOTOHISA Junichi
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依托单位: