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Development of Quantum Integrated Hardwares based on Semiconductor Nanowires

Development of Quantum Integrated Hardwares based on Semiconductor Nanowires
基于半导体纳米线的量子集成硬件的开发
批准号:
19206031
负责人:
MOTOHISA Junichi
金额:
$30.45万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2007
资助国家:
日本
项目状态:
已结题
起止时间:
2007 至 2009

项目摘要

项目成果

MOTOHISA Junichi的其他基金

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中文摘要
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英文摘要
We developed a formation method of high-density and highly uniform array of semiconductor nanowires to realize quantum integrated hardwares. In particular, fabrication and characterization of nanowire field-effect transistors (FETs) were charried out, and vertical nanowire FETs on Si substrates were demonstrated. We also proposed vertically-integrated logic circuits based on vertical FETs and investigated a method to laterally align nanowires for their high-density integration.
期刊论文(88)
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会议论文
DOI: 10.1143/jjap.46.l1102
发表时间: 2007-11
期刊: Japanese Journal of Applied Physics
影响因子: 1.5
作者: [K. Tomioka;J. Motohisa;S. Hara;T. Fukui]
通讯作者: K. Tomioka;J. Motohisa;S. Hara;T. Fukui
III-V semiconductor nanowires and nanotubes grown by selective area metalorganic vapor phase epitaxy
选区金属有机气相外延生长的 III-V 族半导体纳米线和纳米管
DOI: --
发表时间: 2007
期刊:
影响因子: --
作者: [J. Motohisa, T. Fukui, and S. Hara]
通讯作者: and S. Hara
Electrical Characterizations of InGaAs Nanowire top-gate Field-effect-Transistors by using Selective-area MOVPE
使用选择性区域 MOVPE 表征 InGaAs 纳米线顶栅场效应晶体管
DOI: --
发表时间: 2007
期刊: Jpn. J. Appl. Phys 46
影响因子: --
作者: [J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka, T. Fukui]
通讯作者: T. Fukui
Vertical III-V Nanowire Growth on Si Substrate by Selective-Area MOVPE
通过选择性区域 MOVPE 在硅衬底上垂直生长 III-V 纳米线
DOI: --
发表时间: 2008
期刊:
影响因子: --
作者: [K. Tomioka, et.al.]
通讯作者: et.al.
74
    Fabrication of nanowire-based light emitting nanodevices
    • 批准号:
      24360114
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $12.06万
    • 财政年份:
      2012
    • 负责人:
      MOTOHISA Junichi
    • 依托单位:
    Exploration of novel materials for photochemical water splitting based on semiconductor nanowires and nanostructures
    • 批准号:
      24656196
    • 项目类别:
      Grant-in-Aid for Challenging Exploratory Research
    • 资助金额:
      $2.58万
    • 财政年份:
      2012
    • 负责人:
      MOTOHISA Junichi
    • 依托单位:
    Fabrication of Photonic Crystals by Selective-Area Metalorganic Vapor Phase Epitaxy and Their Application to Devices
    • 批准号:
      15206030
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $32.12万
    • 财政年份:
      2003
    • 负责人:
      MOTOHISA Junichi
    • 依托单位:
    Formation of Photonic Crystals by Selective Area Growth and Their Applications
    • 批准号:
      12450117
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $7.81万
    • 财政年份:
      2000
    • 负责人:
      MOTOHISA Junichi
    • 依托单位: