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Fabrication of Photonic Crystals by Selective-Area Metalorganic Vapor Phase Epitaxy and Their Application to Devices

选择性区域金属有机气相外延制备光子晶体及其在器件中的应用

基本信息

批准号：
15206030
负责人：
MOTOHISA Junichi
金额：
$ 32.12万
依托单位：
HOKKAIDO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2005
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15206030/
关键词：
Photonics Crystals MOVPE Growth Selective Area Growth Photonics Crystal Slabs Photoluminescence Light Extraction Efficiency Point Line defect Photonic Bands 線欠陥導波路点欠陥共振器 whispering gallery mode

项目摘要

We have established a method to fabricate two-dimensional crystals (2D-PhCs) and 2D-PhC slabs (2D-PhCs) by utilizing selective area metalorganic vapor phase epitaxial (SA-MOVPE) and investigated their optical properties. By doing SA-MOVPE growth on GaAs (111)B or InP(111)B substrates partially covered with periodic array of hexagonal masks, we have fabricated air-hole array of GaAs- and InP-based semiconductors. If the SA-MOVPE is carried out on sacrificial AIGaAs layer, For GaAs-based 2D-PhCs, we have succeeded in the fabrication of air-bridge-type 2D-PhCs and 2D-PhCs with line-defect and point-defect structures. We also have succeeded in the formation of GaAs/AlGaAs quantum wells with periodic air-holes and confirmed their photoluminescence (PL). InP- based 2D-PhCs with period of 400-500nm were also successfully formed after optimization of growth conditions. Emission from InP/InGaAs quantum well structures embedded in 2D-PhC was also fabricated and their optical properties were inve … More stigated PL, demonstrated that this structure is promising for the application of photonic devices operating in the optical-fiber communication wavelength. In addition, GaAs- and InP- based 2D-PhCs constructed from periodic array of hexagonal pillar arrays were also fabricated by SA-MOVPE on (111)B GaAs and (111)A InP substrates, respectively, where array of circular mask opening are defined. In particular, for GaAs-based pillar-type 2D-PhCs, it was found that the light emission from GaAs/AIGaAs quantum wells formed on the top of the pillars is found to dependent on the pitch of the pillar arrays and is enhanced by factor of 10 as compared to the reference planar structure. This phenomenon is qualitatively understood by the enhancement of light-extraction efficiency originating from the formation of photonic bandstructure by the introduction of the periodic structure on the top of high-index slabs. The optical properties 2D-PhCs and 2D-PhCSs, such as photonic bandstructures, dispersion of line-defect waveguides, transmittance and reflectivity, are also investigated theoretically using finite-difference-time-domain method, plane-wave expansion method, and scattering matrix method to understand the optical properties of 2D-PhCs and 2D-PhCSs, including a proposal of modified effective index method applicable to 2D-PhCs with high index contrasts. Less

我们建立了一种利用选择性区域金属有机气相外延（SA-MOVPE）制备二维晶体（2D-PhCs）和二维平板（2D-PhCs）的方法，并研究了它们的光学性质。在GaAs（111）B或InP（111）B衬底上用周期性的六边形掩模阵列进行SA-MOVPE生长，制备了GaAs基和InP基半导体的空气孔阵列。如果SA-MOVPE是在牺牲AlGaAs层上进行的，对于GaAs基2D-PhCs，我们成功地制备了空气桥型2D-PhCs和具有线缺陷和点缺陷结构的2D-PhCs。我们还成功地形成了具有周期性空气孔的GaAs/AlGaAs量子威尔斯阱，并证实了它们的光致发光（PL）。在优化生长条件后，还成功地形成了周期为400- 500 nm的InP基二维光子晶体。制备了InP/InGaAs量子阱结构的发光器件，并对其光学特性进行了研究。 ...更多信息光致发光谱的研究表明，这种结构在光纤通信波长的光子器件中具有很好的应用前景。此外，还通过SA-MOVPE分别在（111）B GaAs和（111）A InP衬底上制备了由六边形柱阵列的周期阵列构成的GaAs和InP基2D-PhCs，其中限定了圆形掩模开口阵列。特别地，对于GaAs基柱型2D-PhCs，发现来自形成在柱顶部上的GaAs/AlGaAs量子威尔斯阱的光发射取决于柱阵列的节距，并且与参考平面结构相比增强了10倍。通过在高折射率板的顶部引入周期性结构来形成光子带结构，从而提高了光提取效率，从而定性地理解了这种现象。本文还利用时域有限差分法、平面波展开法和散射矩阵法对2D-PhCs和2D-PhCS的光学性质进行了理论研究，如光子能带结构、线缺陷波导的色散、透射率和反射率，以了解2D-PhCs和2D-PhCS的光学性质，包括适用于具有高折射率对比度的2D-PhCs的改进的有效折射率方法的建议。少