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Fabrication of Photonic Crystals by Selective-Area Metalorganic Vapor Phase Epitaxy and Their Application to Devices

Fabrication of Photonic Crystals by Selective-Area Metalorganic Vapor Phase Epitaxy and Their Application to Devices
选择性区域金属有机气相外延制备光子晶体及其在器件中的应用
批准号:
15206030
负责人:
MOTOHISA Junichi
金额:
$32.12万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2005

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中文摘要
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英文摘要
We have established a method to fabricate two-dimensional crystals (2D-PhCs) and 2D-PhC slabs (2D-PhCs) by utilizing selective area metalorganic vapor phase epitaxial (SA-MOVPE) and investigated their optical properties. By doing SA-MOVPE growth on GaAs (111)B or InP(111)B substrates partially covered with periodic array of hexagonal masks, we have fabricated air-hole array of GaAs- and InP-based semiconductors. If the SA-MOVPE is carried out on sacrificial AIGaAs layer, For GaAs-based 2D-PhCs, we have succeeded in the fabrication of air-bridge-type 2D-PhCs and 2D-PhCs with line-defect and point-defect structures. We also have succeeded in the formation of GaAs/AlGaAs quantum wells with periodic air-holes and confirmed their photoluminescence (PL). InP- based 2D-PhCs with period of 400-500nm were also successfully formed after optimization of growth conditions. Emission from InP/InGaAs quantum well structures embedded in 2D-PhC was also fabricated and their optical properties were inve … More stigated PL, demonstrated that this structure is promising for the application of photonic devices operating in the optical-fiber communication wavelength. In addition, GaAs- and InP- based 2D-PhCs constructed from periodic array of hexagonal pillar arrays were also fabricated by SA-MOVPE on (111)B GaAs and (111)A InP substrates, respectively, where array of circular mask opening are defined. In particular, for GaAs-based pillar-type 2D-PhCs, it was found that the light emission from GaAs/AIGaAs quantum wells formed on the top of the pillars is found to dependent on the pitch of the pillar arrays and is enhanced by factor of 10 as compared to the reference planar structure. This phenomenon is qualitatively understood by the enhancement of light-extraction efficiency originating from the formation of photonic bandstructure by the introduction of the periodic structure on the top of high-index slabs. The optical properties 2D-PhCs and 2D-PhCSs, such as photonic bandstructures, dispersion of line-defect waveguides, transmittance and reflectivity, are also investigated theoretically using finite-difference-time-domain method, plane-wave expansion method, and scattering matrix method to understand the optical properties of 2D-PhCs and 2D-PhCSs, including a proposal of modified effective index method applicable to 2D-PhCs with high index contrasts. Less
期刊论文(106)
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DOI: 10.1063/1.1593823
发表时间: 2003-07
期刊: Applied Physics Letters
影响因子: 4
作者: [P. Mohan;F. Nakajima;M. Akabori;J. Motohisa;T. Fukui]
通讯作者: P. Mohan;F. Nakajima;M. Akabori;J. Motohisa;T. Fukui
DOI: 10.1063/1.1697645
发表时间: 2004-04
期刊: Applied Physics Letters
影响因子: 4
作者: [P. Mohan;J. Motohisa;T. Fukui]
通讯作者: P. Mohan;J. Motohisa;T. Fukui
Growth of GaAs/AlGaAs hexiagonal pillars on GaAs (111)B surfaces by selective-area MOVPE
通过选择性区域 MOVPE 在 GaAs (111)B 表面生长 GaAs/AlGaAs 六角柱
DOI: --
发表时间: 2004
期刊: Physica E 3-4・23
影响因子: --
作者: [Ryusuke Yamauchi, Seiichi Hata, Junpei Sakurai, Akira Shimokohbe, Junichi Motohisa]
通讯作者: Junichi Motohisa
Photoluminescnce from single hexagonal nano-wire grown by selective area MOVPE
选择性区域 MOVPE 生长的单六角形纳米线的光致发光
DOI: --
发表时间: 2005
期刊: Inst. Phys. Conf. Ser. 184
影响因子: --
作者: [山本尊博, Shankar Devasenathipathy, 佐藤洋平, 菱田公一, S.Hara]
通讯作者: S.Hara
28
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    • 批准号:
      24360114
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $12.06万
    • 财政年份:
      2012
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      MOTOHISA Junichi
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    • 批准号:
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    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $30.45万
    • 财政年份:
      2007
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    Formation of Photonic Crystals by Selective Area Growth and Their Applications
    • 批准号:
      12450117
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $7.81万
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