Formation of Photonic Crystals by Selective Area Growth and Their Applications
Formation of Photonic Crystals by Selective Area Growth and Their Applications
批准号:
12450117
负责人:
MOTOHISA Junichi
金额:
$7.81万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2000
资助国家:
日本
项目状态:
已结题
起止时间:
2000 至 2002
中文摘要
我们已经开发了一种技术,以形成二维周期性阵列的六边形柱和空气孔结构的二维晶体(2DPC)的应用选择性区域金属有机气相外延(SA-MOVPE)生长。首先在部分覆盖SiO_2掩模的(111)B GaAs衬底上进行GaAs和AlGaAs的SA-MOVPE。掩模图案的圆形或六边形开口阵列被布置以实现周期性约为0.5μm的三角形晶格。通过优化生长条件,在掩模衬底上成功地生长出了由垂直{110}面组成的均匀六方柱阵列结构,可用作2DPC。在(111)B InP掩模衬底上也生长了类似的六边形InGaAs柱阵列,并且发现其表现出适合于使用InP基材料的2DPC的高光学质量。此外,通过生长具有六边形SiO_2掩模的三角形晶格掩模衬底,我们成功地生长了具有六边形空气孔阵列的GaAs 2DPC结构,并优化了生长条件以抑制横向过生长。此外,通过在AlGaAs(111)B表面生长空气孔型2DPC,并对AlGaAs进行选择性底切刻蚀,也成功地制备出了2DPC平板。最后,利用平面波展开法计算了由六边形空气孔阵列和六边形介质棒组成的二维光子晶体的光子带隙,并与传统的圆形空气孔和圆形介质棒组成的二维光子晶体的光子带隙进行了比较。虽然光子带隙的整体特征非常相似,但空气孔和棒的形状存在差异,特别是在正三角形晶格中的六边形空气孔阵列中,TM和TE带隙的重叠增强,这对实现二维全光子带隙是有效的。
英文摘要
We have developed a technique to form two-dimensional periodic array of hexagonal pillars and air-hole structures for the application of two-dimensional crystals (2DPCs) by selective area metalorganic vapor phase epitaxial (SA-MOVPE) growth. Firstly, SA-MOVPE of GaAs and AlGaAs was carried out on (111)B GaAs substrates partially covered with SiO_2 masks. Array of circular or hexagonal openings of the mask pattern was arranged to realize triangular lattice with periodicity of about 0.5μm. By optimizing the growth conditions, uniform array of hexagonal pillar structures consisting of vertical {110} facets was successfully grown on the masked substrates, which can be used as 2DPC. Similar array of hexagonal InGaAs pillars was also grown on (111)B InP masked substrates, and was found to exhibit high optical qualify suitable for 2DPCs using InP-based materials. In addition, by growing a masked substrate with hexagonal SiO_2 masks arranged to form triangular lattice, we succeeded in the growth of GaAs 2DPC structures with hexagonal air-hole arrays when the growth conditions were optimized to suppress lateral overgrowth. Furthermore, by growing air-hole type 2DPCs on AlGaAs (111)B surfaces and selective undercut etching of AlGaAs, 2DPC slab was also successfully fabricated. Finally, Photonic bands of 2DPCs consisting of hexagonal air-hole arrays or hexagonal dielectric rods were also calculated by using plane-wave expansion method, and they were compared with those consisting of conventional circular air-holes or circular rods. Although the overall features of the photonic bands quite looked alike, the discrepancy originating from the shape of air-holes and rods were found. Especially in hexagonal air-hole arrays in orthogonal-type triangular lattice, the enhancement of overlap between TM and TE gap demonstrated, which is effective to realize 2D full photonic bandgap.
期刊论文(73)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
Masashi Akabori: "Fabrication of Air-hole-type Two-dimensional Photonic Crystal Structures by Selective Area Metal-Organic Vapor Phase Epitaxy"Extended Abstract of the 19th Electronic Material Symposium. 115-118 (2000)
赤堀正志:《选择性区域金属有机气相外延法制备气孔型二维光子晶体结构》第十九届电子材料研讨会扩展摘要。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Masashi Akabori: "Formation of 0.5 πm-Period GaAs Network Structures for Two-Dimensional Photonic Crystals by Selective Area Metal-Organic Vapor Phase Epitaxy"2000 IEEE International Symposium on Compound Semiconductors. 191-196 (2001)
Masashi Akabori:“通过选择性区域金属有机气相外延形成二维光子晶体的 0.5 πm 周期 GaAs 网络结构”2000 年 IEEE 国际化合物半导体研讨会 191-196 (2001)。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
J.Takeda: "Formation of Al_xGa_1 _xAs Periodic Array of Micro Hexagonal Pillars and Air Holes by Selective Area Metal-Organic Vapor Phase Epitaxy"Corrected Abstracts of 8th International Conference on the Formation of Semiconductor Interfaces. 102 (2001)
J.Takeda:“通过选择性区域金属有机气相外延形成微型六角柱和气孔的Al_xGa_1_xAs周期阵列”更正了第八届半导体界面形成国际会议的摘要。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Junichi Motohisa: "Formation of nanoscale heterointerfaces by selective area metalorganic vapor-phase epitaxy and their applications"Applied Surface Science. 190・1-4. 184-190 (2002)
Junichi Motohisa:“通过选择性区域金属有机气相外延形成纳米级异质界面及其应用”应用表面科学190・1-4(2002)。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
J. Takeda, M. Akabori, J. Motohisa, T. Fukui: "Formation of Al_xGa_<1-x>As Periodic Array of Micro Hexagonal Pillars and Air Holes by Selective Area Metal-Organic Vapor Phase Epitaxy"Corrected Abstracts of 8th International Conference on the Formation of
J. Takeda、M. Akabori、J. Motohisa、T. Fukui:“通过选择性区域金属有机气相外延形成 Al_xGa_<1-x>As 周期性阵列的微六角柱和气孔”第 8 届国际会议更正摘要
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 42 条
Fabrication of nanowire-based light emitting nanodevices
-
批准号:24360114
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$12.06万
-
财政年份:2012
-
负责人:MOTOHISA Junichi
-
依托单位:
Exploration of novel materials for photochemical water splitting based on semiconductor nanowires and nanostructures
-
批准号:24656196
-
项目类别:Grant-in-Aid for Challenging Exploratory Research
-
资助金额:$2.58万
-
财政年份:2012
-
负责人:MOTOHISA Junichi
-
依托单位:
Development of Quantum Integrated Hardwares based on Semiconductor Nanowires
-
批准号:19206031
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$30.45万
-
财政年份:2007
-
负责人:MOTOHISA Junichi
-
依托单位:
Fabrication of Photonic Crystals by Selective-Area Metalorganic Vapor Phase Epitaxy and Their Application to Devices
-
批准号:15206030
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$32.12万
-
财政年份:2003
-
负责人:MOTOHISA Junichi
-
依托单位:
Fabrication of Ultrasmall Compound Semiconductor Nanostructures with Controlled Interfaces and Characterization of Their Electronic Properties
-
批准号:06452208
-
项目类别:Grant-in-Aid for General Scientific Research (B)
-
资助金额:$4.54万
-
财政年份:1994
-
负责人:MOTOHISA Junichi
-
依托单位:
海外基金