Development of nitride-semiconductor based green laser diodes on a novel semipolar plane

新型半极性面上氮化物半导体绿色激光二极管的开发

• 批准号: 19206036
• 负责人: FUNATO Mitsuru
• 金额: $ 29.87万
• 依托单位: Kyoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2007
• 资助国家: 日本
• 起止时间: 2007 至 2009
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-19206036/
• 关键词: 薄膜; 量子構造; 窒化物半導体; 緑色レーザ; 半極性結晶面; 発光効率; 偏光; 厚膜InGaN

Aiming to fabricate laser diodes based on InGaN/GaN quantum wells (QWs) on a novel semipolar (11-22) plane, crystal growth and optical characterization were performed. Growth conditions for each constituent layer have been established. As for optical anisotropy, the polarization was the TE polarization, independent of QW structures. It has been found for the first time that, when the In composition is less than 30%, the in-plane polarization was in the [1-100] direction, whereas, In compositions greater than 30% cause polarization switching to the [-1-123] direction.

为了在新型半极性(11-22)平面上制备基于InGaN/GaN量子阱(QW)的激光二极管，进行了晶体生长和光学特性研究。已经建立了每个组成层的生长条件。对于光学各向异性，偏振态为TE偏振态，与量子阱结构无关。首次发现，当In组分小于30%时，面内极化为[1-100]方向，而In组分大于30%时，面内极化向[-1-123]方向切换。

项目成果

Assessment and Modification of Recombination Dynamics in InxGa1-xN-Based Quantum Wells, Advances in Light Emitting Materials, Materials Science Forum

基于 InxGa1-xN 的量子阱中复合动力学的评估和修改，发光材料的进展，材料科学论坛

• 发表时间: 2008
• 作者: Y. Kawakami;A. Kaneta;M. Funato
• 通讯作者: M. Funato

Observation of optical gain spectra for ultra violet, violet, blue and aquamarine InGaN/InGaN quantum well laser diodes

紫外、紫色、蓝色和海蓝宝石 InGaN/InGaN 量子阱激光二极管的光学增益光谱观察

• 发表时间: 2007
• 作者: K. Kojima;M. Funato;and Y. Kawakami外4名
• 通讯作者: and Y. Kawakami外4名

Comparison between optical gain spectra of InxGa1-xN/In0. 02Ga0. 98N laser diodes emitting at 404 nm and 470 nm

InxGa1-xN/In0 的光学增益光谱比较。

• 发表时间: 2007
• 期刊: Phys. Stat. Sol. A 204
• 作者: K. Kojima;M. funato;Y. Kawakami;H. Braun;U.T. Schwarz;S. Nagahama;T. Mukai
• 通讯作者: T. Mukai

AlリッチAlGaN系量子井戸の光物性-InGaN系量子井戸と比較して-

富Al AlGaN基量子阱的光学特性-与InGaN基量子阱的比较-

• 发表时间: 2009
• 作者: 川上養一;船戸充
• 通讯作者: 船戸充

非極性面InGaN量子井戸レーザの光学特性

非极面InGaN量子阱激光器的光学特性

• 发表时间: 2008
• 作者: 小島一信;船戸充;川上養一;枡井真吾;長濱慎一;向井孝志
• 通讯作者: 向井孝志