Research on nano-scale semiconductor devices based on the electronic properties of atomic-scale silicon crystals

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The influences of the interface roughness, the dopant distribution fluctuation and the surface potential variability on the device performance of nano-scale Si-based semiconductor devices were investigated. As a result, a deep understanding of suppressing the statistical variability was obtained in both material and device levels. These results indicate the guideline for developing the future nano-scale semiconductor devices based on the electronic properties of atomic-scale silicon crystals.