Research of 3 Dimensional (3D) MOSFET's operation mechanism for future LSI

未来LSI的3维（3D）MOSFET工作机制研究

• 批准号: 08455158
• 负责人: ENDOH Tetsuo
• 金额: $ 4.99万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455158/
• 关键词: MOS Transistor; 3-Demensional MOS Transistor; Voltage Current Characteristics; Threshold Voltage; Mobility; MOSトランジスター; 3次元MOSトランジスター

(1) Study of operation mechanism for 3 dimensions (3D) metal oxide semiconductor (MOS) transistorWe analyzed operation mechanism of SGT type 3 D MOS transistors. Especially, we analyzed the dependence of the static 1-V characteristic for SGT type 3D MOS transistor on the device structure, for example, silicon pillar diameter, and gate oxide thickness. As a result, I was able to extract the construction parameters that are fixed performance of SGT type 3D MOS transistor.ConclusionsWith using these analysis results until this year, we propose new models of operation mechanism for SGT type MOS transistor. Especially, It was successful in formulations making the voltage-current characteristics of SGT type MOS transistor. As a result, we made clear the factors that limit operation speed, operation power and small size for a future 3D MOS transistor. The results are very important for a future LSI.

(1)三维(3D)金属氧化物半导体(MOS)晶体管工作机理研究分析了SGT型三维MOS晶体管的工作机理。重点分析了SGT型3DMOS晶体管的静态1-V特性与器件结构的关系，如硅柱直径、栅氧化层厚度等。结论基于到今年为止的分析结果，我们提出了SGT型MOS晶体管工作机理的新模型。特别是在制作SGT型MOS晶体管伏安特性的配方上取得了成功。因此，我们明确了限制未来3D MOS晶体管的运算速度、运算功率和尺寸的因素。研究结果对未来大规模集成电路的研究具有重要意义。

项目成果

遠藤哲郎: "完全空乏型Double-Gate SOI MOSFETの短チャネル効果の解析及びスケーリング理論の提案" 電気情報通信学会論文誌C-II. J82-C-II・No.2. 72-73 (1999)

Tetsuro Endo：“全耗尽双栅极 SOI MOSFET 的短沟道效应分析和缩放理论的建议”IEICE Transactions J82-C-II·No.2 (1999)。

Tetsuo ENDOH: "An Accurate Model of Fully-Depleted Surrounding Gate Transistor (FD-SGT)" IEICE TRANSACTIONS ON ELECTRONICS. E80-C,No.7. 905-910 (1997)

Tetsuo ENDOH：“全耗尽环栅晶体管 (FD-SGT) 的精确模型”IEICE 电子交易。

Tetsuo, ENDOH: "An Accurte Model of Fully-Depleted Surrounding Gate Transistor(FD-SGT)" IEICE TRANS.ELECTRON.E80-C・No.7. 905-910 (1997)

Tetsuo, ENDOH：“全耗尽环栅晶体管（FD-SGT）的精确模型”IEICE TRANS.ELECTRON.E80-C·No.7（1997）。

Tetsuo ENDOH: "An Analytic Steady-State Current-Voltage Characteristics of Short Channel Fully-Depleted Surrounding Gate Transistor(FD-SGT)" IEICE TRANSACTIONS ON ELECTRONICS. E80-C・No.7. 911-917 (1997)

Tetsuo ENDOH：“短沟道全耗尽环栅晶体管（FD-SGT）的稳态电流-电压特性分析”IEICE TRANSACTIONS ON ELECTRONICS（电子学报）E80-C·No.7（1997）。

Tetsuo ENDOH: "Analysis of short channel effects and proposal of scaling theory in Fully-Depleted Double-Gate SOI MOSFET" IEICE TRANSACTIONS ON ELECTRONICS C-II. J82-C-II,No.2. 72-73 (1999)

Tetsuo ENDOH：“全耗尽双栅 SOI MOSFET 中短沟道效应的分析和缩放理论的提出”IEICE TRANSACTIONS ON ELECTRONICS C-II。