Research of 3 Dimensional (3D) MOSFET's operation mechanism for future LSI

(1)三维金属氧化物半导体（MOS）晶体管工作机理研究分析了SGT型三维MOS晶体管的工作机理。特别地，我们分析了SGT型3D MOS晶体管的静态1-V特性与器件结构（如硅柱直径和栅极氧化物厚度）的关系。因此，我能够提取出固定性能的SGT型3D MOS晶体管的结构参数。结论利用这些分析结果，我们提出了SGT型MOS晶体管工作机理的新模型。特别成功地研制出了SGT型MOS晶体管的电压-电流特性。因此，我们明确了限制未来3D MOS晶体管的运算速度、运算功率和小尺寸的因素。研究结果对未来的大规模集成电路具有重要意义。

(1) Study of operation mechanism for 3 dimensions (3D) metal oxide semiconductor (MOS) transistorWe analyzed operation mechanism of SGT type 3 D MOS transistors. Especially, we analyzed the dependence of the static 1-V characteristic for SGT type 3D MOS transistor on the device structure, for example, silicon pillar diameter, and gate oxide thickness. As a result, I was able to extract the construction parameters that are fixed performance of SGT type 3D MOS transistor.ConclusionsWith using these analysis results until this year, we propose new models of operation mechanism for SGT type MOS transistor. Especially, It was successful in formulations making the voltage-current characteristics of SGT type MOS transistor. As a result, we made clear the factors that limit operation speed, operation power and small size for a future 3D MOS transistor. The results are very important for a future LSI.