Deposition of epitaxial Ga2O3 and (AlxGa1-x)2O3 thin films by ion beam sputtering: a systematic study

离子束溅射外延 Ga2O3 和 (AlxGa1-x)2O3 薄膜沉积：系统研究

• 批准号: 451986469
• 负责人: Dmitry Kalanov, Ph.D.
• 金额: --
• 依托单位: Abteilung Präzisionsoberflächen
• 依托单位国家: 德国
• 项目类别: Research Grants
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/451986469?language=en
• 关键词: Deposition; epitaxial; Ga2O3; AlxGa1; 2O3

Ion beam sputtering is a deposition technique, which provides unique opportunities to control the sputtering and deposition processes, and to study the correlations between them. Previous comprehensive investigations of the ion beam sputter deposition (IBSD) process were carried out for amorphous monoatomic and binary oxide films. Among others, it could be shown that the process provides an intrinsic ion-assist, which can be used to tune several thin film properties. In the present proposal, these investigations will be extended with two objectives: (i) study of complex binary and ternary film materials, and (ii) study of relations between IBSD process parameters and crystalline structure and quality of technologically relevant material. The subject of the investigation will be gallium oxide (Ga2O3) and aluminum gallium oxide ([AlxGa1−x]2O3). These materials are of high technological interest because of their interesting properties, such as a wide bandgap and a high breakdown field strength, which enable their use, for instance, in ultra-high-power electronics. To fully exploit the potential of Ga2O3 and (AlxGa1−x)2O3 thin films, high crystalline quality is needed, which can be achieved only through a better fundamental understanding and control of the deposition process. Other groups demonstrated for different monoatomic and binary materials that IBSD is capable to grow epitaxial films with high crystalline quality. However, these studies disregarded, for instance, one of the previously identified major process parameters, namely the sputtering geometry. Therefore, a comprehensive and extended systematic study is needed to reveal the full potential of IBSD with regard to the proposed objectives.The present project aims for a comprehensive, systematic study of ion beam sputter deposition of Ga2O3 and (AlxGa1−x)2O3 films by investigating the fundamental correlations between process parameters (sputtering geometry, ion species, ion energy, partial oxygen pressure, substrate temperature, substrate material), properties of secondary, sputtered and scattered particle species, and thin films. The goal is to improve our understanding of how to achieve epitaxy and high crystalline quality (larger grains, a lower density of lattice defects) of the films by utilizing the unique features of ion beam sputtering. The contributions of moderately energetic film-forming species to the growth process and its tuning are of particular interest for the selected material systems.

离子束溅射是一种沉积技术，它为控制溅射和沉积过程以及研究它们之间的相关性提供了独特的机会。之前对非晶单原子和二元氧化物薄膜的离子束溅射沉积（IBSD）工艺进行了全面的研究。除其他外，可以证明该过程提供了固有的离子辅助，可用于调整多种薄膜特性。在本提案中，这些研究将扩展为两个目标：（i）研究复杂的二元和三元薄膜材料，以及（ii）研究IBSD工艺参数与晶体结构和技术相关材料的质量之间的关系。研究对象是氧化镓（Ga2O3）和铝镓氧化物（[AlxGa1−x]2O3）。这些材料因其有趣的特性而具有很高的技术价值，例如宽带隙和高击穿场强，这使得它们能够在超高功率电子产品中使用。为了充分发挥 Ga2O3 和 (AlxGa1−x)2O3 薄膜的潜力，需要高晶体质量，这只能通过更好地了解和控制沉积过程来实现。其他小组证明，对于不同的单原子和二元材料，IBSD 能够生长具有高结晶质量的外延薄膜。然而，这些研究忽略了例如先前确定的主要工艺参数之一，即溅射几何形状。因此，需要进行全面和扩展的系统研究，以揭示 IBSD 在所提出的目标方面的全部潜力。本项目旨在通过研究工艺参数（溅射几何形状、离子种类、离子能量、氧分压、衬底温度、衬底）之间的基本相关性，对 Ga2O3 和 (AlxGa1−x)2O3 薄膜的离子束溅射沉积进行全面、系统的研究。 材料），二次、溅射和散射粒子种类以及薄膜的特性。目标是提高我们对如何利用离子束溅射的独特功能实现薄膜的外延和高结晶质量（更大的晶粒、更低的晶格缺陷密度）的理解。中等能量的成膜物质对生长过程及其调节的贡献对于所选材料系统特别重要。